Patents by Inventor Dovran AMANOV

Dovran AMANOV has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • MEMRISTOR AND NEUROMORPHIC DEVICE COMPRISING THE SAME
    Publication number: 20220320425
    Abstract: Provided are memristors and neuromorphic devices including the memristors. A memristor includes a lower electrode and an upper electrode that are apart from each other and first and second two-dimensional material layers that are arranged between the lower electrode and the upper electrode and stacked without a chemical bond therebetween.
    Type: Application
    Filed: June 9, 2022
    Publication date: October 6, 2022
    Applicants: Samsung Electronics Co., Ltd., President and Fellows Of Harvard College
    Inventors: Minhyun LEE, Dovran AMANOV, Renjing XU, Houk JANG, Haeryong KIM, Hyeonjin SHIN, Yeonchoo CHO, Donhee HAM
  • Memristor and neuromorphic device comprising the same
    Patent number: 11374171
    Abstract: Provided are memristors and neuromorphic devices including the memristors. A memristor includes a lower electrode and an upper electrode that are apart from each other and first and second two-dimensional material layers that are arranged between the lower electrode and the upper electrode and stacked without a chemical bond therebetween.
    Type: Grant
    Filed: March 19, 2020
    Date of Patent: June 28, 2022
    Assignees: Samsung Electronics Co., Ltd., President and Fellows of Harvard College
    Inventors: Minhyun Lee, Dovran Amanov, Renjing Xu, Houk Jang, Haeryong Kim, Hyeonjin Shin, Yeonchoo Cho, Donhee Ham
  • MEMRISTOR AND NEUROMORPHIC DEVICE COMPRISING THE SAME
    Publication number: 20200395540
    Abstract: Provided are memristors and neuromorphic devices including the memristors. A memristor includes a lower electrode and an upper electrode that are apart from each other and first and second two-dimensional material layers that are arranged between the lower electrode and the upper electrode and stacked without a chemical bond therebetween.
    Type: Application
    Filed: March 19, 2020
    Publication date: December 17, 2020
    Applicants: Samsung Electronics Co., Ltd., President and Fellows Of Harvard College
    Inventors: Minhyun LEE, Dovran AMANOV, Renjing XU, Houk JANG, Haeryong KIM, Hyeonjin SHIN, Yeonchoo CHO, Donhee HAM