Patents by Inventor Douglas Ohlberg
Douglas Ohlberg has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8878342Abstract: Various embodiments of the present invention are direct to nanoscale, reconfigurable, memristor devices. In one aspect, a memristor device comprises an electrode (301,303) and an alloy electrode (502,602). The device also includes an active region (510,610) sandwiched between the electrode and the alloy electrode. The alloy electrode forms dopants in a sub-region of the active region adjacent to the alloy electrode. The active region can be operated by selectively positioning the dopants within the active region to control the flow of charge carriers between the electrode and the alloy electrode.Type: GrantFiled: January 26, 2009Date of Patent: November 4, 2014Assignee: Hewlett-Packard Development Company, L.P.Inventors: Nathaniel J. Quitoriano, Douglas Ohlberg, Philip J. Kuekes, Jianhua Yang
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Patent number: 8502198Abstract: A switching device includes at least one bottom electrode and at least one top electrode. The top electrode crosses the bottom electrode at a non-zero angle, thereby forming a junction. A metal oxide layer is established on at least one of the bottom electrode or the top electrode. A molecular layer including a monolayer of organic molecules and a source of water molecules is established in the junction. Upon introduction of a forward bias, the molecular layer facilitates a redox reaction between the electrodes, thereby reducing a tunneling gap between the electrodes.Type: GrantFiled: April 28, 2006Date of Patent: August 6, 2013Assignee: Hewlett-Packard Development Company, L.P.Inventors: R. Stanley Williams, Zhiyong Li, Douglas Ohlberg, Philip J. Kuekes, Duncan Stewart
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Publication number: 20110221027Abstract: Various embodiments of the present invention are direct to nanoscale, reconfigurable, memristor devices. In one aspect, a memristor device comprises an electrode (301,303) and an alloy electrode (502,602). The device also includes an active region (510,610) sandwiched between the electrode and the alloy electrode. The alloy electrode forms dopants in a sub-region of the active region adjacent to the alloy electrode. The active region can be operated by selectively positioning the dopants within the active region to control the flow of charge carriers between the electrode and the alloy electrode.Type: ApplicationFiled: January 26, 2009Publication date: September 15, 2011Inventors: Nathaniel J. Quitoriano, Douglas Ohlberg, Philip J. Kuekes, Jianhua Yang
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Patent number: 7985962Abstract: A memristive device includes a first electrode, a second electrode, and an active region disposed between the first and second electrodes. At least one of the first and second electrodes is a metal oxide electrode.Type: GrantFiled: December 23, 2008Date of Patent: July 26, 2011Assignee: Hewlett-Packard Development Company, L.P.Inventors: Alexandre M. Bratkovski, Douglas Ohlberg, Jianhua Yang
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Publication number: 20100155686Abstract: A memristive device includes a first electrode, a second electrode, and an active region disposed between the first and second electrodes. At least one of the first and second electrodes is a metal oxide electrode.Type: ApplicationFiled: December 23, 2008Publication date: June 24, 2010Inventors: Alexandre M. Bratkovski, Douglas Ohlberg, Jianhua Yang
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Patent number: 7741638Abstract: A control layer for use in a junction of a nanoscale electronic switching device is disclosed. The control layer includes a material that is chemically compatible with a connecting layer and at least one electrode in the nanoscale switching device. The control layer is adapted to control at least one of electrochemical reaction paths, electrophysical reaction paths, and combinations thereof during operation of the device.Type: GrantFiled: November 23, 2005Date of Patent: June 22, 2010Assignee: Hewlett-Packard Development Company, L.P.Inventors: Duncan Stewart, Douglas Ohlberg, R. Stanley Williams, Philip J. Kuekes
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Patent number: 7443711Abstract: Programmable impedance devices and methods of fabricating the devices are disclosed. The programmable impedance devices exhibit non-volatile tunable impedance properties. A programmable impedance device includes a first electrode, a second electrode and a programmable material disposed between the two electrodes. The programmable material may be disposed at a junction between the first and second electrodes.Type: GrantFiled: December 16, 2004Date of Patent: October 28, 2008Assignee: Hewlett-Packard Development Company, L.P.Inventors: Duncan R. Stewart, Patricia A. Beck, Douglas A. Ohlberg
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Patent number: 7309875Abstract: A molecular device is provided. The molecular device comprises a junction formed by a pair of crossed electrodes where a first electrode is crossed by a second electrode at a non-zero angle and at least one connector species including at least one switchable moiety and connecting the pair of crossed electrode in the junction. The junction has a functional dimension ranging in size from microns to nanometers. The molecular device further includes a buffer layer comprising nanocrystals interposed between the connector species and the second electrode.Type: GrantFiled: November 22, 2004Date of Patent: December 18, 2007Assignee: Hewlett-Packard Development Company, L.P.Inventor: Douglas A. Ohlberg
