Abstract: A method for obtaining lineage committed human cells imbued with enhanced proliferative potential, biological function, or both, comprising culturing lineage committed human cells under physiologically acceptable liquid culture conditions, where the liquid culture medium is replaced at a rate and for a time sufficient to obtain the human lineage committed cells imbued with enhanced proliferative potential, biological function, or both; and isolating the cultured cells.

Abstract: A process for forming a uniform nanoporous dielectric film on a substrate. The process includes horizontally positioning a flat substrate within a cup; depositing a liquid alkoxysilane composition onto the substrate surface; covering the cup such that the substrate is enclosed therein; spinning the covered cup and spreading the alkoxysilane composition evenly on the substrate surface; exposing the alkoxysilane composition to water vapor and base vapor to thereby form a gel; and then curing the gel. The invention also provides an apparatus for spin depositing a liquid coating onto a substrate. The apparatus has a cylindrical cup with an open top section and removable cover which closes the top. A vapor injection port extends through the center of the cover. Suitable means hold a substrate centered within the cup and spin the cup.

Abstract: The present invention provides a method of treating silica, wherein dry silica is contacted with a reaction medium consisting essentially of concentrated aqueous acid and a hydrophobing agent selected from the group consisting of organosiloxanes and organochlorosilanes. The silica is then reacted with the hydrophobing agent in the reaction medium for about 90 minutes or less at a temperature from about 10° C. to about 40° C. to provide a hydrophobic treated silica. The hydrophobic treated silica then is recovered.

Abstract: A process for forming a uniform nanoporous dielectric film on a substrate. The process includes horizontally positioning a flat substrate within a cup; depositing a liquid alkoxysilane composition onto the substrate surface; covering the cup such that the substrate is enclosed therein; spinning the covered cup and spreading the alkoxysilane composition evenly on the substrate surface; exposing the alkoxysilane composition to water vapor and base vapor to thereby form a gel; and then curing the gel. The invention also provides an apparatus for spin depositing a liquid coating onto a substrate. The apparatus has a cylindrical cup with an open top section and removable cover which closes the top. A vapor injection port extends through the center of the cover. Suitable means hold a substrate centered within the cup and spin the cup.

Abstract: A process for forming a uniform nanoporous dielectric film on a substrate. The process includes horizontally positioning a flat substrate within a cup; depositing a liquid alkoxysilane composition onto the substrate surface; covering the cup such that the substrate is enclosed therein; spinning the covered cup and spreading the alkoxysilane composition evenly on the substrate surface; exposing the alkoxysilane composition to water vapor and base vapor to thereby form a gel; and then curing the gel. The invention also provides an apparatus for spin depositing a liquid coating onto a substrate. The apparatus has a cylindrical cup with an open top section and removable cover which closes the top. A vapor injection port extends through the center of the cover. Suitable means hold a substrate centered within the cup and spin the cup.

Abstract: This pertains generally to precursors and deposition methods suited to aerogel thin film fabrication of nanoporous dielectrics. An aerogel precursor sol is disclosed. This aerogel precursor sol contains a metal alkoxide (such as TEOS) and a solvent, but no gelation catalyst. By a method according to the present invention, such a precursor sol is applied as a nongelling thin film 14 to a semiconductor substrate 10. This substrate may contain patterned conductors 12, gaps 13, or other structures. An independent gelation catalyst (preferably, vapor phase ammonia) is added to promote rapid gelation of the thin film sol 14 at the desired time. One advantage is that it allows substantially independent control of gelation and pore fluid evaporation. This independent catalyst introduction allows additional processing steps to be performed between sol deposition and the onset of substantial gelation. One potential step is to evaporate a portion of the pore fluid solvent.

Abstract: This invention has enabled a new, simple nanoporous dielectric fabrication method. In general, this invention uses a polyol, such as glycerol, as a solvent. This new method allows both bulk and thin film aerogels to be made without supercritical drying, freeze drying, or a surface modification step before drying. Prior art aerogels have required at least one of these steps to prevent substantial pore collapse during drying. Thus, this invention allows production of nanoporous dielectrics at room temperature and atmospheric pressure, without a separate surface modification step. Although not required to prevent substantial densification, this new method does not exclude the use of supercritical drying or surface modification steps prior to drying. In general, this new method is compatible with most prior art aerogel techniques. Although this new method allows fabrication of aerogels without substantial pore collapse during drying, there may be some permanent shrinkage during aging and/or drying.

