Abstract: A tri-level inverter power module has an architecture employing a high degree of modularity that allows a base power module to be quickly, easily, and cost effectively configured to address a large variety of applications.

Abstract: A power converter utilizes a high frequency capacitor and a bulk capacitor coupled across the DC terminals to reduce high frequency effect and voltage overshoot, leading to space and cost savings in power converter design. Each capacitor may be physically coupled adjacent the gate driver board via clips, clamps, and/or fasteners.

Abstract: Power converters such as power modules configured as inverters employ modularized approaches. In some aspects, semiconductor devices are thermally coupled directly to thermally conductive substrates without intervening dielectric or insulative structures. Additionally, or alternatively, semiconductor devices are thermally coupled to thermally conductive substrates with relatively large surface areas before heat transferred from the semiconductor devices encounters a dielectric or electrically insulating structure with correspondingly high thermal impedance.

Abstract: Power converters such as power modules configured as inverters employ modularized approaches. In some aspects, semiconductor devices are thermally coupled directly to thermally conductive substrates without intervening dielectric or insulative structures. Additionally, or alternatively, semiconductor devices are thermally coupled to thermally conductive substrates with relatively large surface areas before heat transferred from the semiconductor devices encounters a dielectric or electrically insulating structure with correspondingly high thermal impedance.

Abstract: Power converters such as power modules configured as inverters employ modularized approaches. In some aspects, semiconductor devices are thermally coupled directly to thermally conductive substrates without intervening dielectric or insulative structures. Additionally, or alternatively, semiconductor devices are thermally coupled to thermally conductive substrates with relatively large surface areas before heat transferred from the semiconductor devices encounters a dielectric or electrically insulating structure with correspondingly high thermal impedance.

Abstract: A power converter comprising a DC/AC bridge circuit electrically coupled between positive and negative DC bus terminals and a set of phase terminals, a DC/DC bridge circuit electrically coupled to the positive and negative DC bus terminals and a set of DC bridge terminals. The power converter may be configured to control the transfer of power to and/or from the DC bridge terminals and to control the transfer of power to and/or from the AC phase terminals.

Abstract: Power converters such as power modules configured as inverters employ modularized approaches. In some aspects, semiconductor devices are thermally coupled directly to thermally conductive substrates without intervening dielectric or insulative structures. Additionally, or alternatively, semiconductor devices are thermally coupled to thermally conductive substrates with relatively large surface areas before heat transferred from the semiconductor devices encounters a dielectric or electrically insulating structure with correspondingly high thermal impedance.

Abstract: A dual power module architecture employing a high degree of modularity, that allows a base power module to be quickly, easily, and cost effectively configured to address a large variety of applications.

Abstract: A power module employs at least one capacitor electrically coupled across the input terminals to reduce voltage overshoot. The capacitor may be surface mounted to a high side collector plating area and a low side emitter plating area. The power module may employ a lead frame and terminals accessible from an exterior of a module housing, for making electrical couplings to externally located power sources and/or loads.

Abstract: A non-invasive, non-destructive method and system for determining power transistor peak die voltage utilizes values for each of a plurality of parameters determined by measurement of external terminal voltages for any number of switches, such as transistors of an inverter. Stray inductance values are calculated and used with measured current gradient to calculate the peak die voltages for the switches. A refinement of the method determines transistor peak die voltage without measuring current.

Abstract: A dual power module architecture employing a high degree of modularity, that allows a base power module to be quickly, easily, and cost effectively configured to address a large variety of applications.

Abstract: A power module employs at least one capacitor electrically coupled across the input terminals to reduce voltage overshoot. The capacitor may be surface mounted to a high side collector plating area and a low side emitter plating area.

Abstract: A power converter utilizes a high frequency capacitor and a bulk capacitor coupled across the DC terminals to reduce high frequency effect and voltage overshoot, leading to space and cost savings in power converter design. Each capacitor may be physically coupled adjacent the gate driver board via clips, clamps, and/or fasteners.

Abstract: A non-invasive, non-destructive method and system for determining power transistor peak die voltage utilizes values for each of a plurality of parameters determined by measurement of external terminal voltages for any number of switches, such as transistors of an inverter. Stray inductance values are calculated and used with measured current gradient to calculate the peak die voltages for the switches.