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Publication number: 20070252128Abstract: A switching device includes at least one bottom electrode and at least one top electrode. The top electrode crosses the bottom electrode at a non-zero angle, thereby forming a junction. A metal oxide layer is established on at least one of the bottom electrode or the top electrode. A molecular layer including a monolayer of organic molecules and a source of water molecules is established in the junction. Upon introduction of a forward bias, the molecular layer facilitates a redox reaction between the electrodes, thereby reducing a tunneling gap between the electrodes.Type: ApplicationFiled: April 28, 2006Publication date: November 1, 2007Inventors: R. Williams, Zhiyong Li, Douglas Ohlberg, Philip Kuekes, Duncan Stewart
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Publication number: 20070254169Abstract: Structures including a substrate having a nano-patterned surface, and a self-assembled monolayer of an organic material on the nano-patterned surface are provided. The self-assembled monolayer is ordered with respect to features of the nano-patterned surface. Methods of making the structures and filament switching devices including a self-assembled monolayer are also provided.Type: ApplicationFiled: April 28, 2006Publication date: November 1, 2007Inventors: Theodore Kamins, Douglas Ohlberg, Amir Yasseri
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Publication number: 20070117256Abstract: A control layer for use in a junction of a nanoscale electronic switching device is disclosed. The control layer includes a material that is chemically compatible with a connecting layer and at least one electrode in the nanoscale switching device. The control layer is adapted to control at least one of electrochemical reaction paths, electrophysical reaction paths, and combinations thereof during operation of the device.Type: ApplicationFiled: November 23, 2005Publication date: May 24, 2007Inventors: Duncan Stewart, Douglas Ohlberg, R. Williams, Philip Kuekes
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Publication number: 20060108577Abstract: A molecular device is provided. The molecular device comprises a junction formed by a pair of crossed electrodes where a first electrode is crossed by a second electrode at a non-zero angle and at least one connector species including at least one switchable moiety and connecting the pair of crossed electrode in the junction. The junction has a functional dimension ranging in size from microns to nanometers. The molecular device further includes a buffer layer comprising nanocrystals interposed between the connector species and the second electrode.Type: ApplicationFiled: November 22, 2004Publication date: May 25, 2006Inventor: Douglas Ohlberg
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Publication number: 20060003594Abstract: A molecule for Langmuir-Blodgett (LB) deposition of a molecular layer. The molecule includes at least one switching moiety, a hydrophilicity-modifiable connecting group attached to one end of the moiety, and a hydrophilicity-non-modifiable connecting group attached to the other end of the moiety. The hydrophilicity-modifiable connecting group is transformable to a temporary end group upon adjustment in pH of the aqueous environment containing the molecule. The temporary end group is more hydrophilic than the hydrophilicity-modifiable connecting group and the hydrophilicity-non-modifiable connecting group. The difference in hydrophilicity between the temporary end group and the hydrophilicity-non-modifiable connecting group causes formation of a substantially well-oriented, uniform LB film at a water/solvent and/or water/air interface.Type: ApplicationFiled: June 30, 2004Publication date: January 5, 2006Inventors: Sean Zhang, Douglas Ohlberg, Zhiyong Li
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Publication number: 20050164412Abstract: A method for tailoring at least portions of an exposed non-planar layered surface of a conductive layer formed on a substrate having a first surface roughness to provide the exposed surface with a second surface roughness. The method includes: forming the conductive layer on the substrate; and tailoring at least portions of the exposed surface of the conductive layer in a plasma to at least smooth the exposed surface of the conductive layer, whereby the second surface roughness is essentially the same as the first surface roughness.Type: ApplicationFiled: November 22, 2004Publication date: July 28, 2005Inventors: Patricia Beck, Douglas Ohlberg, Duncan Stewart, Zhiyong Li
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Patent number: 6855647Abstract: A method is provided for fabricating molecular electronic devices comprising at least a bottom electrode and a molecular switch film on the bottom electrode. The method includes forming the bottom electrode by a process including: cleaning portions of the substrate where the bottom electrode is to be deposited; pre-sputtering the portions; depositing a conductive layer on at least the portions; and cleaning the top surface of the conductive layer. Advantageously, the conductive electrode properties include: low or controlled oxide formation (or possibly passivated), high melting point, high bulk modulus, and low diffusion. Smooth deposited film surfaces are compatible with Langmuir-Blodgett molecular film deposition. Tailored surfaces are further useful for SAM deposition. The metallic nature gives high conductivity connection to molecules. Barrier layers may be added to the device stack, i.e., Al2O3 over the conductive layer.Type: GrantFiled: April 2, 2003Date of Patent: February 15, 2005Assignee: Hewlett-Packard Development Company, L.P.Inventors: Patricia A. Beck, Douglas Ohlberg, Duncan Stewart, Zhiyong Li