Abstract: Disclosed are processes for producing gel composition which may be utilized to produce low density gel compositions without the need for supercritical drying, thermal treatment or surface treatment. The processes comprise drying a wet gel comprising gel solids and a drying agent to remove the drying agent while minimizing shrinkage of the gel during drying.

Abstract: A process for treating silica dielectric film on a substrate, which includes reacting a suitable hydrophilic silica film with an effective amount of a multifunctional surface modification agent. The film is present on a substrate and optionally has a pore structure with hydrophilic pore surfaces, and the reaction is conducted for a period of time sufficient for said surface modification agent to penetrate said pore structure and produce a treated silica film having a dielectric constant of about 3 or less, wherein the surface modification agent is hydrophobic and suitable for silylating or capping silanol moieties on such hydrophilic surfaces. Dielectric films and integrated circuits including such films are also disclosed.

Abstract: The present invention provides a method of preparing lipophilic silica in an aqueous medium in the absence of added acids, bases, or organic solvents. In particular, the present inventive method of preparing lipophilic silica comprises (a) providing a mixture consisting essentially of (i) at least one organically modified silica precursor which is a trifunctional silane, (ii) water, and (iii) at least one tetrafunctional silane, (b) allowing the organically modified silica to form in the mixture, and (c) removing the organically modified silica from the mixture.

Abstract: This invention has enabled a new, simple nanoporous dielectric fabrication method. In general, this invention uses a polyol, such as glycerol, as a solvent. This new method allows both bulk and thin film aerogels to be made without supercritical drying, freeze drying, or a surface modification step before drying. Prior art aerogels have required at least one of these steps to prevent substantial pore collapse during drying. Thus, this invention allows production of nanoporous dielectrics at room temperature and atmospheric pressure, without a separate surface modification step. Although not required to prevent substantial densification, this new method does not exclude the use of supercritical drying or surface modification steps prior to drying. In general, this new method is compatible with most prior art aerogel techniques. Although this new method allows fabrication of aerogels without substantial pore collapse during drying, there may be some permanent shrinkage during aging and/or drying.

Abstract: Processes for producing gel compositions comprising: esterifying a portion of the surface of a gel composition sufficient to produce a gel composition having a rod density of less than or equal to 0.15 g/cc, and/or a tap density of less than or equal to 0.2 g/cc through contact with at least one esterification agent and at least one catalyst. The processes may be utilized to produce low density gel compositions without the need for a supercritical drying step or thermal treatment.

Abstract: The present invention provides a method of treating silica wherein silica is reacted with a di- or tri-functional organosilane in an aqueous acid medium to provide a crude organosilane-capped silica product containing organosilicon impurities. The organosilicon impurities are extracted from the crude product with an organic liquid to provide a purified product consisting essentially of organosilane-capped silica. The purified product is dried to provide a dry organosilane-capped silica. The aqueous acid medium can include a displacing reagent which displaces at least one reactive functional group of the di- or tri-functional organosilane. The present invention further provides-continuous methods of treating silica with di- and tri-functional organosilanes, wherein the organic liquid and/or the organosilicon impurities are recycled and reused.

Abstract: An apparatus and method for forming thin film aerogels on semiconductor substrates is disclosed. It has been found that in order to produce defect-free nanoporous dielectrics with a controllable high porosity, it is preferable to substantially limit evaporation and condensation of pore fluid in the wet gel thin film, e.g. during gelation, during aging, and at other points prior to obtaining a dried gel. The present invention simplifies the atmospheric control needed to prevent evaporation and condensation by restricting the atmosphere in contact with the wet gel thin film to an extremely small volume. In one embodiment, a substrate 26 is held between a substrate holder 36 and a parallel plate 22, such that a substantially sealed chamber 32 exists between substrate surface 28 and chamber surface 30. Preferably, the average clearance between surfaces 28 and 30 is less than 5 mm, or more preferably, less than 1 mm. Temperature control means 34 may optionally be used to control the temperature in chamber 32.

