Abstract: Encoding bits includes receiving a bit set to encode. An encoding lookup table associates correlithm objects of a space with bit sets. The space refers to an N-dimensional space, a correlithm object refers to a point of the space. The correlithm object corresponding to the received bit set is identified. The received bit set is encoded as the identified correlithm object. The identified correlithm object is imposed to encode the received bit set and subsequently decoded with table lookup using the reverse process.

Abstract: Manipulating correlithm objects includes establishing correlithm objects of an N-dimensional space, where a correlithm object is a point of the space. The correlithm objects are imposed on the space to yield a combined point. An imposed correlithm object is compared to the combined point. The imposed correlithm object is recovered in accordance with the comparison.

Abstract: Random logic circuitry (210) is laid out in a logic array (212) that has a plurality of row and column locations. The logic circuitry (210) implements a plurality of dynamic logic circuits, each logic circuit having a plurality of logic gate field effect transistors (224) each formed at a selected intersection of one of the row locations and a predetermined plurality of the column locations. Elongate gate conductors (584-602) are formed at selected row locations in the logic array (212), each gate conductor provided as a gate for one or more of the logic gate transistors (224). Selected ones (e.g. 514, 544) of the transistors are merged in a row direction if the logic does not require them to be isolated from one another. A plurality of elongate second conductors (222) interconnect to selected ones of the sources or drains of the transistors (224). Non-Boolean portions of the logic circuitry are formed in an adjacent tile section (214) in the semiconductor layer separate from the logic array (212).

Abstract: Random logic circuitry (210) is laid out in a logic array (212) that has a plurality of row and column locations. The logic circuitry (210) implements a plurality of dynamic logic circuits, each logic circuit having a plurality of logic gate field effect transistors (224) each formed at a selected intersection of one of the row locations and one of the column locations. Elongate gate conductors (e.g., G, H, I) are formed at selected row locations in the logic array (212), each gate conductor provided as a gate for one or more of the logic gate transistors (224). A plurality of elongate second conductors (222) connect to selected ones of the sources or drains of the transistors (224) and to non-Boolean portions of the dynamic logic circuits. The non-Boolean portions are formed in an adjacent tile section (214) in the semi-conductor layer separate from the logic array (212).

Abstract: Random logic circuitry (210) is laid out in a logic array (212) that has a plurality of row and column locations. The logic circuitry (210) implements a plurality of dynamic logic circuits, each logic circuit having a plurality of logic gate field effect transistors (224) each formed at a selected intersection of one of the row locations and a predetermined plurality of the column locations. Elongate gate conductors (584-602) are formed at selected row locations in the logic array (212), each gate conductor provided as a gate for one or more of the logic gate transistors (224). Selected ones (e.g. 514, 544) of the transistors are merged in a row direction if the logic does not require them to be isolated from one another. A plurality of elongate second conductors (222) interconnect to selected ones of the sources or drains of the transistors (224). Non-Boolean portions of the logic circuitry are formed in an adjacent tile section (214) in the semiconductor layer separate from the logic array (212).

Abstract: Random logic circuitry (210) is laid out in a logic array (212) that has a plurality of row and column locations. The logic circuitry (210) implements a plurality of dynamic logic circuits, each logic circuit having a plurality of logic gate field effect transistors (224) each formed at a selected intersection of one of the row locations and one of the column locations. Elongate gate conductors (e.g., G, H, I) are formed at selected row locations in the logic array (212), each gate conductor provided as a gate for one or more of the logic gate transistors (224). A plurality of elongate second conductors (222) connect to selected ones of the sources or drains of the transistors (224) and to non-Boolean portions of the dynamic logic circuits. The non-Boolean portions are formed in an adjacent tile section (214) in the semi-conductor layer separate from the logic array (212).