Patents by Inventor Douglas P. Stadtler
Douglas P. Stadtler has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11957065Abstract: Various techniques and apparatus permit fabrication of superconductive circuits. A superconducting integrated circuit comprising a superconducting stud via, a kinetic inductor, and a capacitor may be formed. Forming a superconducting stud via in a superconducting integrated circuit may include masking with a hard mask and masking with a soft mask. Forming a superconducting stud via in a superconducting integrated circuit may include depositing a dielectric etch stop layer. Interlayer misalignment in the fabrication of a superconducting integrated circuit may be measured by an electrical vernier. Interlayer misalignment in the fabrication of a superconducting integrated circuit may be measured by a chain of electrical verniers and a Wheatstone bridge. A superconducting integrated circuit with three or more metal layers may include an enclosed, matched, on-chip transmission line. A metal wiring layer in a superconducting integrated circuit may be encapsulated.Type: GrantFiled: May 17, 2021Date of Patent: April 9, 2024Assignee: 1372934 B.C. LTD.Inventors: Shuiyuan Huang, Byong H. Oh, Douglas P. Stadtler, Edward G. Sterpka, Paul I. Bunyk, Jed D. Whittaker, Fabio Altomare, Richard G. Harris, Colin C. Enderud, Loren J. Swenson, Nicolas C. Ladizinsky, Jason J. Yao, Eric G. Ladizinsky
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Patent number: 11856871Abstract: Systems and methods for fabricating a superconducting integrated circuit that includes wiring layers comprising low-noise material are described. A superconducting integrated circuit can be implemented in a computing system that includes a quantum processor. Such a superconducting integrated circuit includes a first set of one or more wiring layers that form a noise-susceptible superconducting device that can decrease processor when exposed to noise. The superconducting integrated circuit can further include a second set of one or more wiring layers that form a superconducting device that is less susceptible to noise. Fabricating a superconducting device that contains low-noise material can include depositing and patterning a wiring layer comprising a first material that is superconductive in a respective range of temperatures and depositing and patterning a different wiring layer comprising a second material that is superconductive in a respective range of temperatures.Type: GrantFiled: February 25, 2022Date of Patent: December 26, 2023Assignee: D-WAVE SYSTEMS INC.Inventors: Trevor M. Lanting, Danica W. Marsden, Byong Hyop Oh, Eric G. Ladizinsky, Shuiyuan Huang, J. Jason Yao, Douglas P. Stadtler
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Publication number: 20220263007Abstract: Systems and methods for fabricating a superconducting integrated circuit that includes wiring layers comprising low-noise material are described. A superconducting integrated circuit can be implemented in a computing system that includes a quantum processor. Such a superconducting integrated circuit includes a first set of one or more wiring layers that form a noise-susceptible superconducting device that can decrease processor when exposed to noise. The superconducting integrated circuit can further include a second set of one or more wiring layers that form a superconducting device that is less susceptible to noise. Fabricating a superconducting device that contains low-noise material can include depositing and patterning a wiring layer comprising a first material that is superconductive in a respective range of temperatures and depositing and patterning a different wiring layer comprising a second material that is superconductive in a respective range of temperatures.Type: ApplicationFiled: February 25, 2022Publication date: August 18, 2022Inventors: Trevor M. Lanting, Danica W. Marsden, Byong Hyop Oh, Eric G. Ladizinsky, Shuiyuan Huang, J. Jason Yao, Douglas P. Stadtler
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Publication number: 20210384406Abstract: Various techniques and apparatus permit fabrication of superconductive circuits. A superconducting integrated circuit comprising a superconducting stud via, a kinetic inductor, and a capacitor may be formed. Forming a superconducting stud via in a superconducting integrated circuit may include masking with a hard mask and masking with a soft mask. Forming a superconducting stud via in a superconducting integrated circuit may include depositing a dielectric etch stop layer. Interlayer misalignment in the fabrication of a superconducting integrated circuit may be measured by an electrical vernier. Interlayer misalignment in the fabrication of a superconducting integrated circuit may be measured by a chain of electrical verniers and a Wheatstone bridge. A superconducting integrated circuit with three or more metal layers may include an enclosed, matched, on-chip transmission line. A metal wiring layer in a superconducting integrated circuit may be encapsulated.Type: ApplicationFiled: May 17, 2021Publication date: December 9, 2021Inventors: Shuiyuan Huang, Byong H. Oh, Douglas P. Stadtler, Edward G. Sterpka, Paul I. Bunyk, Jed D. Whittaker, Fabio Altomare, Richard G. Harris, Colin C. Enderud, Loren J. Swenson, Nicolas C. Ladizinsky, Jason J. Yao, Eric G. Ladizinsky
