Patents by Inventor Douglas Harvey NEWMAN

Douglas Harvey NEWMAN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SHALLOW TRENCH ISOLATION STRUCTURE WITH NITRIDE PULLBACK BY IMPLANTATION TREATMENT
    Publication number: 20240006230
    Abstract: A semiconductor device includes a trench extending into a semiconductor layer. A liner layer is on a sidewall of the semiconductor layer within the trench. The liner layer extends from the sidewall to a top surface of the semiconductor layer. An isolation structure is within the trench. The isolation structure is between a first region of the semiconductor layer and a second region of the semiconductor layer. The semiconductor layer includes a third region that couples the first region to the second region of the semiconductor layer. The third region of the semiconductor layer is substantially free of phosphorus contamination.
    Type: Application
    Filed: June 30, 2022
    Publication date: January 4, 2024
    Inventors: Mahalingam NANDAKUMAR, Douglas Harvey NEWMAN, Byron Joseph PALLA, Haowen BU