Patents by Inventor Doulgas Barlage

Doulgas Barlage has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Field effect transistor and method of fabrication
    Patent number: 7180109
    Abstract: The present invention is a novel field effect transistor having a channel region formed from a narrow bandgap semiconductor film formed on an insulating substrate. A gate dielectric layer is formed on the narrow bandgap semiconductor film. A gate electrode is then formed on the gate dielectric. A pair of source/drain regions formed from a wide bandgap semiconductor film or a metal is formed on opposite sides of the gate electrode and adjacent to the low bandgap semiconductor film.
    Type: Grant
    Filed: August 18, 2004
    Date of Patent: February 20, 2007
    Assignee: Intel Corporation
    Inventors: Robert S. Chau, Doulgas Barlage, Been-Yih Jin
  • Field effect transistor and method of fabrication
    Patent number: 7176075
    Abstract: The present invention is a novel field effect transistor having a channel region formed from a narrow bandgap semiconductor film formed on an insulating substrate. A gate dielectric layer is formed on the narrow bandgap semiconductor film. A gate electrode is then formed on the gate dielectric. A pair of source/drain regions formed from a wide bandgap semiconductor film or a metal is formed on opposite sides of the gate electrode and adjacent to the low bandgap semiconductor film.
    Type: Grant
    Filed: January 6, 2005
    Date of Patent: February 13, 2007
    Assignee: Intel Corporation
    Inventors: Robert S. Chau, Doulgas Barlage, Been-Yih Jin
  • Novel field effect transistor and method of fabrication
    Publication number: 20050133866
    Abstract: The present invention is a novel field effect transistor having a channel region formed from a narrow bandgap semiconductor film formed on an insulating substrate. A gate dielectric layer is formed on the narrow bandgap semiconductor film. A gate electrode is then formed on the gate dielectric. A pair of source/drain regions formed from a wide bandgap semiconductor film or a metal is formed on opposite sides of the gate electrode and adjacent to the low bandgap semiconductor film.
    Type: Application
    Filed: January 6, 2005
    Publication date: June 23, 2005
    Inventors: Robert Chau, Doulgas Barlage, Been-Yih Jin
  • Novel field effect transistor and method of fabrication
    Publication number: 20050017275
    Abstract: The present invention is a novel field effect transistor having a channel region formed from a narrow bandgap semiconductor film formed on an insulating substrate. A gate dielectric layer is formed on the narrow bandgap semiconductor film. A gate electrode is then formed on the gate dielectric. A pair of source/drain regions formed from a wide bandgap semiconductor film or a metal is formed on opposite sides of the gate electrode and adjacent to the low bandgap semiconductor film.
    Type: Application
    Filed: August 18, 2004
    Publication date: January 27, 2005
    Inventors: Robert Chau, Doulgas Barlage, Been-Yih Jin
  • Field effect transistor and method of fabrication
    Patent number: 6825506
    Abstract: The present invention is a novel field effect transistor having a channel region formed from a narrow bandgap semiconductor film formed on an insulating substrate. A gate dielectric layer is formed on the narrow bandgap semiconductor film. A gate electrode is then formed on the gate dielectric. A pair of source/drain regions formed from a wide bandgap semiconductor film or a metal is formed on opposite sides of the gate electrode and adjacent to the low bandgap semiconductor film.
    Type: Grant
    Filed: November 27, 2002
    Date of Patent: November 30, 2004
    Assignee: Intel Corporation
    Inventors: Robert S. Chau, Doulgas Barlage, Been-Yih Jin
  • Novel field effect transistor and method of fabrication
    Publication number: 20040113210
    Abstract: The present invention is a novel field effect transistor having a channel region formed from a narrow bandgap semiconductor film formed on an insulating substrate. A gate dielectric layer is formed on the narrow bandgap semiconductor film. A gate electrode is then formed on the gate dielectric. A pair of source/drain regions formed from a wide bandgap semiconductor film or a metal is formed on opposite sides of the gate electrode and adjacent to the low bandgap semiconductor film.
    Type: Application
    Filed: December 5, 2003
    Publication date: June 17, 2004
    Inventors: Robert S. Chau, Doulgas Barlage, Been-Yih Jin
  • Novel field effect transistor and method of fabrication
    Publication number: 20040099966
    Abstract: The present invention is a novel field effect transistor having a channel region formed from a narrow bandgap semiconductor film formed on an insulating substrate. A gate dielectric layer is formed on the narrow bandgap semiconductor film. A gate electrode is then formed on the gate dielectric. A pair of source/drain regions formed from a wide bandgap semiconductor film or a metal is formed on opposite sides of the gate electrode and adjacent to the low bandgap semiconductor film.
    Type: Application
    Filed: November 27, 2002
    Publication date: May 27, 2004
    Inventors: Robert S. Chau, Doulgas Barlage, Been-Yih Jin