Patents by Inventor Douglas M. Dewanz
Douglas M. Dewanz has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9369308Abstract: A signaling bus having a plurality of adjacent logical lanes, each logical lane having an odd signal path and an even signal path. Driving circuitry drives each logical lane by transmitting, if data has changed from an immediately preceding cycle, a one cycle signal having a first transition direction on the even signal path on even cycles and transmitting a one cycle signal having the first transition direction on odd cycles. If data has not changed, transmitting a two cycle signal having a second transition direction on the even signal path on even cycles and transmitting a two cycle signal on the odd path having the second transition direction on odd cycles. Receiver circuitry alternates selection of the even cycle path and the odd cycle path to determine if data has changed from the immediately preceding cycle.Type: GrantFiled: November 7, 2013Date of Patent: June 14, 2016Assignee: International Business Machines CorporationInventors: David H. Allen, Douglas M. Dewanz, David P. Paulsen, John E. Sheets, II
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Patent number: 9252100Abstract: A semiconductor device and method of manufacture are provided. The semiconductor device may include a multiple-patterned layer which may include multiple channels defined by multiple masks. A width of a first channel may be smaller than a width of a second channel. A conductor in the first channel may have a conductor width substantially equivalent to a conductor width of a conductor in the second channel. A spacer dielectric on a channel side may be included. The method of manufacture includes establishing a signal conductor layer including channels defined masks where a first channel may have a first width smaller than a second width of a second channel, introducing a spacer dielectric on a channel side, introducing a first conductor in the first channel having a first conductor width, and introducing a second conductor in the second channel having a second conductor width substantially equivalent to the first conductor width.Type: GrantFiled: March 15, 2013Date of Patent: February 2, 2016Assignee: International Business Machines CorporationInventors: David H. Allen, Douglas M Dewanz, David P. Paulsen, John E. Sheets, II, Kelly L. Williams
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Patent number: 9111935Abstract: A semiconductor device and method of manufacture are provided. The semiconductor device may include a multiple-patterned layer which may include multiple channels defined by multiple masks. A width of a first channel may be smaller than a width of a second channel. A conductor in the first channel may have a conductor width substantially equivalent to a conductor width of a conductor in the second channel. A spacer dielectric on a channel side may be included. The method of manufacture includes establishing a signal conductor layer including channels defined masks where a first channel may have a first width smaller than a second width of a second channel, introducing a spacer dielectric on a channel side, introducing a first conductor in the first channel having a first conductor width, and introducing a second conductor in the second channel having a second conductor width substantially equivalent to the first conductor width.Type: GrantFiled: March 12, 2013Date of Patent: August 18, 2015Assignee: International Business Machines CorporationInventors: David H. Allen, Douglas M Dewanz, David P. Paulsen, John E. Sheets, II, Kelly L. Williams
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Patent number: 9105639Abstract: A semiconductor device and a method of manufacture are provided. The semiconductor device includes one or more layers having channels adapted to carry signals or deliver power. The semiconductor device may include a signal channel and a power channel. The power channel may include power channel cross-sectional portions. A first conductor in the power channel may have a first cross-sectional area. A second conductor in the signal channel may have a second cross-sectional area. The second cross-sectional area may be smaller than the first cross-sectional area. The method of manufacture includes establishing a signal conductor layer including a signal channel and a power channel, introducing a first conductor in the power channel having a first cross-sectional area, and introducing a second conductor in the signal channel having a second cross-sectional area where the second cross-sectional area is smaller than the first cross-sectional area.Type: GrantFiled: March 15, 2013Date of Patent: August 11, 2015Assignee: International Business Machines CorporationInventors: David H. Allen, Douglas M. Dewanz, David P. Paulsen, John E. Sheets, II, Kelly L. Williams
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Patent number: 9099533Abstract: A multiple-patterned semiconductor device and a method of manufacture are provided. The semiconductor device includes a conductive layer. The conductive layer includes conductive tracks which may be defined by photomasks. The conductive tracks may have quality characteristics. Distinct quality characteristics of distinct conductive tracks may be compared. Based on the comparison, signals and supply voltage may be routed on particular conductive tracks.Type: GrantFiled: July 2, 2013Date of Patent: August 4, 2015Assignee: International Business Machines CorporationInventors: David H. Allen, Douglas M. Dewanz, David P. Paulsen, John E. Sheets, II
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Patent number: 9099471Abstract: A semiconductor device and a method of manufacture are provided. The semiconductor device includes one or more layers having channels adapted to carry signals or deliver power. The semiconductor device may include a signal channel and a power channel. The power channel may include power channel cross-sectional portions. A first conductor in the power channel may have a first cross-sectional area. A second conductor in the signal channel may have a second cross-sectional area. The second cross-sectional area may be smaller than the first cross-sectional area. The method of manufacture includes establishing a signal conductor layer including a signal channel and a power channel, introducing a first conductor in the power channel having a first cross-sectional area, and introducing a second conductor in the signal channel having a second cross-sectional area where the second cross-sectional area is smaller than the first cross-sectional area.Type: GrantFiled: March 12, 2013Date of Patent: August 4, 2015Assignee: International Business Machines CorporationInventors: David H. Allen, Douglas M Dewanz, David P. Paulsen, John E. Sheets, II, Kelly L. Williams
