Abstract: A media-compatible sensing structure (210) that employs strain-sensing elements (222) formed in or on a silicon chip (212). The sensor (210) generally includes a metal body (214) having a diaphragm (216) and an edge (226) formed by an abrupt change in the thickness of the metal body (214) in a direction normal to the diaphragm (216). The silicon chip (212) is secured directly to the metal diaphragm (216) and has at least one strain-sensing element (222) aligned with the edge (226) of the body (214) in the direction normal to the diaphragm (216), such that movement of the diaphragm (216) induces strain in the silicon chip (212) that is localized at the strain-sensing element (222).

Abstract: A silicon sensing cell (12) capable of sensing force and/or displacement, and particular embodiments of the sensing cell (12) for particular force and/or displacement-sensing applications. The sensing cell (12) generally includes a diaphragm (18), a silicon sensing element (28) operatively associated with the diaphragm (18) to sense strain or deflection of the diaphragm (18), a base (14) supporting the diaphragm (18) so that the base (14) and the diaphragm (18) define a recess (22), and a force-distributing member (20) within the recess (22) and contacting the diaphragm (18). The diaphragm (18) is preferably single-crystal silicon, and the sensing element (28) can be a piezoresistive, piezoelectric or capacitive element preferably formed in the diaphragm (18) using semiconductor fabrication processes.

Abstract: A method for making and vacuum packaging a silicon micromachined motion sensor, such as a gyroscope, at the chip level. The method involves micromachining a trench-isolated sensing element in a sensing chip, and then attaching a circuit chip to enclose the sensing element. Solder bumps serve to attach the circuit chip to the sensing chip, form a hermetic seal to enable vacuum-packaging of the sensor, and electrically interconnect the sensing chip with the circuit chip. Conductive runners formed on the enclosed surface of the circuit chip serve to electrically interconnect the sensing element with its associated sensing structures.

Abstract: A method for concurrently forming a micromachine element and an integrated circuit device on the same substrate, such that fabrication of the micromachine element and the circuit device requires a minimal number of processing steps. The method is adapted for forming sensing devices, such as accelerometers and pressure sensors, which utilize a small micromachine element, such as a bridge, cantilevered beam, suspended mass, membrane or capacitive element that is supported over a cavity formed in the silicon substrate. Piezoresistors used to detect the deflection of the micromachine element are formed simultaneously with elements of the integrated circuit devices, such that a minimal number of processing steps are required.

Abstract: An all-silicon monolithic capacitive absolute pressure-sensing device and method for making the same. The device employs a single-crystal silicon diaphragm that serves at a flexible capacitor plate of a variable capacitor. The diaphragm is bonded to a single-crystal silicon wafer to overlie a cavity etched into the wafer. A fixed capacitor plate of the variable capacitor is formed by a heavily-doped region at the bottom of the cavity. A thin dielectric layer is grown on the fixed capacitor plate to complete the capacitor. The cavity has a minimal depth such that the fixed capacitor plate provides overpressure protection for the diaphragm. At least a portion of the operating range of the pressure sensor occurs while the diaphragm is contacting the doped region. As a result, the capacitive output signal of the pressure sensor is produced by changes in contact area between the diaphragm and a thin dielectric situated on the doped region in response to pressure applied to the diaphragm.

Abstract: A silicon flow sensor is provided having an uncomplicated design and construction, while also exhibiting a desirable level of sensitivity for use in automotive applications. The primary sensing component is preferably formed by a single silicon chip on which associated signal conditioning and compensating circuitry can be provided. The chip includes a base region from which a vane is cantilevered so as to be adapted to deflect in either of two directions when impinged by fluid flow. A beam region is present intermediate the vane and the base region on which a strain sensing element is present, such that strain occurring in the beam region as a result of vane deflection is sensed to indicate the degree to which the vane is deflected. The construction of the flow sensor is such that its sensitivity can be readily modified during its manufacture in order to optimize the sensor for its intended use.