Patents by Inventor Dov Tzytkin
Dov Tzytkin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9547028Abstract: An electronic device comprises one or more functional units, each functional unit being clocked by a respective clock signal. The electronic device further comprises a monitoring unit for providing a real-time estimate of an electrical current consumed by the functional units. The monitoring unit provides the real-time estimate on the basis of characteristic signals. The characteristic signals may comprise one or more of said clock signals, or one or more clock generating signals used to generate said clock signals. The electronic device may further comprise a power regulator responsive to the real-time estimate. A method of estimating in real-time an electrical current consumed by one or more functional units is also described.Type: GrantFiled: April 20, 2011Date of Patent: January 17, 2017Assignee: NXP USA, INC.Inventors: Michael Priel, Dov Tzytkin, Sergey Sofer
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Patent number: 8749292Abstract: Embodiments of the present invention provide a voltage level shifter used to translate a binary input signal representing a binary sequence to a binary output signal representing the same binary sequence. The input signal is provided by an input voltage varying between a first input voltage level and a second input voltage level. The output signal is provided by an output voltage varying between a first output voltage level and a second output voltage level. The output signal has a delay relative to the input signal, and the voltage level shifter has a leakage current. The voltage level shifter has a first operating mode and a second operating mode. In the second operating mode, the delay is shorter while the leakage current is higher than in the first operating mode.Type: GrantFiled: April 22, 2010Date of Patent: June 10, 2014Assignee: Freescale Semiconductor, Inc.Inventors: Michael Priel, Sergey Sofer, Dov Tzytkin
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Patent number: 8737029Abstract: An integrated circuit, comprises a power supply node being connectable to a voltage supply (Vdd); a ground node connectable to ground (GND); and an electrostatic discharge protection structure for diverting an electrostatic discharge away from protected parts of the integrated circuit. A gated domain is present which is supply gated and/or ground gated with respect to the power supply node and/or the ground node, as well as a gating switch for gating the gated domain relative to the power supply node and/or the ground node. The gating switch enables in a connecting state, and in a disconnecting state inhibits, an electrical connection between the gated domain and at least one of: the power supply node and the ground node. The integrated circuit includes ESD gating control circuitry for controlling in case of an electrostatic discharge event the gated domain to be electrically connected to the power supply node and/or the ground node.Type: GrantFiled: May 14, 2009Date of Patent: May 27, 2014Assignee: Freescale Semiconductor, Inc.Inventors: Sergey Sofer, Yefim-Haim Fefer, Dov Tzytkin
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Publication number: 20140032139Abstract: An electronic device comprises one or more functional units, each functional unit being clocked by a respective clock signal. The electronic device further comprises a monitoring unit for providing a real-time estimate of an electrical current consumed by the functional units. The monitoring unit provides the real-time estimate on the basis of characteristic signals. The characteristic signals may comprise one or more of said clock signals, or one or more clock generating signals used to generate said clock signals. The electronic device may further comprise a power regulator responsive to the real-time estimate. A method of estimating in real-time an electrical current consumed by one or more functional units is also described.Type: ApplicationFiled: April 20, 2011Publication date: January 30, 2014Applicant: Freescale Semiconductor, Inc.Inventors: Michael Priel, Dov Tzytkin, Sergey Sofer
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Publication number: 20140021557Abstract: There is provided a semiconductor Integrated Circuit device having forward well biasing, in which at least one protection device is connected between a supply voltage and a forward well bias voltage.Type: ApplicationFiled: March 30, 2011Publication date: January 23, 2014Applicant: Freescale Semiconductor, Inc.Inventors: Michael Priel, Leonid Fleshel, Anton Rozen, Dov Tzytkin
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Publication number: 20130027109Abstract: Embodiments of the present invention provide a voltage level shifter used to translate a binary input signal representing a binary sequence to a binary output signal representing the same binary sequence. The input signal is provided by an input voltage varying between a first input voltage level and a second input voltage level. The output signal is provided by an output voltage varying between a first output voltage level and a second output voltage level. The output signal has a delay relative to the input signal, and the voltage level shifter has a leakage current. The voltage level shifter has a first operating mode and a second operating mode. In the second operating mode, the delay is shorter while the leakage current is higher than in the first operating mode.Type: ApplicationFiled: April 22, 2010Publication date: January 31, 2013Applicant: Freescale Semiconductor Inc.Inventors: Michael Priel, Sergey Sofer, Dov Tzytkin
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Publication number: 20120050926Abstract: An integrated circuit, comprises a power supply node being connectable to a voltage supply (Vdd); a ground node connectable to ground (GND); and an electrostatic discharge protection structure for diverting an electrostatic discharge away from protected parts of the integrated circuit. A gated domain is present which is supply gated and/or ground gated with respect to the power supply node and/or the ground node, as well as a gating switch for gating the gated domain relative to the power supply node and/or the ground node. The gating switch enables in a connecting state, and in a disconnecting state inhibits, an electrical connection between the gated domain and at least one of: the power supply node and the ground node. The integrated circuit includes ESD gating control circuitry for controlling in case of an electrostatic discharge event the gated domain to be electrically connected to the power supply node and/or the ground node.Type: ApplicationFiled: May 14, 2009Publication date: March 1, 2012Applicant: FREESCALE SEMICONDUCTOR, INCInventors: Sergey Sofer, Yefim-Haim Fefer, Dov Tzytkin
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Patent number: 8089259Abstract: A system that has low power recovery capabilities, the system includes: a switch that is adapted to provide a gated power supply to a power gated circuit in response to a control current; and a control signal generator adapted to control an intensity of the control current in response to a reception of a low power period end indicator, a value of the continuous supply voltage at a port of the control signal generator, a value of the gated supply voltage and an output signal of a high switching point buffer that is inputted by the gated supply voltage.Type: GrantFiled: October 30, 2008Date of Patent: January 3, 2012Assignee: Freescale Semiconductor, Inc.Inventors: Sergey Sofer, Vlad Goldman, Dov Tzytkin
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Publication number: 20100109633Abstract: A system that has low power recovery capabilities, the system includes: a switch that is adapted to provide a gated power supply to a power gated circuit in response to a control current; and a control signal generator adapted to control an intensity of the control current in response to a reception of a low power period end indicator, a value of the continuous supply voltage at a port of the control signal generator, a value of the gated supply voltage and an output signal of a high switching point buffer that is inputted by the gated supply voltage.Type: ApplicationFiled: October 30, 2008Publication date: May 6, 2010Inventors: Sergey SOFER, Vlad GOLDMAN, Dov TZYTKIN