Abstract: Techniques to update a trim parameter in non-volatile memory during either a manufacturing stage or a post-manufacturing stage are described. Trim parameters may be stored in a register located within the memory device that is inaccessible by a host device during a normal mode of operation. Post-manufacturing updates to trim parameters by the host device may be feasible by creating registers located within the memory device that are accessible to the host device to provide information regarding trim parameter setting updates. The memory device may read the information from the registers accessible to the host device to update trim parameters stored in the register inaccessible by the host device. In this manner, the host device may not have a direct access to the trim parameters but still be able to provide an update to the trim parameters by updating an entry of the registers accessible by the host device.

Abstract: Techniques to update a trim parameter in non-volatile memory during either a manufacturing stage or a post-manufacturing stage are described. Trim parameters may be stored in a register located within the memory device that is inaccessible by a host device during a normal mode of operation. Post-manufacturing updates to trim parameters by the host device may be feasible by creating registers located within the memory device that are accessible to the host device to provide information regarding trim parameter setting updates. The memory device may read the information from the registers accessible to the host device to update trim parameters stored in the register inaccessible by the host device. In this manner, the host device may not have a direct access to the trim parameters but still be able to provide an update to the trim parameters by updating an entry of the registers accessible by the host device.

Abstract: Techniques to update a trim parameter in non-volatile memory during either a manufacturing stage or a post-manufacturing stage are described. Trim parameters may be stored in a register located within the memory device that is inaccessible by a host device during a normal mode of operation. Post-manufacturing updates to trim parameters by the host device may be feasible by creating registers located within the memory device that are accessible to the host device to provide information regarding trim parameter setting updates. The memory device may read the information from the registers accessible to the host device to update trim parameters stored in the register inaccessible by the host device. In this manner, the host device may not have a direct access to the trim parameters but still be able to provide an update to the trim parameters by updating an entry of the registers accessible by the host device.

Abstract: Techniques to update a trim parameter in non-volatile memory during either a manufacturing stage or a post-manufacturing stage are described. Trim parameters may be stored in a register located within the memory device that is inaccessible by a host device during a normal mode of operation. Post-manufacturing updates to trim parameters by the host device may be feasible by creating registers located within the memory device that are accessible to the host device to provide information regarding trim parameter setting updates. The memory device may read the information from the registers accessible to the host device to update trim parameters stored in the register inaccessible by the host device. In this manner, the host device may not have a direct access to the trim parameters but still be able to provide an update to the trim parameters by updating an entry of the registers accessible by the host device.

Abstract: Techniques to update a trim parameter in non-volatile memory during either a manufacturing stage or a post-manufacturing stage are described. Trim parameters may be stored in a register located within the memory device that is inaccessible by a host device during a normal mode of operation. Post-manufacturing updates to trim parameters by the host device may be feasible by creating registers located within the memory device that are accessible to the host device to provide information regarding trim parameter setting updates. The memory device may read the information from the registers accessible to the host device to update trim parameters stored in the register inaccessible by the host device. In this manner, the host device may not have a direct access to the trim parameters but still be able to provide an update to the trim parameters by updating an entry of the registers accessible by the host device.

Abstract: Techniques to update a trim parameter in non-volatile memory during either a manufacturing stage or a post-manufacturing stage are described. Trim parameters may be stored in a register located within the memory device that is inaccessible by a host device during a normal mode of operation. Post-manufacturing updates to trim parameters by the host device may be feasible by creating registers located within the memory device that are accessible to the host device to provide information regarding trim parameter setting updates. The memory device may read the information from the registers accessible to the host device to update trim parameters stored in the register inaccessible by the host device. In this manner, the host device may not have a direct access to the trim parameters but still be able to provide an update to the trim parameters by updating an entry of the registers accessible by the host device.

Abstract: Data protection across multiple memory blocks can include writing a first portion of a codeword in a first location of a first memory block and writing a second portion of the codeword in a second location of a second memory block. The second location of the second memory block can be different than the first location of the first memory block.

Abstract: Data protection across multiple memory blocks can include writing a first portion of a codeword in a first location of a first memory block and writing a second portion of the codeword in a second location of a second memory block. The second location can be different than the first location with respect to the second and the first memory blocks.

Abstract: Data protection across multiple memory blocks can include writing a first portion of a codeword in a first memory block and writing a second portion of the codeword in a second memory block. The first memory block and the second memory block can be different memory blocks. The first portion of the codeword can be written in a different location in the first memory block than the second portion of the codeword is written in the second memory block.

Abstract: Data protection across multiple memory blocks can include writing a first portion of a codeword in a first location of a first memory block and writing a second portion of the codeword in a second location of a second memory block. The second location can be different than the first location with respect to the second and the first memory blocks.