Patents by Inventor Douglas W. Ormond

Douglas W. Ormond has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5631498
    Abstract: A metallization layer is formed on a substrate with improved adhesion thereto by performing the deposition at an elevated temperature which favors the formation of chemical bonds of the metal to the substrate as well as clusters of metal embedded within the substrate and contiguous with the metallization layer. In polymer substrates the chemical bond is made to carbonyl functional groups such as ketones or aldehydes. The adhesion is enhanced by the removal of moisture from the surface of the substrate at the elevated temperatures employed. A high degree of adhesion is also obtained through the deposition of a mixture of metals including chromium and copper which initially has a high chromium to copper ratio which is decreased during the deposition process. Completion of the process is determined by the reaching of a final desired chromium to copper ratio as observed by optical emission spectroscopy. The process can be carried out on a continuous basis by the use of a multi-chamber vacuum sputtering system.
    Type: Grant
    Filed: May 19, 1995
    Date of Patent: May 20, 1997
    Assignee: International Business Machines Corporation
    Inventors: Morris Anschel, Douglas W. Ormond, Carl P. Hayunga
  • Patent number: 4805683
    Abstract: A method for selectively depositing a plurality of metal layers on a substrate. The method includes the steps of depositing at least one layer of blanket metal on a surface of a substrate, building a lift-off stencil over the blanket metal, depositing at least one layer of redundant metal over the lift-off stencil, depositing a first etch-resistant barrier over the redundant metal, removing the lift-off stencil and the overlying layers of redundant metal and the etch-resistant barrier, depositing a second etch-resistant barrier over the blanket metal and the first etch-resistant barrier, and then reactive ion etching (RIE) the second etch-resistant barrier so as to expose the blanket metal and at least partially remove the second etch-resistant barrier from the first etch-resistant barrier. A final step of the method includes etching the blanket metal. Also disclosed is a metallurgical structure for a packaging substrate. The metallurgical structure includes layers of blanket metal and redundant metal.
    Type: Grant
    Filed: March 4, 1988
    Date of Patent: February 21, 1989
    Assignee: International Business Machines Corporation
    Inventors: Ingrid E. Magdo, Douglas W. Ormond, Jr.