Abstract: Provided herein may be a semiconductor device and a method of manufacturing the same. The method may include forming a second preliminary stack on a first preliminary stack; forming a first hard mask layer on the second preliminary stack; etching the first hard mask layer and forming holes through which the second preliminary stack is exposed; forming a second hard mask layer on the first hard mask layer to fill the holes; forming a linear trench by etching the second hard mask layer; forming a waved select line separation mask pattern by etching the exposed first hard mask layer; forming a select line separation trench by etching the exposed second preliminary stack using the select line separation mask pattern as an etching mask; and forming a select line separation layer by filling the select line separation trench with a non-conductor.

Abstract: A method of manufacturing a three-dimensional semiconductor device, the method comprising: forming a stack structure; patterning channel holes using light transmission holes of an exposure mask; forming cell plugs penetrating the stack structure; and patterning wave-type slits using light transmission holes of the exposure mask, wherein the step of patterning holes further includes sequentially stacking a first mask layer and a first photoresist layer on the stack structure, and exposing the first photoresist layer by light transmitted through the exposure mask.

Abstract: A method of providing at least one recommended item with respect to a first question of a questioner, the method including: receiving the first question from a terminal of the questioner; determining a first question and answer set corresponding to the first question, based on question similarity; determining, as a second question and answer set, a most recent question and answer set belonging to a directory corresponding to the first question; determining at least one recommended answerer corresponding to the first question, based on expertise; and providing, to the terminal of the questioner, at least one of the first question and answer set, the second question and answer set, and the at least one recommended answerer, wherein the first question and answer set and the second question and answer set each include at least one question and at least one answer.

Abstract: Provided herein may be a semiconductor device and a method of manufacturing the same. The method may include forming a second preliminary stack on a first preliminary stack; forming a first hard mask layer on the second preliminary stack; etching the first hard mask layer and forming holes through which the second preliminary stack is exposed; forming a second hard mask layer on the first hard mask layer to fill the holes; forming a linear trench by etching the second hard mask layer; forming a waved select line separation mask pattern by etching the exposed first hard mask layer; forming a select line separation trench by etching the exposed second preliminary stack using the select line separation mask pattern as an etching mask; and forming a select line separation layer by filling the select line separation trench with a non-conductor.

Abstract: Provided herein may be a semiconductor device and a method of manufacturing the same. The method may include forming a second preliminary stack on a first preliminary stack; forming a first hard mask layer on the second preliminary stack; etching the first hard mask layer and forming holes through which the second preliminary stack is exposed; forming a second hard mask layer on the first hard mask layer to fill the holes; forming a linear trench by etching the second hard mask layer; forming a waved select line separation mask pattern by etching the exposed first hard mask layer; forming a select line separation trench by etching the exposed second preliminary stack using the select line separation mask pattern as an etching mask; and forming a select line separation layer by filling the select line separation trench with a non-conductor.

Abstract: A semiconductor device and a method of manufacturing a semiconductor device may be provided. The semiconductor device may include first channel layers arranged in a first direction. The semiconductor device may include second channel layers adjacent to the first channel layers in a second direction crossing the first direction and arranged in the first direction. The semiconductor device may include insulating layers stacked while surrounding side walls of the first and second channel layers. The semiconductor device may include conductive layers interposed between the insulating layers, and including first metal patterns extended in the first direction and second metal patterns extended in the first direction while surrounding the side walls of the first channel layers.

Abstract: Provided is a method of providing a plurality of pieces of data related to at least one of a plurality of pieces of content released through or generated from an event, the method including: collecting the plurality of pieces of data related to at least one of the plurality of pieces of content from at least one source; classifying the plurality of pieces of data based on which data is related to which content; and determining an order of the plurality of pieces of content and providing the classified plurality of pieces of data according to the determined order.

Abstract: In a method of manufacturing a semiconductor device, a wave-type slit is formed a wave-type slit in a stack structure, using an exposure mask including light transmission holes.

Abstract: An apparatus and method for controlling network access are provided.

Abstract: Provided herein may be a semiconductor device and a method of manufacturing the same. The method may include forming a second preliminary stack on a first preliminary stack; forming a first hard mask layer on the second preliminary stack; etching the first hard mask layer and forming holes through which the second preliminary stack is exposed; forming a second hard mask layer on the first hard mask layer to fill the holes; forming a linear trench by etching the second hard mask layer; forming a waved select line separation mask pattern by etching the exposed first hard mask layer; forming a select line separation trench by etching the exposed second preliminary stack using the select line separation mask pattern as an etching mask; and forming a select line separation layer by filling the select line separation trench with a non-conductor.