Abstract: This invention provides an improved porous structure for semiconductor devices and a process for making the same. This process may be applied to an existing porous structure 28, which may be deposited, for example, between patterned conductors 24. The method may comprise providing a substrate comprising a microelectronic circuit and a porous silica layer, the porous silica layer having an average pore diameter between 2 and 80 nm; and heating the substrate to one or more temperatures between 100 and 490 degrees C. in a substantially halogen-free atmosphere, whereby one or more dielectric properties of the porous dielectric are improved. In some embodiments, the atmosphere comprises a phenyl-containing atmosphere, such as hexaphenyldisilazane.

Abstract: A method of preparing a vacuum insulation panel is disclosed. In the method of the present invention, a plurality of metal oxide-containing compacts, each of which contains less water than the amount of water contained therein at atmospheric equilibrium, are enclosed in a film that retards the passage of moisture therethrough. The film is breached and the metal oxide-containing compacts are positioned in an air-impermeable container at atmospheric pressure. The pressure is reduced in the air-impermeable container, and the air-impermeable container is sealed to form the vacuum insulation panel. Also disclosed is a vacuum insulation panel comprising a plurality of metal oxide-containing compacts disposed in an air-impermeable container, wherein the metal oxide-containing compacts contain less water than the amount of water contained therein at atmospheric equilibrium.

Abstract: The present invention relates to a process for the sub-critical drying of a lyogel to form an aerogel, in which the lyogel is treated with a heat-conveying fluid at a temperature above the boiling point of the pore liquid of the lyogel under system pressure and the dried aerogel is then separated from the heat-conveying fluid.

Abstract: This invention pertains generally to precursors and deposition methods suited to aerogel thin film fabrication. An aerogel precursor sol which contains an oligomerized metal alkoxide (such as TEOS), a high vapor pressure solvent (such as ethanol) and a low vapor pressure solvent (such as water and 1-butanol) is disclosed. By a method according to the present invention, such a precursor sol is applied as a thin film to a semiconductor wafer, and the high vapor pressure solvent is allowed to evaporate while evaporation of the low vapor pressure solvent is limited, preferably by controlling the atmosphere adjacent to the wafer. The reduced sol is then allowed to gel at a concentration determined by the ratio of metal.alkoxide to low vapor pressure solvent. One advantage of the present invention is that it provides a stable, spinnable sol for setting film thickness and providing good planarity and gap fill for patterned wafers.

Abstract: The invention relates to nanoporous dielectric films and to a process for their manufacture. Such films are useful in the production of integrated circuits. Such films are produced from a precursor of an alkoxysilane; a relatively low volatility solvent composition comprising a e C.sub.1 to C.sub.4 alkylether of a C.sub.1 to C.sub.4 alkylene glycol which is miscible in water and alkoxysilanes, having a hydroxyl concentration of 0.0084 mole/cm.sup.3 or less, a boiling point of about 175.degree. C. or more at atmospheric pressure and a weight average molecular weight of about 120 or more; a relatively high volatility solvent composition having a boiling point below that of the relatively low volatility solvent composition; optional water and an optional catalytic amount of an acid.

Abstract: New gel conpositions which comprise a carbonaceous component attached to a gel component. Preferably, the corbonaceous component is selected from the group consisting of: carbon blacks, carbon fibers, activated carbons and graphitic carbons; and the gel component is selected from the group consisting of: metal oxide gels and polymeric gels. Also disclosed are new gel composition comprising: a gel component and a carbon black product having attached at least one organic group, the organic group comprising: a) at least one aromatic group, and b) at least one ionic group, at least one ionizable group, or a mixture of an ionic group and an ionizable group, wherein at least one aromatic group of the organic group is directly attached to the carbon black. Further disclosed are new gel compositon comprising: a gel component and a carbon black product having attached at least one organic group, the organic group comprising: a) at least one C.sub.1 -C.sub.