Abstract: A semiconductor device including a bias voltage generator formed from a junction field effect transistor (JFET). The JFET includes a control gate terminal and a first and a second source/drain terminal. The first and second source/drain terminals can form a first terminal of a p-n junction and the control gate terminal can form a second terminal of the p-n junction. The first terminal of the p-n junction can be provided with a first potential. The second terminal can be left essentially floating to provide a bias voltage. A bias receiving circuit can receive the bias voltage. The bias receiving circuit can be in close proximity on the semiconductor device to the bias voltage generator.

Abstract: A semiconductor device including a bias voltage generator formed from a junction field effect transistor (JFET). The JFET includes a control gate terminal and a first and a second source/drain terminal. The first and second source/drain terminals can form a first terminal of a p-n junction and the control gate terminal can form a second terminal of the p-n junction. The first terminal of the p-n junction can be provided with a first potential. The second terminal can be left essentially floating to provide a bias voltage. A bias receiving circuit can receive the bias voltage. The bias receiving circuit can be in close proximity on the semiconductor device to the bias voltage generator.

Abstract: A junction field effect transistor (JFET) device is disclosed for amplifying an input signal. The JFET device includes a first gate region and a substrate/well/bulk region that may form a second gate region. The JFET device also includes a first source/drain region and a second source/drain region. The first source/drain region may receive an input signal and either the first gate region or the second gate region may provide an amplified output signal. A current supplied across the channel region may be substantially independent of a current supplied between the gate region and a bulk region of the substrate. The device may be configured to amplify a time varying input signal to provide an amplified time varying output signal.

Abstract: A device is disclosed for sensing radiation, having a gate region and a substrate, wherein one of the gate region and the substrate is configured as an input for radiation. A channel region, connecting a source region and a drain region of the transistor device is provided. The device is configured to produce an electrical signal, which is proportional to the input radiation, at a first location of the channel region.

Abstract: A JFET transistor device configured to provide an amplitude estimate of a time varying input signal, and associated methods for using such a device, are disclosed. An exemplary JFET transistor device includes a gate region and a substrate (back gate, or the like), at least one of which is at a floating potential and the other of which is at a circuit common potential; and a channel region, connecting a source region and a drain region of the transistor device for receiving a time varying input signal at a first location and for producing an output signal related to amplitude of the time varying signal at a second location.

Abstract: The present invention relates to a modular electrode system, and its use, for facilitating the introduction of a macromolecule into cells of a selected tissue in a body or plant. The modular electrode system comprises a non-symmetrically arranged plurality of needle electrodes; a hypodermic needle; an electrical connector that provides a conductive link from a programmable constant-current pulse controller to the plurality of needle electrodes; and a power source. In a preferred embodiment of the present invention, an operator can grasp the plurality of needle electrodes that are mounted on a support structure and firmly insert the them into the selected tissue in a body or plant. The macromolecules are then delivered via the hypodermic needle into the selected tissue. The programmable constant-current pulse controller is activated and constant-current electrical pulse is applied to the plurality of needle electrodes.

Abstract: A system and method for providing macro based returns services that may be customized for particular retailers, customer or items. Forward files may be used to trigger particular actions in the return process. Analytics may be gathered and used to differentiate customers utilizing the returns process in order to optimize the retailers business and evolve the relationship with the customer. Customer information and information specific to the retailer or items can also be used to drive customized marketing initiatives triggered during the returns process.

Abstract: An apparatus and method for forming a RAM data memory that generates predictable noise/interference components that are coherent with each write cycle and essentially independent of the data content of the RAM data memory. The RAM data memory is comprised of a plurality of cells, each representing a data bit, which are selectively addressable as memory bytes formed of multiple bits. Each cell is formed of two sets of cross-coupled transistors. By causing each set of cross-coupled transistors to be set to a common voltage level at the beginning of a write cycle before setting one set of transistors to a low level and the one set of transistors to be set to a high level (thus representing a desired data bit value), the associated noise/interference components of the power drain are data independent. Furthermore, the data-independent noise occurs at frequencies at or above the write cycle rate.