Abstract: A radiation unit for a fixation device for fixation of toner material on a printing stock surface for an electrophotographic printing machine, as well as a method for exposure and fixation of toner material on a printing stock surface. Exposure for fixation of toner material occurs essentially indirectly, i.e., the light emitted by the radiation unit is reflected at least once, so that high uniformity and homogeneity of the radiation, efficient energy utilization and avoidance of adverse changes on the printing stock are achieved. A high-energy density, low housing dimensions and independence of the radiation from the employed printing unit are achieved by the fact that the radiation wavelength lies essentially in the ultraviolet spectral range.

Abstract: A radiation unit for a fixation device for fixation of toner material on a printing stock surface for an electrophotographic printing machine, as well as a method for exposure and fixation of toner material on a printing stock surface. Exposure for fixation of toner material occurs essentially indirectly, i.e., the light emitted by the radiation unit is reflected at least once, so that high uniformity and homogeneity of the radiation, efficient energy utilization and avoidance of adverse changes on the printing stock are achieved. A high-energy density, low housing dimensions and independence of the radiation from the employed printing unit are achieved by the fact that the radiation wavelength lies essentially in the ultraviolet spectral range.

Abstract: A PbTe/PbEuSeTe buried quantum well diode laser and array and the method for making the same. The quantum well active region layer is buried between electrical and optical confinement regions which have an energy band gap greater than the active buried layer and an index of refraction less than the active layer. The buried structure enhances electrical and optical confinement, reduces threshold currents, and provides a stable single mode laser. The buried laser and array are produced using a two-step molecular beam epitaxy method.

Abstract: A PbTe/PbEuSeTe buried heterostructure tunable diode laser and array and the method for making the same. The active region layer is buried between two lead salt semiconductor layers containing europium and selenium that are mutually of opposite conductivity type and have substantially the same lattice constant as the active region layer. In addition, the europium and selenium containing lead chalcogenide layers have an energy band gap greater than the active buried layer and an index of refraction less than the active layer. The buried structure enhances electrical and optical confinement, reduces threshold currents, and provides a stable single mode laser. Strontium, calcium or tin may be used in place of the europium. The buried laser and array are produced using a two-step molecular beam epitaxy method.

Abstract: A PbTe/PbEuSeTe buried heterostructure tunable diode laser and array and the method for making the same. The active region layer is buried between two lead salt semiconductor layers containing europium and selenium that are mutually of opposite conductivity type and have substantially the same lattice constant as the active region layer. In addition, the europium and selenium containing lead chalcogenide layers have an energy band gap greater than the active buried layer and an index of refraction less than the active layer. The buried structure enhances electrical and optical confinement, reduces threshold currents, and provides a stable single mode laser. Strontium, calcium or tin may be used in place of the europium. The buried laser and array are produced using a two-step molecular beam epitary method.