Patents by Inventor Dov Frohman-Bentchkowsky

Dov Frohman-Bentchkowsky has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Electrically programmable and erasable MOS floating gate memory device employing tunneling and method of fabricating same
    Patent number: 4203158
    Abstract: An electrically programmable and electrically erasable MOS memory device suitable for high density integrated circuit memories is disclosed. Carriers are tunneled between a floating conductive gate and a doped region in the substrate to program and erase the device. A minimum area of thin oxide (70 A-200 A) is used to separate this doped region from the floating gate. In one embodiment, a second layer of polysilicon is used to protect the thin oxide region during certain processing steps.
    Type: Grant
    Filed: December 15, 1978
    Date of Patent: May 13, 1980
    Assignee: Intel Corporation
    Inventors: Dov Frohman-Bentchkowsky, Jerry Mar, George Perlegos, William S. Johnson