Abstract: Prepackaged chips, such a memory chips, are vertically stacked and bonded together with their terminals aligned. The exterior lead frames are removed including that portion which extends into the packaging. The bonding wires are now exposed on the collective lateral surface of the stack. In those areas where no bonding wire was connected to the lead frame, a bare insulative surface is left. A contact layer is disposed on top of the stack and vertical metalizations defined on the stack to connect the ends of the wires to the contact layer and hence to contact pads on the top surface of the contact layer. The vertical metalizations are arranged and configured to connect all commonly shared terminals of the chips, while the control and data input/output signals of each chip are separately connected to metalizations, which are disposed in part on the bare insulative surface.

Abstract: Prepackaged chips, such a memory chips, are vertically stacked and bonded together with their terminals aligned. The exterior lead frames are removed including that portion which extends into the packaging. The bonding wires are now exposed on the collective lateral surface of the stack. In those areas where no bonding wire was connected to the lead frame, a bare insulative surface is left. A contact layer is disposed on top of the stack and vertical metalizations defined on the stack to connect the ends of the wires to the contact layer and hence to contact pads on the top surface of the contact layer. The vertical metalizations are arranged and configured to connect all commonly shared terminals of the chips, while the control and data input/output signals of each chip are separately connected to metalizations, which are disposed in part on the bare insulative surface.

Abstract: Prepackaged chips, such a memory chips, are vertically stacked and bonded together with their terminals aligned. The exterior lead frames are removed including that portion which extends into the packaging. The bonding wires are now exposed on the collective lateral surface of the stack. In those areas where no bonding wire was connected to the lead frame, a bare insulative surface is left. A contact layer is disposed on top of the stack and vertical metallizations defined on the stack to connect the ends of the wires to the contact layer and hence to contact pads on the top surface of the contact layer. The vertical metallizations are arranged and configured to connect all commonly shared terminals of the chips, while the control and data input/output signals of each chip are separately connected to metallizations, which are disposed in part on the bare insulative surface.

Abstract: A stackable layer and stacked multilayer module are disclosed. Individual integrated circuit die are tested and processed at the wafer level to create vertical area interconnect vias for the routing of electrical signals from the active surface of the die to the inactive surface. Vias are formed at predefined locations on each die on the wafer. The wafer is passivated and the vias are filled with a conductive material. The bond pads on the die are exposed and a metalization reroute from the user-selected bond pads and vias is applied. The inactive surface of the wafer may be back thinned if desired. The wafer is then segmented to form thin, stackable layers that can be stacked and vertically electrically interconnected using the conductive vias, forming high-density electronic modules which may, in turn, be further stacked and interconnected to form larger more complex stacks.

Abstract: A stackable microcircuit layer formed from a plastic encapsulated microcircuit (PEM) and method of making the same is disclosed. The method involves the steps of starting with a commercially available PEM (e.g. a plastic Thin Small Outline Package or TSOP) that contains a microcircuit or die within an encapsulant and modifying the PEM to expose conductive members that are electrically connected to the microcircuit's bond pads. In the case of a TSOP, the preferred modifying step is accomplished by top grinding the TSOP in order to remove the lead frame that was secured above the die and encapsulated along with it in the TSOP. Next, reroute metallization is applied in order to connect the conductive members that were exposed by the top grinding, to an edge of the modified PEM. Finally, if appropriate, the modified PEM is thinned through backside grinding and diced to a desired area, in order to provide a stackable microcircuit layer that may form a part of a dense electronic package.

Abstract: Prepackaged chips, such a memory chips, are vertically stacked and bonded together with their terminals aligned. The exterior lead frames are removed including that portion which extends into the packaging. The bonding wires are now exposed on the collective lateral surface of the stack. In those areas where no bonding wire was connected to the lead frame, a bare insulative surface is left. A contact layer is disposed on top of the stack and vertical metallizations defined on the stack to connect the ends of the wires to the contact layer and hence to contact pads on the top surface of the contact layer. The vertical metallizations are arranged and configured to connect all commonly shared terminals of the chips, while the control and data input/output signals of each chip are separately connected to metallizations, which are disposed in part on the bare insulative surface.

Abstract: A stackable microcircuit layer formed from a plastic encapsulated microcircuit (PEM) and method of making the same is disclosed. The method involves the steps of starting with a commercially available PEM (e.g. a plastic Thin Small Outline Package or TSOP) that contains a microcircuit or die within an encapsulant and modifying the PEM to expose conductive members that are electrically connected to the microcircuit's bond pads. In the case of a TSOP, the preferred modifying step is accomplished by top grinding the TSOP in order to remove the lead frame that was secured above the die and encapsulated along with it in the TSOP. Next, reroute metallization is applied in order to connect the conductive members that were exposed by the top grinding, to an edge of the modified PEM. Finally, if appropriate, the modified PEM is thinned through backside grinding and diced to a desired area, in order to provide a stackable microcircuit layer that may form a part of a dense electronic package.

Abstract: A stackable microcircuit layer formed from a plastic encapsulated microcircuit (PEM) and method of making the same is disclosed. The method involves the steps of starting with a commercially available PEM (e.g. a plastic Thin Small Outline Package or TSOP) that contains a microcircuit or die within an encapsulant and modifying the PEM to expose conductive members that are electrically connected to the microcircuit's bond pads. In the case of a TSOP, the preferred modifying step is accomplished by top grinding the TSOP in order to remove the lead frame that was secured above the die and encapsulated along with it in the TSOP. Next, reroute metallization is applied in order to connect the conductive members that were exposed by the top grinding, to an edge of the modified PEM. Finally, if appropriate, the modified PEM is thinned through backside grinding and diced to a desired area, in order to provide a stackable microcircuit layer that may form a part of a dense electronic package.