Abstract: Described herein are synthesis schemes and methods for producing silicon based nanostructures and materials, including compositions and methods for synthesis of silicon-based nanowires and composites from three-component and four-component liquid silane/polymer inks. Materials and methods for producing silicon based micro and nanofibers that can be used in a variety of applications including material composites, electronic devices, sensors, photodetectors, batteries, ultracapacitors, and photosensitive substrates, and the like.

Abstract: Described herein are synthesis schemes and methods for producing silicon based nanostructures and materials, including compositions and methods for synthesis of silicon-based nanowires and composites from three-component and four-component liquid silane/polymer inks. Materials and methods for producing silicon based micro and nanofibers that can be used in a variety of applications including material composites, electronic devices, sensors, photodetectors, batteries, ultracapacitors, and photosensitive substrates, and the like.

Abstract: A method of preparing a cyclohexasilane compound from trichlorosilane is provided. The method includes contacting trichlorosilane with a reagent composition to produce a compound containing a tetradecahalocyclohexasilane dianion, such as a tetradecachlorocyclohexasilane dianion. The reagent composition typically includes (a) tertiary polyamine ligand; and (b) a deprotonating reagent, such as a tertiary amine having a pKa of at least about 10.5. Methods of converting the tetradecahalocyclohexasilane dianion-containing compound to cyclohexasilane or a dodecaorganocyclohexasilane are also provided.

Abstract: Heteroatom doped silane compounds, e.g., phosphorus-containing silane compounds, are provided. The application also provides methods of producing the heteroatom doped silane compounds from halogen substituted silanes via reaction with a heteroatom-containing nucleophile.

Abstract: A method of preparing a cyclohexasilane compound from trichlorosilane is provided. The method includes contacting trichlorosilane with a reagent composition to produce a compound containing a tetradecahalocyclohexasilane dianion, such as a tetradecachlorocyclohexasilane dianion. The reagent composition typically includes (a) tertiary polyamine ligand; and (b) a deprotonating reagent, such as a tertiary amine having a pKa of at least about 10.5. Methods of converting the tetradecahalocyclohexasilane dianion-containing compound to cyclohexasilane or a dodecaorganocyclohexasilane are also provided.

Abstract: Heteroatom doped silane compounds, e.g., phosphorus-containing silane compounds, are provided. The application also provides methods of producing the heteroatom doped silane compounds from halogen substituted silanes via reaction with a heteroatom-containing nucleophile.

Abstract: Thermal treatment of transition metal ferrite nanoparticles at moderate temperatures provides materials with desirable magnetic properties. AxFe3-xO4 nanoparticles, e.g., with metal ratio from x=0.4 to 1.0, can be prepared according to standard solution micelle techniques. While the materials produced by micelle synthesis, such as CoFe2O4 nanoparticles, appeared to be comprised of mainly the magnetite phase (e.g., CoFe2O4) by x-ray diffraction, multiphase materials were observed after the transition metal ferrite nanoparticles were subjected to thermal treatment under nitrogen. Magnetization as a function of applied field and temperature reveal variations in saturation magnetization, coercivity, blocking temperature and Verwey transition temperature dependence as a function of composition. Extremely high saturation magnetization with low coercivity can be achieved with such compositions.

Abstract: Disclosed are conductive ink compositions that include at least one monomer containing exactly one ethylenically unsaturated group, one or more thermoplastic polymers, one or more free radical initiators, and conductive particles. Also disclosed are conductive thermoplastic materials which include at least one thermoplastic polymer produced by polymerization of one or more monomers containing exactly one ethylenically unsaturated group; and conductive particles dispersed in said thermoplastic polymer. The conductive ink compositions and thermoplastic materials can be used in the manufacture of electronic devices, such as radiofrequency identification (“RFID”) devices.

Abstract: A process for forming an electrical conductor on a substrate is provided, consisting essentially of providing an ink comprised of a metallic chelate, printing directly thereon the ink, and decomposing the ink wherein the metal-chelate is converted to a solid metal conductor on the substrate.

Abstract: The present invention provides a process for etching a corrosion layer, such as oxide or hydroxide, from and concomitantly forming a passivating layer on the surface of metallic nanoparticles. A reaction mixture is prepared by dispersing sodium hexafluoroacetylacetonate (Na(hfa)) and a metallic particle powder having oxide or hydroxide corrosion layers in hexane solvent. The mixture is allowed to react for a time sufficient to etch the oxide or hydroxide groups from the particulate surface and passivate the surfaces with (hfa). Hexane may be evaporated from the mixture and any excess Na(hfa) separated from the reaction mixture by sublimation or rinsing with a polar aprotic solvent. In an embodiment of the present invention, aluminum particles are first etched and passivated and then used to form ohmic contacts with p-type silicon. This etching/passivation improves the electrical properties of the contact.

Abstract: A colloidal suspension comprising metal chalcogenide nanoparticles and a volatile capping agent. The colloidal suspension is made by reacting a metal salt with a chalcogenide salt in an organic solvent to precipitate a metal chalcogenide, recovering the metal chalcogenide, and admixing the metal chalcogenide with a volatile capping agent. The colloidal suspension is spray deposited onto a substrate to produce a semiconductor precursor film which is substantially free of impurities.

Abstract: A process for the preparation of a semiconductor film. The process comprises depositing nanoparticles of a semiconductor material onto a substrate whose surface temperature during nanoparticle deposition thereon is sufficient to cause substantially simultaneous fusion of the nanoparticles to thereby coalesce with each other and effectuate film growth.