Patents by Inventor Dragan Podlesnik

Dragan Podlesnik has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8983631
    Abstract: A process-level troubleshooting architecture (PLTA) configured to facilitate substrate processing in a plasma processing system is provided. The architecture includes a process module controller. The architecture also includes a plurality of sensors, wherein each sensor of the plurality of sensors communicates with the process module controller to collect sensed data about one or more process parameters. The architecture further includes a process-module-level analysis server, wherein the process-module-level analysis server communicates directly with the plurality of sensors and the process module controller. The process-module-level analysis server is configured for receiving data, wherein the data include at least one of the sensed data from the plurality of sensors and process module and chamber data from the process module controller.
    Type: Grant
    Filed: September 8, 2009
    Date of Patent: March 17, 2015
    Assignee: Lam Research Corporation
    Inventors: Chung Ho Huang, Vijayakumar C. Venugopal, Connie Lam, Dragan Podlesnik
  • Patent number: 8828145
    Abstract: Apparatus and methods for removing particle contaminants from a surface of a substrate includes coating a layer of a viscoelastic material on the surface. The viscoelastic material is coated as a thin film and exhibits substantial liquid-like characteristic. An external force is applied to a first area of the surface coated with the viscoelastic material such that a second area of the surface coated with the viscoelastic material is not substantially subjected to the applied force. The force is applied for a time duration that is shorter than a intrinsic time of the viscoelastic material so as to access solid-like characteristic of the viscoelastic material. The viscoelastic material exhibiting solid-like characteristic interacts at least partially with at least some of the particle contaminants present on the surface.
    Type: Grant
    Filed: March 10, 2009
    Date of Patent: September 9, 2014
    Assignee: Lam Research Corporation
    Inventors: Yizhak Sabba, Seokmin Yun, Mark Kawaguchi, Mark Wilcoxson, Dragan Podlesnik
  • Publication number: 20140116476
    Abstract: Systems for removing post etch polymer residue from etched surface includes a first proximity head to introduce a first cleaning chemistry as a first meniscus to a portion of the surface of the substrate so as to cover a length that extends to at least a diameter of the substrate and a first width that is less than the diameter of the substrate. A second proximity head is configured to introduce a second cleaning chemistry as a second meniscus to the portion so as to cover the length that extends to the diameter and a second width that is less than the diameter of the substrate. A substrate supporting device equipped with a motor coupled to a computing system is used to move the substrate supporting device under the first proximity head at a first linear speed and under the second proximity head at a second linear speed.
    Type: Application
    Filed: December 31, 2013
    Publication date: May 1, 2014
    Applicant: Lam Research Corporation
    Inventors: Katrina Mikhaylichenko, Yizhak Sabba, Dragan Podlesnik
  • Patent number: 8652266
    Abstract: A system and method for removing polymer residue from around a metal gate structure formed on a surface of a substrate during a post-etch cleaning operation includes determining a plurality of process parameters associated with the metal gate structure and the polymer residue to be removed. A plurality of fabrication layers define the metal gate structure and the process parameters define characteristics of the fabrication layers and the polymer residue. A first cleaning chemistry and second cleaning chemistry are identified and a plurality of application parameters associated with the first and second cleaning chemistries are defined based on the process parameters. The first and second application chemistries are applied sequentially in a controlled manner using the application parameters to substantial remove the polymer residue while preserving the structural integrity of the gate structure.
    Type: Grant
    Filed: September 17, 2008
    Date of Patent: February 18, 2014
    Assignee: Lam Research Corporation
    Inventors: Katrina Mikhaylichenko, Yizhak Sabba, Dragan Podlesnik
  • Patent number: 8226775
    Abstract: The embodiments of the present invention provide methods for cleaning patterned substrates with fine features. The methods for cleaning patterned substrate have advantages in cleaning patterned substrates with fine features without substantially damaging the features by using the cleaning materials described. The cleaning materials are fluid, either in liquid phase, or in liquid/gas phase, and deform around device features; therefore, the cleaning materials do not substantially damage the device features or reduce damage all together. The cleaning materials containing polymers of a polymeric compound with large molecular weight capture the contaminants on the substrate. In addition, the cleaning materials entrap the contaminants and do not return the contaminants to the substrate surface. The polymers of one or more polymeric compounds with large molecular weight form long polymer chains, which can also be cross-linked to form a network (or polymeric network).
