Abstract: An integrated circuit (IC) design with multiple metal layers containing cells requiring secondary power supply. After placing the cells and stripes of a primary power/ground grid in metal layers of the IC design, specific cells are provided with secondary power stripes in a first metal layer. The secondary power stripes are designed in such a way that each secondary power/ground stripe exhibits a full overlap with a stripe of a corresponding primary power/ground grid in a different metal layer. Subsequently, signals from the IC design are routed, and power vias between the primary power/ground grid stripes and the secondary power/ground stripes are generated.

Abstract: Techniques for using gate arrays to create capacitive structures within an integrated circuit are disclosed. Embodiments comprise placing a gate array of P-type field effect transistors (P-fets) and N-type field effect transistors (N-fets) in an integrated circuit design, coupling drains and sources for one or more P-fets and gates for one or more N-fets to a power supply ground, and coupling gates for the one or more P-fets and the drains and sources for one or more N-fets to a positive voltage of the power supply. In some embodiments, source-to-drain leakage current for capacitive apparatuses of P-fets and N-fets are minimized by biasing one or more P-fets and one or more N-fets to the positive voltage and the ground, respectively. In other embodiments, the capacitive structures may be implemented using fusible elements to isolate the capacitive structures in case of shorts.

Abstract: An automated method and apparatus for positioning gate array circuits in an integrated circuit design. An initial integrated circuit design includes logic cells and gate array fill circuits positioned thereon. The gate array fill circuits are positioned in available space between the adjacent logic cells so as to fill the available space with the maximum gate array fill circuits. A gate array logic element to be positioned in the integrated circuit design, such as may be required by an engineering change to the circuit design, is automatically positioned between adjacent logic cells so as to allow for full utilization of any space remaining between the adjacent logic cells by gate array fill circuits.

Abstract: Techniques for using gate arrays to create capacitive structures within an integrated circuit are disclosed. Embodiments comprise placing a gate array of P-type field effect transistors (P-fets) and N-type field effect transistors (N-fets) in an integrated circuit design, coupling drains and sources for one or more P-fets and gates for one or more N-fets to a power supply ground, and coupling gates for the one or more P-fets and the drains and sources for one or more N-fets to a positive voltage of the power supply. In some embodiments, source-to-drain leakage current for capacitive apparatuses of P-fets and N-fets are minimized by biasing one or more P-fets and one or more N-fets to the positive voltage and the ground, respectively. In other embodiments, the capacitive structures may be implemented using fusible elements to isolate the capacitive structures in case of shorts.

Abstract: Techniques for using gate arrays to create capacitive structures within an integrated circuit are disclosed. Embodiments comprise placing a gate array of P-type field effect transistors (P-fets) and N-type field effect transistors (N-fets) in an integrated circuit design, coupling drains and sources for one or more P-fets and gates for one or more N-fets to a power supply ground, and coupling gates for the one or more P-fets and the drains and sources for one or more N-fets to a positive voltage of the power supply. In some embodiments, source-to-drain leakage current for capacitive apparatuses of P-fets and N-fets are minimized by biasing one or more P-fets and one or more N-fets to the positive voltage and the ground, respectively. In other embodiments, the capacitive structures may be implemented using fusible elements to isolate the capacitive structures in case of shorts.

Abstract: An integrated circuit (IC) design with multiple metal layers containing cells requiring secondary power supply. After placing the cells and stripes of a primary power/ground grid in metal layers of the IC design, specific cells are provided with secondary power stripes in a first metal layer. The secondary power stripes are designed in such a way that each secondary power/ground stripe exhibits a full overlap with a stripe of a corresponding primary power/ground grid in a different metal layer. Subsequently, signals from the IC design are routed, and power vias between the primary power/ground grid stripes and the secondary power/ground stripes are generated.

Abstract: An automated method and apparatus for positioning gate array circuits in an integrated circuit design. An initial integrated circuit design includes logic cells and gate array fill circuits positioned thereon. The gate array fill circuits are positioned in available space between the adjacent logic cells so as to fill the available space with the maximum gate array fill circuits. A gate array logic element to be positioned in the integrated circuit design, such as may be required by an engineering change to the circuit design, is automatically positioned between adjacent logic cells so as to allow for full utilization of any space remaining between the adjacent logic cells by gate array fill circuits.

Abstract: Techniques for using gate arrays to create capacitive structures within an integrated circuit are disclosed. Embodiments comprise placing a gate array of P-type field effect transistors (P-fets) and N-type field effect transistors (N-fets) in an integrated circuit design, coupling drains and sources for one or more P-fets and gates for one or more N-fets to a power supply ground, and coupling gates for the one or more P-fets and the drains and sources for one or more N-fets to a positive voltage of the power supply. In some embodiments, source-to-drain leakage current for capacitive apparatuses of P-fets and N-fets are minimized by biasing one or more P-fets and one or more N-fets to the positive voltage and the ground, respectively. In other embodiments, the capacitive structures may be implemented using fusible elements to isolate the capacitive structures in case of shorts.

Abstract: Using gate arrays to create capacitive structures within an integrated circuit are disclosed. Embodiments comprise having a gate array of P-type field effect transistors (P-fets) and N-type field effect transistors (N-fets) in an integrated circuit design, coupling drains and sources for one or more P-fets and gates for one or more N-fets to a power supply ground, and coupling gates for the one or more P-fets and the drains and sources for one or more N-fets to a positive voltage of the power supply. In some embodiments, source-to-drain leakage current for capacitive apparatuses of P-fets and N-fets are minimized by biasing one or more P-fets and one or more N-fets to the positive voltage and the ground, respectively. In other embodiments, the capacitive structures may be implemented using fusible elements to isolate the capacitive structures in case of shorts.

Abstract: An integrated circuit (IC) design, method and program product for reducing IC design power consumption. The IC is organized in circuit rows. Circuit rows may include a low voltage island powered by a low voltage (Vddl) supply and a high voltage island powered by a high voltage (Vddh) supply. Circuit elements including cells, latches and macros are placed with high or low voltage islands to minimize IC power while maintaining overall performance. Level converters may be placed with high voltage circuit elements.

Abstract: An integrated circuit (IC) design, method and program product for reducing IC design power consumption. The IC is organized in circuit rows. Circuit rows may include a low voltage island powered by a low voltage (Vddl) supply and a high voltage island powered by a high voltage (Vddh) supply. Circuit elements including cells, latches and macros are placed with high or low voltage islands to minimize IC power while maintaining overall performance. Level converters may be placed with high voltage circuit elements.

Abstract: An integrated circuit (IC) design, method and program product for reducing IC design power consumption. The IC is organized in circuit rows. Circuit rows may include a low voltage island powered by a low voltage (Vddl) supply and a high voltage island powered by a high voltage (Vddh) supply. Circuit elements including cells, latches and macros are placed with high or low voltage islands to minimize IC power while maintaining overall performance. Level converters may be placed with high voltage circuit elements.

Abstract: A method and program product for optimizing level converter placement in a multi supply integrated circuit. Each level converter is placed at a minimum power point to minimize net power and transitional delay from a first (low) voltage net source through the level converter and to a second (higher) voltage net sink. Then, inefficient level converters are eliminated. Level converters with fanin cones below a selected minimum cone size are deleted and low voltage sources to the deleted level converter reverted. Higher voltage level circuit elements receiving inputs from multiple level converters are replaced with equivalent low voltage circuit elements. Low voltage buffer driving level converters are both replaced by a single said level converter.