Abstract: A treadmill includes a frame having a front end and a rear end, substantially opposite the front end; a front shaft assembly coupled to the frame proximate the front end of the frame; a rear shaft assembly coupled to the frame proximate the rear end of the frame; a running belt disposed about the front and rear shaft assemblies; and a bumper coupled to the frame proximate the running belt such that the bumper is disposed between the running belt and the frame. In use, the bumper is configured to selectively restrict movement of the running belt towards at least a portion of the frame.

Abstract: Compositions for directed self-assembly (DSA) patterning techniques are provided. Methods for directed self-assembly are also provided in which a DSA composition comprising a block copolymer is applied to a substrate and then self-assembled to form the desired pattern. The block copolymer includes at least two blocks of differing etch rates, so that one block (e.g., polymethylmethacrylate) is selectively removed during etching. Because the slower etching block (e.g., polystyrene) is modified with an additive to further slow the etch rate of that block, more of the slow etching block remains behind to fully transfer the pattern to underlying layers.

Abstract: The present invention provides novel methods of fabricating microelectronics structures, and the resulting structures formed thereby, using EUV lithographic processes. The method involves utilizing an assist layer immediately below the photoresist layer. The assist layer can either be directly applied to the substrate, or it can be applied to any intermediate layer(s) that may be applied to the substrate. The preferred assist layers are formed from spin-coatable, polymeric compositions. The inventive method allows reduced critical dimensions to be achieved with improved dose-to-size ratios, while improving adhesion and reducing or eliminating pattern collapse issues.

Abstract: Compositions for directed self-assembly (DSA) patterning techniques are provided. Methods for directed self-assembly are also provided in which a DSA composition comprising a block copolymer is applied to a substrate and then self-assembled to form the desired pattern. The block copolymer includes at least two blocks of differing etch rates, so that one block (e.g., polymethylmethacrylate) is selectively removed during etching. Because the slower etching block (e.g., polystyrene) is modified with an additive to further slow the etch rate of that block, more of the slow etching block remains behind to fully transfer the pattern to underlying layers.

Abstract: Novel, developer soluble anti-reflective coating compositions and methods of using those compositions are provided. The compositions comprise a polymer and/or oligomer having acid functional groups and dissolved in a solvent system along with a cross linker, a photoacid generator, and optionally a chromophore. The preferred acid functional group is a carboxylic acid, while the preferred crosslinker is a vinyl ether crosslinker. In use, the compositions are applied to a substrate and thermally crosslinked. Upon exposure to light (and optionally a post exposure bake), the cured compositions will decrosslink, rendering them soluble in typical photoresist developing solutions (e.g., alkaline developers). In one embodiment, the compositions can be used to form ion implant areas in microelectronic substrates.

Abstract: Novel, wet developable anti-reflective coating compositions and methods of using those compositions are provided. The compositions comprise a polymer and/or oligomer having acid functional groups and dissolved in a solvent system along with a crosslinker and a photoacid generator. The preferred acid functional group is a carboxylic acid, while the preferred crosslinker is a vinyl ether crosslinker. In use, the compositions are applied to a substrate and thermally crosslinked. Upon exposure to light, the cured compositions will decrosslink, rendering them soluble in typical photoresist developing solutions (e.g., alkaline developers).

Abstract: Novel, wet developable anti-reflective coating compositions and methods of using those compositions are provided. The compositions comprise a polymer and/or oligomer having acid functional groups and dissolved in a solvent system along with a crosslinker and a photoacid generator. The preferred acid functional group is a carboxylic acid, while the preferred crosslinker is a vinyl ether crosslinker. In use, the compositions are applied to a substrate and thermally crosslinked. Upon exposure to light, the cured compositions will decrosslink, rendering them soluble in typical photoresist developing solutions (e.g., alkaline developers).

Abstract: An improved method for applying organic anti-reflective coatings to substrate surfaces and the resulting precursor structures are provided. Broadly, the methods comprise chemical vapor depositing (CVD) a polymer on the substrate surface. In one embodiment, the polymer are formed of highly strained monomers (e.g., monomers having a strain energy of at least about 10 kcal/mol) which themselves comprise two cyclic moieties joined to one another via an alkyl chain. One preferred such monomer is 1,4-dixylylene. The CVD processes comprise heating the monomer so as to vaporize the monomer and then pyrolizing the monomer in the resulting vapor to form stable diradicals which are subsequently polymerized on a substrate surface in a deposition chamber. The inventive methods are useful for providing highly conformal anti-reflective coatings on large substrate surfaces having super submicron (0.25 &mgr;m or smaller) features.