    Type: Grant
    Filed: June 2, 2008
    Date of Patent: July 24, 2012
    Assignee: Lam Research Corporation
    Inventors: David S. L. Mui, Satish Srinivasan, Grant Peng, Ji Zhu, Shih-Chung Kon, Dragan Podlesnik, Arjun Mendiratta
  • Patent number: 8211846
    Abstract: The embodiments of the present invention provide improved materials for cleaning patterned substrates with fine features. The cleaning materials have advantages in cleaning patterned substrates with fine features without substantially damaging the features. The cleaning materials are fluid, either in liquid phase, or in liquid/gas phase, and deform around device features; therefore, the cleaning materials do not substantially damage the device features or reduce damage all together. The cleaning materials containing polymers of a polymeric compound with large molecular weight capture the contaminants on the substrate. In addition, the cleaning materials entrap the contaminants and do not return the contaminants to the substrate surface. The polymers of one or more polymeric compounds with large molecular weight form long polymer chains, which can also be cross-linked to form a network (or polymeric network).
    Type: Grant
    Filed: June 2, 2008
    Date of Patent: July 3, 2012
    Assignee: Lam Research Group
    Inventors: David S. L. Mui, Satish Srinivasan, Grant Peng, Ji Zhu, Shih-Chung Kon, Dragan Podlesnik, Arjun Mendiratta
  • Publication number: 20120132234
    Abstract: A cleaning system for removing contaminants on a surface of a patterned substrate for defining integrated circuit devices is provided. The system includes a substrate carrier for supporting edges of the patterned substrate, and a cleaning head positioned over the patterned substrate. The cleaning head includes a plurality of dispensing holes to dispense a cleaning material on the surface the patterned substrate for defining integrated circuit devices, wherein the cleaning material includes polymers of a polymeric compound. The cleaning head is coupled to a storage of the cleaning material, which is coupled to the cleaning material preparation system. A support structure holds the cleaning head in proximity to the surface of the patterned substrate.
    Type: Application
    Filed: December 1, 2011
    Publication date: May 31, 2012
    Inventors: David S.L. Mui, Satish Srinivasan, Grant Peng, Ji Zhu, Shih-Chung Kon, Dragan Podlesnik, Arjun Mendiratta
  • Patent number: 8084406
    Abstract: The embodiments of the present invention provide apparatus for cleaning patterned substrates with fine features with cleaning materials. The apparatus using the cleaning materials has advantages in cleaning patterned substrates with fine features without substantially damaging the features. The cleaning materials are fluid, either in liquid phase, or in liquid/gas phase, and deform around device features; therefore, the cleaning materials do not substantially damage the device features or reduce damage all together. The cleaning materials containing polymers of a polymeric compound with large molecular weight capture the contaminants on the substrate. In addition, the cleaning materials entrap the contaminants and do not return the contaminants to the substrate surface. The polymers of one or more polymeric compounds with large molecular weight form long polymer chains, which can also be cross-linked to form a network (or polymeric network).
    Type: Grant
    Filed: June 2, 2008
    Date of Patent: December 27, 2011
    Assignee: Lam Research Corporation
    Inventors: David S. L. Mui, Satish Srinivasan, Grant Peng, Ji Zhu, Shih-Chung Kon, Dragan Podlesnik, Arjun Mendiratta
  • Publication number: 20100332012
    Abstract: A process-level troubleshooting architecture (PLTA) configured to facilitate substrate processing in a plasma processing system is provided. The architecture includes a process module controller. The architecture also includes a plurality of sensors, wherein each sensor of the plurality of sensors communicates with the process module controller to collect sensed data about one or more process parameters. The architecture further includes a process-module-level analysis server, wherein the process-module-level analysis server communicates directly with the plurality of sensors and the process module controller. The process-module-level analysis server is configured for receiving data, wherein the data include at least one of the sensed data from the plurality of sensors and process module and chamber data from the process module controller.
    Type: Application
    Filed: September 8, 2009
    Publication date: December 30, 2010
    Inventors: Chung-Ho Huang, Vijayakumar C. Venugopal, Connie Lam, Dragan Podlesnik
  • Publication number: 20100229890
    Abstract: Apparatus and methods for removing particle contaminants from a surface of a substrate includes coating a layer of a viscoelastic material on the surface. The viscoelastic material is coated as a thin film and exhibits substantial liquid-like characteristic. An external force is applied to a first area of the surface coated with the viscoelastic material such that a second area of the surface coated with the viscoelastic material is not substantially subjected to the applied force. The force is applied for a time duration that is shorter than a intrinsic time of the viscoelastic material so as to access solid-like characteristic of the viscoelastic material. The viscoelastic material exhibiting solid-like characteristic interacts at least partially with at least some of the particle contaminants present on the surface.