Abstract: A semiconductor device and a method of manufacturing a semiconductor device may be provided. The semiconductor device may include first channel layers arranged in a first direction. The semiconductor device may include second channel layers adjacent to the first channel layers in a second direction crossing the first direction and arranged in the first direction. The semiconductor device may include insulating layers stacked while surrounding side walls of the first and second channel layers. The semiconductor device may include conductive layers interposed between the insulating layers, and including first metal patterns extended in the first direction and second metal patterns extended in the first direction while surrounding the side walls of the first channel layers.

Abstract: A semiconductor device may be provided. The semiconductor device may include conductive patterns surrounding a channel film. The conductive patterns may be stacked and spaced apart from one another. The semiconductor device may include a gate contact plug coupled to one of the conductive patterns. The semiconductor device may include support pillars penetrating the conductive patterns in a periphery of the gate contact plug.

Abstract: A semiconductor device and a method of manufacturing a semiconductor device may be provided. The semiconductor device may include first channel layers arranged in a first direction. The semiconductor device may include second channel layers adjacent to the first channel layers in a second direction crossing the first direction and arranged in the first direction. The semiconductor device may include insulating layers stacked while surrounding side walls of the first and second channel layers. The semiconductor device may include conductive layers interposed between the insulating layers, and including first metal patterns extended in the first direction and second metal patterns extended in the first direction while surrounding the side walls of the first channel layers.

Abstract: A semiconductor device may be provided. The semiconductor device may include conductive patterns surrounding a channel film. The conductive patterns may be stacked and spaced apart from one another. The semiconductor device may include a gate contact plug coupled to one of the conductive patterns. The semiconductor device may include support pillars penetrating the conductive patterns in a periphery of the gate contact plug.

Abstract: Provided is a search service providing method of providing search results related to a search word performed by a search service providing device, the search service providing method comprising: receiving, by the search service providing device, an initial search word; determining, by the search service providing device, one or more additional search words based on the initial search word; ranking, by the search service providing device, the one or more additional search words; selecting, by the search service providing device, at least one related search word from among the one or more additional search words based on the ranking; and providing, by the search service providing device, additional search results corresponding to the at least one related search word, the initial search word, an initial search result corresponding to the initial search word, and the one or more additional search words.

Abstract: A method of forming fine patterns includes forming a partition on a base layer. The partition includes a partition block, a first open region provided to face the partition block, and first lines extending from the partition block to the first open region. A spacer is formed on sidewalls of the partition to define a second open region overlapping with the first open region and to include second lines on sidewalls of the first lines. The partition may be removed to open a third open region occupied by the partition block and spaces between the second lines. A target pattern is formed to include third lines filling the spaces between the second lines, a first pad block filling the second open region, and a second pad block filling the third open region. Each of the first and second pad blocks is separated into a plurality of pads.

Abstract: A semiconductor device and a method of manufacturing a semiconductor device may be provided. The semiconductor device may include first channel layers arranged in a first direction. The semiconductor device may include second channel layers adjacent to the first channel layers in a second direction crossing the first direction and arranged in the first direction. The semiconductor device may include insulating layers stacked while surrounding side walls of the first and second channel layers. The semiconductor device may include conductive layers interposed between the insulating layers, and including first metal patterns extended in the first direction and second metal patterns extended in the first direction while surrounding the side walls of the first channel layers.

Abstract: Disclosed is a method for estimating the maximum power of a battery, which can inexpensively perform an estimation of the maximum power of a battery in a relatively simple manner of using the internal resistance of the battery, which has a correlation with and a largest effect on the maximum power of the battery. The method includes the steps of: measuring an internal resistance and a temperature of the battery and estimating a state of charge, if an estimation of the maximum power of the battery is requested; and reading a value of the maximum power of the battery, which corresponds to the measured temperature, the estimated state of charge, and the measured internal resistance, from a table in which the internal resistances and the maximum powers of the battery are mapped according to the temperatures and states of charge.

Abstract: A method of forming fine patterns includes forming a partition on a base layer. The partition includes a partition block, a first open region provided to face the partition block, and first lines extending from the partition block to the first open region. A spacer is formed on sidewalls of the partition to define a second open region overlapping with the first open region and to include second lines on sidewalls of the first lines. The partition may be removed to open a third open region occupied by the partition block and spaces between the second lines. A target pattern is formed to include third lines filling the spaces between the second lines, a first pad block filing the second open region, and a second pad block filing the third open region. Each of the first and second pad blocks is separated into a plurality of pads.

Abstract: Provided is a method of providing a plurality of pieces of data related to at least one of a plurality of pieces of content released through or generated from an event, the method including: collecting the plurality of pieces of data related to at least one of the plurality of pieces of content from at least one source; classifying the plurality of pieces of data based on which data is related to which content; and determining an order of the plurality of pieces of content and providing the classified plurality of pieces of data according to the determined order.