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Publication number: 20050032203Abstract: A method is provided for fabricating molecular electronic devices comprising at least a bottom electrode and a molecular switch film on the bottom electrode. The method includes forming the bottom electrode by a process including: cleaning portions of the substrate where the bottom electrode is to be deposited; pre-sputtering the portions; depositing a conductive layer on at least the portions; and cleaning the top surface of the conductive layer. Advantageously, the conductive electrode properties include: low or controlled oxide formation (or possibly passivated), high melting point, high bulk modulus, and low diffusion. Smooth deposited film surfaces are compatible with Langmuir-Blodgett molecular film deposition. Tailored surfaces are further useful for SAM deposition. The metallic nature gives high conductivity connection to molecules. Barrier layers may be added to the device stack, i.e., Al2O3 over the conductive layer.Type: ApplicationFiled: August 30, 2004Publication date: February 10, 2005Inventors: Patricia Beck, Douglas Ohlberg, Duncan Stewart, Zhiyong Li
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Publication number: 20050026427Abstract: A method is provided for fabricating molecular electronic devices comprising at least a bottom electrode and a molecular switch film on the bottom electrode. The method includes forming the bottom electrode by a process including: cleaning portions of the substrate where the bottom electrode is to be deposited; pre-sputtering the portions; depositing a conductive layer on at least the portions; and cleaning the top surface of the conductive layer. Advantageously, the conductive electrode properties include: low or controlled oxide formation (or possibly passivated), high melting point, high bulk modulus, and low diffusion. Smooth deposited film surfaces are compatible with Langmuir-Blodgett molecular film deposition. Tailored surfaces are further useful for SAM deposition. The metallic nature gives high conductivity connection to molecules. Barrier layers may be added to the device stack, i.e., Al2O3 over the conductive layer.Type: ApplicationFiled: August 30, 2004Publication date: February 3, 2005Inventors: Patricia Beck, Douglas Ohlberg, Duncan Stewart, Zhiyong Li
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Publication number: 20040195688Abstract: A method is provided for fabricating molecular electronic devices comprising at least a bottom electrode and a molecular switch film on the bottom electrode. The method includes forming the bottom electrode by a process including: cleaning portions of the substrate where the bottom electrode is to be deposited; pre-sputtering the portions; depositing a conductive layer on at least the portions; and cleaning the top surface of the conductive layer. Advantageously, the conductive electrode properties include: low or controlled oxide formation (or possibly passivated), high melting point, high bulk modulus, and low diffusion. Smooth deposited film surfaces are compatible with Langmuir-Blodgett molecular film deposition. Tailored surfaces are further useful for SAM deposition. The metallic nature gives high conductivity connection to molecules. Barrier layers may be added to the device stack, i.e., Al2O3 over the conductive layer.Type: ApplicationFiled: April 2, 2003Publication date: October 7, 2004Inventors: Patricia A. Beck, Douglas Ohlberg, Duncan Stewart, Zhiyong Li
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Patent number: 6773616Abstract: Self-organized, or self-assembled, nanowires of a first composition may be used as an etching mask for fabrication of nanowires of a second composition. The method for forming such nanowires comprises: (a) providing an etchable layer of the second composition and having a buried insulating layer beneath a major surface thereof; (b) growing self-assembled nanowires on the surface of the etchable layer; and (c) etching the etchable layer anisotropically down to the insulating layer, using the self-assembled nanowires as a mask. The self-assembled nanowires may be removed or left. In either event, nanowires of the second composition are formed. The method enables the formation of one-dimensional crystalline nanowires with widths and heights at the nanometer scale, and lengths at the micrometer scale, which are aligned along certain crystallographic directions with high crystal quality.Type: GrantFiled: December 26, 2001Date of Patent: August 10, 2004Assignee: Hewlett-Packard Development Company, L.P.Inventors: Yong Chen, Douglas A. A. Ohlberg, Theodore I. Kamins, R. Stanley Williams
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Patent number: 6656573Abstract: Self-assembled nanowires are provided, comprising nanowires of a first crystalline composition formed on a substrate of a second crystalline composition. The two crystalline materials are characterized by an asymmetric lattice mismatch, in which in the interfacial plane between the two materials, the first material has a close lattice match (in any direction) with the second material and has a large lattice mismatch in all other major crystallographic directions with the second material. This allows the unrestricted growth of the epitaxial crystal in the first direction, but limits the width in the other.Type: GrantFiled: November 13, 2001Date of Patent: December 2, 2003Assignee: Hewlett-Packard Development Company, L.P.Inventors: Yong Chen, R. Stanley Williams, Douglas A. A. Ohlberg