Patents by Inventor Doyle Craig Capell

Doyle Craig Capell has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Low loss electronic devices having increased doping for reduced resistance and methods of forming the same
    Patent number: 10181532
    Abstract: An electronic device includes a drift region having a first conductivity type and a grid including a plurality of doped regions formed in the drift region and having a second conductivity type. The doped regions have a dopant concentration greater than 2.2×1019 cm?3. Related methods are also disclosed.
    Type: Grant
    Filed: March 15, 2013
    Date of Patent: January 15, 2019
    Assignee: Cree, Inc.
    Inventors: Mrinal Kanti Das, Doyle Craig Capell
  • Field effect transistor devices with low source resistance
    Patent number: 9142662
    Abstract: A semiconductor device includes a drift layer having a first conductivity type, a well region in the drift layer having a second conductivity type opposite the first conductivity type, and a source region in the well region, The source region has the first conductivity type and defines a channel region in the well region. The source region includes a lateral source region adjacent the channel region and a plurality of source contact regions extending away from the lateral source region opposite the channel region. A body contact region having the second conductivity type is between at least two of the plurality of source contact regions and is in contact with the well region. A source ohmic contact overlaps at least one of the source contact regions and the body contact region. A minimum dimension of a source contact area of the semiconductor device is defined by an area of overlap between the source ohmic contact and the at least one source contact region.
    Type: Grant
    Filed: May 16, 2011
    Date of Patent: September 22, 2015
    Assignee: Cree, Inc.
    Inventors: Sei-Hyung Ryu, Doyle Craig Capell, Lin Cheng, Sarit Dhar, Charlotte Jonas, Anant Agarwal, John Palmour
  • Field effect transistor devices with low source resistance
    Patent number: 9029945
    Abstract: A semiconductor device includes a drift layer having a first conductivity type, a well region in the drift layer having a second conductivity type opposite the first conductivity type, and a source region in the well region. The source region has the first conductivity type and defines a channel region in the well region. The source region includes a lateral source region adjacent the channel region and a plurality of source contact regions extending away from the lateral source region opposite the channel region. A body contact region having the second conductivity type is between at least two of the plurality of source contact regions and is in contact with the well region. A source ohmic contact overlaps at least one of the source contact regions and the body contact region. A minimum dimension of a source contact area of the semiconductor device is defined by an area of overlap between the source ohmic contact and the at least one source contact region.
    Type: Grant
    Filed: May 6, 2011
    Date of Patent: May 12, 2015
    Assignee: Cree, Inc.
    Inventors: Sei-Hyung Ryu, Doyle Craig Capell, Lin Cheng, Sarit Dhar, Charlotte Jonas, Anant Agarwal, John Palmour
  • Stable power devices on low-angle off-cut silicon carbide crystals
    Patent number: 8536582
    Abstract: A silicon carbide-based power device includes a silicon carbide drift layer having a planar surface that forms an off-axis angle with a <0001> direction of less than 8°.
    Type: Grant
    Filed: November 20, 2009
    Date of Patent: September 17, 2013
    Assignee: Cree, Inc.
    Inventors: Qingchun Zhang, Anant Agarwal, Doyle Craig Capell, Albert Burk, Joseph Sumakeris, Michael O'Loughlin
  • Field Effect Transistor Devices with Low Source Resistance
    Publication number: 20120280252
    Abstract: A semiconductor device includes a drift layer having a first conductivity type, a well region in the drift layer having a second conductivity type opposite the first conductivity type, and a source region in the well region, The source region has the first conductivity type and defines a channel region in the well region. The source region includes a lateral source region adjacent the channel region and a plurality of source contact regions extending away from the lateral source region opposite the channel region. A body contact region having the second conductivity type is between at least two of the plurality of source contact regions and is in contact with the well region. A source ohmic contact overlaps at least one of the source contact regions and the body contact region. A minimum dimension of a source contact area of the semiconductor device is defined by an area of overlap between the source ohmic contact and the at least one source contact region.
    Type: Application
    Filed: May 6, 2011
    Publication date: November 8, 2012
    Inventors: Sei-Hyung Ryu, Doyle Craig Capell, Lin Cheng, Sarit Dhar, Charlotte Jonas, Anant Agarwal, John Palmour
  • Field Effect Transistor Devices with Low Source Resistance
    Publication number: 20120280270
    Abstract: A semiconductor device includes a drift layer having a first conductivity type, a well region in the drift layer having a second conductivity type opposite the first conductivity type, and a source region in the well region, The source region has the first conductivity type and defines a channel region in the well region. The source region includes a lateral source region adjacent the channel region and a plurality of source contact regions extending away from the lateral source region opposite the channel region. A body contact region having the second conductivity type is between at least two of the plurality of source contact regions and is in contact with the well region. A source ohmic contact overlaps at least one of the source contact regions and the body contact region. A minimum dimension of a source contact area of the semiconductor device is defined by an area of overlap between the source ohmic contact and the at least one source contact region.
    Type: Application
    Filed: May 16, 2011
    Publication date: November 8, 2012
    Inventors: Sei-Hyung Ryu, Doyle Craig Capell, Lin Cheng, Sarit Dhar, Charlotte Jonas, Anant Agarwal, John Palmour
  • STABLE POWER DEVICES ON LOW-ANGLE OFF-CUT SILICON CARBIDE CRYSTALS
    Publication number: 20100133550
    Abstract: A silicon carbide-based power device includes a silicon carbide drift layer having a planar surface that forms an off-axis angle with a <0001> direction of less than 8°.
    Type: Application
    Filed: November 20, 2009
    Publication date: June 3, 2010
    Inventors: Qingchun Zhang, Anant Agarwal, Doyle Craig Capell, Albert Burk, Joseph Sumakeris, Michael O'Loughlin