Patents by Inventor Douglas Kei Tak Tsang

Douglas Kei Tak Tsang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7129177
    Abstract: During fabrication of a write head via holes are first opened in a gap layer, followed by formation of seed layers instead of the other way around. Moreover a first seed layer is formed, and without the first seed layer being used a second seed layer is formed. The second seed layer (which is the topmost layer) is used in plating to form coils (e.g. of copper) for the write head. After coil formation, the first seed layer is used for plating to form vias (e.g. of NiFe). The two seed layers may be formed in a single operation by using two different targets in a vacuum deposition chamber. Moreover, a single insulation layer is sufficient to insulate and protect all plated elements, regardless of whether they are formed by use of the first seed layer or the second seed layer.
    Type: Grant
    Filed: October 29, 2004
    Date of Patent: October 31, 2006
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Douglas Kei Tak Tsang, Jorge D. Colonia, Yvette Chung Nga Winton, Michael Ming Hsiang Yang