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Patent number: 11038095Abstract: Various techniques and apparatus permit fabrication of superconductive circuits. A superconducting integrated circuit comprising a superconducting stud via, a kinetic inductor, and a capacitor may be formed. Forming a superconducting stud via in a superconducting integrated circuit may include masking with a hard mask and masking with a soft mask. Forming a superconducting stud via in a superconducting integrated circuit may include depositing a dielectric etch stop layer. Interlayer misalignment in the fabrication of a superconducting integrated circuit may be measured by an electrical vernier. Interlayer misalignment in the fabrication of a superconducting integrated circuit may be measured by a chain of electrical verniers and a Wheatstone bridge. A superconducting integrated circuit with three or more metal layers may include an enclosed, matched, on-chip transmission line. A metal wiring layer in a superconducting integrated circuit may be encapsulated.Type: GrantFiled: January 31, 2018Date of Patent: June 15, 2021Assignee: D-WAVE SYSTEMS INC.Inventors: Shuiyuan Huang, Byong H. Oh, Douglas P. Stadtler, Edward G. Sterpka, Paul I. Bunyk, Jed D. Whittaker, Fabio Altomare, Richard G. Harris, Colin C. Enderud, Loren J. Swenson, Nicolas C. Ladizinsky, Jason J. Yao, Eric G. Ladizinsky
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Publication number: 20200152851Abstract: Systems and methods for fabricating a superconducting integrated circuit that includes wiring layers comprising low-noise material are described. A superconducting integrated circuit can be implemented in a computing system that includes a quantum processor. Such a superconducting integrated circuit includes a first set of one or more wiring layers that form a noise-susceptible superconducting device that can decrease processor when exposed to noise. The superconducting integrated circuit can further include a second set of one or more wiring layers that form a superconducting device that is less susceptible to noise. Fabricating a superconducting device that contains low-noise material can include depositing and patterning a wiring layer comprising a first material that is superconductive in a respective range of temperatures and depositing and patterning a different wiring layer comprising a second material that is superconductive in a respective range of temperatures.Type: ApplicationFiled: November 12, 2019Publication date: May 14, 2020Inventors: Trevor M. Lanting, Danica W. Marsden, Byong Hyop Oh, Eric G. Ladizinsky, Shuiyuan Huang, J. Jason Yao, Douglas P. Stadtler
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Publication number: 20200144476Abstract: Various techniques and apparatus permit fabrication of superconductive circuits. A superconducting integrated circuit comprising a superconducting stud via, a kinetic inductor, and a capacitor may be formed. Forming a superconducting stud via in a superconducting integrated circuit may include masking with a hard mask and masking with a soft mask. Forming a superconducting stud via in a superconducting integrated circuit may include depositing a dielectric etch stop layer. Interlayer misalignment in the fabrication of a superconducting integrated circuit may be measured by an electrical vernier. Interlayer misalignment in the fabrication of a superconducting integrated circuit may be measured by a chain of electrical verniers and a Wheatstone bridge. A superconducting integrated circuit with three or more metal layers may include an enclosed, matched, on-chip transmission line. A metal wiring layer in a superconducting integrated circuit may be encapsulated.Type: ApplicationFiled: January 31, 2018Publication date: May 7, 2020Inventors: Shuiyuan Huang, Byong H. Oh, Douglas P. Stadtler, Edward G. Sterpka, Paul I. Bunyk, Jed D. Whittaker, Fabio Altomare, Richard G. Harris, Colin C. Enderud, Loren J. Swenson, Nicolas C. Ladizinsky, Jason J. Yao, Eric G. Ladizinsky
