Abstract: Various methods of fabricating a conductor structure are provided. In one aspect, a method of fabricating a conductor structure on a first workpiece is provided. A silicon film is formed on the first workpiece. An anti-reflective coating is formed on the silicon film. A mask is formed on a first portion of the anti-reflective coating, while a second portion thereof is left unmasked. The second portion of the anti-reflective coating and the silicon film are etched. The mask is removed, and the anti-reflective coating is removed by isotropic plasma etching. Use of isotropic etching for anti-reflective coating removal eliminates thermal shock associated with heated acid bath anti-reflective coating removal.

Abstract: Various methods of fabricating a circuit structure, such as a gate electrode or a resistor are provided. In one aspect, a method of fabricating a circuit structure is provided that includes forming a silicon structure on a substrate and forming an oxide film on the silicon structure. A first portion of the oxide film is masked while a second portion is left unmasked. The second portion of the oxide film is removed by isotropic plasma etching to expose a portion of the silicon structure, and the first portion of the oxide film is unmasked. Use of isotropic etching for removal of a resistor protect oxide reduces the potential for isolation structure damage due to aggressive overetching associated with conventional anisotropic etching techniques.

Abstract: A method of making a semiconductor device with improved isolation region to active region topography includes forming a masking layer on a surface of a substrate. A portion of the masking layer is removed to define one or more field regions and at least one trench is formed in the one or more field regions. An oxide layer is formed which substantially fills the trench and then a portion of the oxide layer is removed to leave the oxide layer with a relatively planar surface that is recessed with respect to the masking layer. The masking layer is then removed to expose the substrate. There may be a height differential between the substrate surface and the relatively planer surface of the oxide layer, however, the height differential is substantially less than the thickness of the masking layer.

Abstract: A method of forming an improved isolation trench between active regions within the semiconductor substrate involves oxidizing unmasked portions of a semiconductor substrate prior to etching an isolation trench into the semiconductor substrate. By oxidizing the unmasked portions of the semiconductor prior to etching, an isolation trench with rounded corners may be formed.

Abstract: An apparatus and method for detecting the endpoint of an etch during semiconductor fabrication is provided. The endpoint detection system utilizes a mass spectrometer having an energy source located outside the vacuum chamber of the endpoint detection system, thus providing an easily replaceable energy source. The energy source may be a light source to provide photo-ionization. The energy source may be selected based upon the gas species of the etch of which an endpoint as being detected. The energy is directed into an ionization chamber of the endpoint detection system through a transparent window.