Abstract: Etch residue, resulting from a process used in forming a via, is removed using a process that does not require using a liquid chemical solvent and does not result in excessive charge build-up in the via. One step is to use a fluorocarbon and oxygen. These gases are energized by both microwave and RF. Another step is to introduce argon, in addition to the other two gases, also energized by microwave and RF. This has the effect of removing any additional residue which tends to stick on the surface above the via as well completing the removal of etch residue in the via. An additional step is simply to apply de-ionized water to remove any remaining fluorinated residue that, as a result of the preceding two steps, is highly soluable in water.

Abstract: A method for manufacturing an static random access memory (SRAM) cell (10) begins by manufacturing a fuse region (36) over a substrate (10). An etch stop layer (44) is formed overlying the fuse region (36) from resistor polysilicon material. In order for the fuse region (36) to be accessed and properly disabled, an opening (60) must be provided which stops on the etch stop layer (44). The etch stop (44) ensures a consistent and repeatable optimal thickness X of dielectric material above the fuse region (36) to provide for proper laser access and repair. The etch stop layer (44) therefore reduces wafer to wafer and die to die variation in thickness X and provides for a higher yield laser repair for each SRAM integrated circuit and every wafer processed using this methodology.

Abstract: A plasma enhanced chemical vapor deposition process for producing a fluorinated silicon nitride film on a substrate is disclosed. The process utilizes a mixture of silane, perfluorosilane and nitrogen to produce films of high conformality and stability. The silane and perfluorosilane in the mixture are in a ratio of 0.05 to 1 on a volume basis. The preferred silane is SiH.sub.4 and the preferred perfluorosilane is SiF.sub.4. Films prepared by the process are disclosed and their properties are described.

Abstract: A plasma enhanced chemical vapor deposition process for producing a fluorinated silicon nitride film on a substrate is disclosed. The process utilizes a mixture of silane, perfluorosilane and nitrogen to produce films of high conformality and stability. The silane and perfluorosilane in the mixture are in a ratio of 0.05 to 1 on a volume basis. The preferred silane is SiH.sub.4 and the preferred perfluorosilane is SiF.sub.4. Films prepared by the process are disclosed and their properties are described.

Abstract: A plasma enhanced chemical vapor deposition process for producing a fluorinated silicon nitride layer on a substrate is disclosed. The process utilizes a mixture of silane, perfluorosilane and nitrogen to produce films of high conformality and stability. The silane and perfluorosilane in the mixture are in a ratio of 0.05 to 1 on a volume basis. The preferred silane is SiH.sub.4 and the preferred perfluorosilane is SiF.sub.4.