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Patent number: 9099462Abstract: A multiple-patterned semiconductor device and a method of manufacture are provided. The semiconductor device includes one or more layers with signal tracks. The signal tracks have a quality characteristic. The semiconductor device also includes repeater banks to repower signals. The method of manufacture includes defining portions of layers with photomasks having signal track patterns, determining a quality characteristic of the signal track patterns, and selecting a photomask for etching vias.Type: GrantFiled: March 7, 2013Date of Patent: August 4, 2015Assignee: International Business Machines CorporationInventors: David H. Allen, Douglas M. Dewanz, David P. Paulsen, John E. Sheets, II
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Patent number: 9093451Abstract: A multiple-patterned semiconductor device and a method of manufacture are provided. The semiconductor device includes one or more layers with signal tracks. The signal tracks have a quality characteristic. The semiconductor device also includes repeater banks to repower signals. The method of manufacture includes defining portions of layers with photomasks having signal track patterns, determining a quality characteristic of the signal track patterns, and selecting a photomask for etching vias.Type: GrantFiled: March 7, 2013Date of Patent: July 28, 2015Assignee: International Business Machines CorporationInventors: David H. Allen, Douglas M. Dewanz, David P. Paulsen, John E. Sheets, II
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Patent number: 9087879Abstract: A multiple-patterned semiconductor device and a method of manufacture are provided. The semiconductor device includes a conductive layer. The conductive layer includes conductive tracks which may be defined by photomasks. The conductive tracks may have quality characteristics. Distinct quality characteristics of distinct conductive tracks may be compared. Based on the comparison, signals and supply voltage may be routed on particular conductive tracks.Type: GrantFiled: May 2, 2014Date of Patent: July 21, 2015Assignee: International Business Machines CorporationInventors: David H. Allen, Douglas M. Dewanz, David P. Paulsen, John E. Sheets, II
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Patent number: 9082624Abstract: A multiple-patterned semiconductor device is provided. The semiconductor device includes one or more layers with signal tracks defined by masks and a structure for transferring a signal between signal tracks and repowering the signal.Type: GrantFiled: January 2, 2013Date of Patent: July 14, 2015Assignee: International Business Machines CorporationInventors: David H. Allen, Douglas M. Dewanz, David P. Paulsen, John E. Sheets, II
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Patent number: 9076848Abstract: A semiconductor device and a method of manufacture are provided. The semiconductor device includes one or more layers having channels adapted to carry signals or deliver power. The semiconductor device may include at least two channels having a substantially equivalent cross-sectional area. Conductors in separate channels may have different cross-sectional areas. A spacer dielectric on a side of a channel may be included. The method of manufacture includes establishing a signal conductor layer including a first channel and a second channel having a substantially equivalent cross-sectional area, introducing a spacer dielectric on a side of the second channel, introducing a first conductor in the first channel having a first cross-sectional area, and introducing a second conductor in the second channel having a second cross-sectional area where the second cross-sectional area is smaller than the first cross-sectional area.Type: GrantFiled: March 12, 2013Date of Patent: July 7, 2015Assignee: International Business Machines CorporationInventors: David H. Allen, Douglas M Dewanz, David P. Paulsen, John E. Sheets, II, Kelly L. Williams
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Patent number: 9070751Abstract: A semiconductor device and a method of manufacture are provided. The semiconductor device includes one or more layers having channels adapted to carry signals or deliver power. The semiconductor device may include at least two channels having a substantially equivalent cross-sectional area. Conductors in separate channels may have different cross-sectional areas. A spacer dielectric on a side of a channel may be included. The method of manufacture includes establishing a signal conductor layer including a first channel and a second channel having a substantially equivalent cross-sectional area, introducing a spacer dielectric on a side of the second channel, introducing a first conductor in the first channel having a first cross-sectional area, and introducing a second conductor in the second channel having a second cross-sectional area where the second cross-sectional area is smaller than the first cross-sectional area.Type: GrantFiled: March 15, 2013Date of Patent: June 30, 2015Assignee: International Business Machines CorporationInventors: David H. Allen, Douglas M Dewanz, David P. Paulsen, John E. Sheets, II, Kelly L. Williams
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Publication number: 20150127879Abstract: A signaling bus having a plurality of adjacent logical lanes, each logical lane having an odd signal path and an even signal path. Driving circuitry drives each logical lane by transmitting, if data has changed from an immediately preceding cycle, a one cycle signal having a first transition direction on the even signal path on even cycles and transmitting a one cycle signal having the first transition direction on odd cycles. If data has not changed, transmitting a two cycle signal having a second transition direction on the even signal path on even cycles and transmitting a two cycle signal on the odd path having the second transition direction on odd cycles. Receiver circuitry alternates selection of the even cycle path and the odd cycle path to determine if data has changed from the immediately preceding cycle.Type: ApplicationFiled: November 7, 2013Publication date: May 7, 2015Inventors: David H. Allen, Douglas M. Dewanz, David P. Paulsen, John E. Sheets, II