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Patent number: 6827826Abstract: Physical vapor deposition processes provide optical materials with controlled and uniform refractive index that meet the requirements for active and passive planar optical devices. All processes use radio frequency (RF) sputtering with a wide area target, larger in area than the substrate on which material is deposited, and uniform plasma conditions which provide uniform target erosion. In addition, a second RF frequency can be applied to the sputtering target and RF power can be applied to the substrate producing substrate bias. Multiple approaches for controlling refractive index are provided. The present RF sputtering methods for material deposition and refractive index control are combined with processes commonly used in semiconductor fabrication to produce planar optical devices such surface ridge devices, buried ridge devices and buried trench devices. A method for forming composite wide area targets from multiple tiles is also provided.Type: GrantFiled: November 4, 2002Date of Patent: December 7, 2004Assignee: Symmorphix, Inc.Inventors: Richard E. Demaray, Kai-An Wang, Ravi B. Mullapudi, Douglas P. Stadtler, Hongmei Zhang, Rajiv Pethe
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Publication number: 20030127319Abstract: Physical vapor deposition processes provide optical materials with controlled and uniform refractive index that meet the requirements for active and passive planar optical devices. All processes use radio frequency (RF) sputtering with a wide area target, larger in area than the substrate on which material is deposited, and uniform plasma conditions which provide uniform target erosion. In addition, a second RF frequency can be applied to the sputtering target and RF power can be applied to the substrate producing substrate bias. Multiple approaches for controlling refractive index are provided. The present RF sputtering methods for material deposition and refractive index control are combined with processes commonly used in semiconductor fabrication to produce planar optical devices such surface ridge devices, buried ridge devices and buried trench devices. A method for forming composite wide area targets from multiple tiles is also provided.Type: ApplicationFiled: November 4, 2002Publication date: July 10, 2003Inventors: Richard E. Demaray, Kai-An Wang, Ravi B. Mullapudi, Douglas P. Stadtler, Hongmei Zhang, Rajiv Pethe
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Patent number: 6506289Abstract: Physical vapor deposition processes provide optical materials with controlled and uniform refractive index that meet the requirements for active and passive planar optical devices. All processes use radio frequency (RF) sputtering with a wide area target, larger in area than the substrate on which material is deposited, and uniform plasma conditions which provide uniform target erosion. In addition, a second RF frequency can be applied to the sputtering target and RF power can be applied to the substrate producing substrate bias. Multiple approaches for controlling refractive index are provided. The present RF sputtering methods for material deposition and refractive index control are combined with processes commonly used in semiconductor fabrication to produce planar optical devices such surface ridge devices, buried ridge devices and buried trench devices. A method for forming composite wide area targets from multiple tiles is also provided.Type: GrantFiled: July 10, 2001Date of Patent: January 14, 2003Assignee: Symmorphix, Inc.Inventors: Richard E. Demaray, Kai-An Wang, Ravi B. Mullapudi, Douglas P. Stadtler, Hongmei Zhang, Rajiv Pethe
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Publication number: 20020033330Abstract: Physical vapor deposition processes provide optical materials with controlled and uniform refractive index that meet the requirements for active and passive planar optical devices. All processes use radio frequency (RF) sputtering with a wide area target, larger in area than the substrate on which material is deposited, and uniform plasma conditions which provide uniform target erosion. In addition, a second RF frequency can be applied to the sputtering target and RF power can be applied to the substrate producing substrate bias. Multiple approaches for controlling refractive index are provided. The present RF sputtering methods for material deposition and refractive index control are combined with processes commonly used in semiconductor fabrication to produce planar optical devices such surface ridge devices, buried ridge devices and buried trench devices. A method for forming composite wide area targets from multiple tiles is also provided.Type: ApplicationFiled: July 10, 2001Publication date: March 21, 2002Inventors: Richard E. Demaray, Kai-An Wang, Ravi B. Mullapudi, Douglas P. Stadtler, Hongmei Zhang, Rajiv Pethe