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Patent number: 9021407Abstract: A multiple-patterned semiconductor device is provided. The semiconductor device includes one or more layers with signal tracks defined by masks and a structure for transferring a signal between signal tracks and repowering the signal.Type: GrantFiled: March 7, 2013Date of Patent: April 28, 2015Assignee: International Business Machines CorporationInventors: David H. Allen, Douglas M. Dewanz, David P. Paulsen, John E. Sheets, II
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Publication number: 20150008585Abstract: A multiple-patterned semiconductor device and a method of manufacture are provided. The semiconductor device includes a conductive layer. The conductive layer includes conductive tracks which may be defined by photomasks. The conductive tracks may have quality characteristics. Distinct quality characteristics of distinct conductive tracks may be compared. Based on the comparison, signals and supply voltage may be routed on particular conductive tracks.Type: ApplicationFiled: July 2, 2013Publication date: January 8, 2015Inventors: David H. Allen, Douglas M. Dewanz, David P. Paulsen, John E. Sheets, II
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Publication number: 20150011023Abstract: A multiple-patterned semiconductor device and a method of manufacture are provided. The semiconductor device includes a conductive layer. The conductive layer includes conductive tracks which may be defined by photomasks. The conductive tracks may have quality characteristics. Distinct quality characteristics of distinct conductive tracks may be compared. Based on the comparison, signals and supply voltage may be routed on particular conductive tracks.Type: ApplicationFiled: May 2, 2014Publication date: January 8, 2015Applicant: International Business Machines CorporationInventors: David H. Allen, Douglas M. Dewanz, David P. Paulsen, John E. Sheets, II
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Patent number: 8866306Abstract: A multiple-patterned semiconductor device and a method of manufacture are provided. The semiconductor device includes one or more layers with signal tracks. The signal tracks have a quality characteristic. The semiconductor device also includes repeater banks to repower signals. The method of manufacture includes defining portions of layers with photomasks having signal track patterns, determining a quality characteristic of the signal track patterns, and selecting a photomask for etching vias.Type: GrantFiled: January 2, 2013Date of Patent: October 21, 2014Assignee: International Business Machines CorporationInventors: David H. Allen, Douglas M. Dewanz, David P. Paulsen, John E. Sheets
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Publication number: 20140273440Abstract: A semiconductor device and a method of manufacture are provided. The semiconductor device includes one or more layers having channels adapted to carry signals or deliver power. The semiconductor device may include a signal channel and a power channel. The power channel may include power channel cross-sectional portions. A first conductor in the power channel may have a first cross-sectional area. A second conductor in the signal channel may have a second cross-sectional area. The second cross-sectional area may be smaller than the first cross-sectional area. The method of manufacture includes establishing a signal conductor layer including a signal channel and a power channel, introducing a first conductor in the power channel having a first cross-sectional area, and introducing a second conductor in the signal channel having a second cross-sectional area where the second cross-sectional area is smaller than the first cross-sectional area.Type: ApplicationFiled: March 15, 2013Publication date: September 18, 2014Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: David H. Allen, Douglas M. Dewanz, David P. Paulsen, John E. Sheets, II, Kelly L. Williams
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Publication number: 20140264942Abstract: A semiconductor device and a method of manufacture are provided. The semiconductor device includes one or more layers having channels adapted to carry signals or deliver power. The semiconductor device may include a signal channel and a power channel. The power channel may include power channel cross-sectional portions. A first conductor in the power channel may have a first cross-sectional area. A second conductor in the signal channel may have a second cross-sectional area. The second cross-sectional area may be smaller than the first cross-sectional area. The method of manufacture includes establishing a signal conductor layer including a signal channel and a power channel, introducing a first conductor in the power channel having a first cross-sectional area, and introducing a second conductor in the signal channel having a second cross-sectional area where the second cross-sectional area is smaller than the first cross-sectional area.Type: ApplicationFiled: March 12, 2013Publication date: September 18, 2014Applicant: International Business Machines CorporationInventors: David H. Allen, Douglas M. Dewanz, David P. Paulsen, John E. Sheets, II, Kelly L. Williams
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Publication number: 20140264943Abstract: A semiconductor device and method of manufacture are provided. The semiconductor device may include a multiple-patterned layer which may include multiple channels defined by multiple masks. A width of a first channel may be smaller than a width of a second channel. A conductor in the first channel may have a conductor width substantially equivalent to a conductor width of a conductor in the second channel. A spacer dielectric on a channel side may be included. The method of manufacture includes establishing a signal conductor layer including channels defined masks where a first channel may have a first width smaller than a second width of a second channel, introducing a spacer dielectric on a channel side, introducing a first conductor in the first channel having a first conductor width, and introducing a second conductor in the second channel having a second conductor width substantially equivalent to the first conductor width.Type: ApplicationFiled: March 12, 2013Publication date: September 18, 2014Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: David H. Allen, Douglas M Dewanz, David P. Paulsen, John E. Sheets, II, Kelly L. Williams