    Type: Application
    Filed: March 10, 2009
    Publication date: September 16, 2010
    Applicant: Lam Research Corp.
    Inventors: Yizhak T. Sabba, Seokmin Yun, Mark Kawaguchi, Mark Wilcoxson, Dragan Podlesnik
  • Publication number: 20100018553
    Abstract: A system and method for removing polymer residue from around a metal gate structure formed on a surface of a substrate during a post-etch cleaning operation includes determining a plurality of process parameters associated with the metal gate structure and the polymer residue to be removed. A plurality of fabrication layers define the metal gate structure and the process parameters define characteristics of the fabrication layers and the polymer residue. A first cleaning chemistry and second cleaning chemistry are identified and a plurality of application parameters associated with the first and second cleaning chemistries are defined based on the process parameters. The first and second application chemistries are applied sequentially in a controlled manner using the application parameters to substantial remove the polymer residue while preserving the structural integrity of the gate structure.
    Type: Application
    Filed: September 17, 2008
    Publication date: January 28, 2010
    Applicant: LAM RESEARCH CORPORATION
    Inventors: Katrina Mikhaylichenko, Yizhak Sabba, Dragan Podlesnik
  • Publication number: 20090151752
    Abstract: The embodiments of the present invention provide methods for cleaning patterned substrates with fine features. The methods for cleaning patterned substrate have advantages in cleaning patterned substrates with fine features without substantially damaging the features by using the cleaning materials described. The cleaning materials are fluid, either in liquid phase, or in liquid/gas phase, and deform around device features; therefore, the cleaning materials do not substantially damage the device features or reduce damage all together. The cleaning materials containing polymers of a polymeric compound with large molecular weight capture the contaminants on the substrate. In addition, the cleaning materials entrap the contaminants and do not return the contaminants to the substrate surface. The polymers of one or more polymeric compounds with large molecular weight form long polymer chains, which can also be cross-linked to form a network (or polymeric network).
    Type: Application
    Filed: June 2, 2008
    Publication date: June 18, 2009
    Inventors: David S.L. Mui, Satish Srinivasan, Grant Peng, Ji Zhu, Shih-Chung Kon, Dragan Podlesnik, Arjun Mendiratta
  • Publication number: 20090156452
    Abstract: The embodiments of the present invention provide improved materials for cleaning patterned substrates with fine features. The cleaning materials have advantages in cleaning patterned substrates with fine features without substantially damaging the features. The cleaning materials are fluid, either in liquid phase, or in liquid/gas phase, and deform around device features; therefore, the cleaning materials do not substantially damage the device features or reduce damage all together. The cleaning materials containing polymers of a polymeric compound with large molecular weight capture the contaminants on the substrate. In addition, the cleaning materials entrap the contaminants and do not return the contaminants to the substrate surface. The polymers of one or more polymeric compounds with large molecular weight form long polymer chains, which can also be cross-linked to form a network (or polymeric network).
    Type: Application
    Filed: June 2, 2008
    Publication date: June 18, 2009
    Inventors: David S.L. Mui, Satish Srinivasan, Grant Peng, Ji Zhu, Shih-Chung Kon, Dragan Podlesnik, Arjun Mendiratta
  • Publication number: 20090151757
    Abstract: The embodiments of the present invention provide apparatus for cleaning patterned substrates with fine features with cleaning materials. The apparatus using the cleaning materials has advantages in cleaning patterned substrates with fine features without substantially damaging the features. The cleaning materials are fluid, either in liquid phase, or in liquid/gas phase, and deform around device features; therefore, the cleaning materials do not substantially damage the device features or reduce damage all together. The cleaning materials containing polymers of a polymeric compound with large molecular weight capture the contaminants on the substrate. In addition, the cleaning materials entrap the contaminants and do not return the contaminants to the substrate surface. The polymers of one or more polymeric compounds with large molecular weight form long polymer chains, which can also be cross-linked to form a network (or polymeric network).
    Type: Application
    Filed: June 2, 2008
    Publication date: June 18, 2009
    Inventors: David S. L. Mui, Satish Srinivasan, Grant Peng, Ji Zhu, Shih-Chung Kon, Dragan Podlesnik, Arjun Mendiratta
  • Publication number: 20070020937
    Abstract: A method and apparatus for selectively controlling a plasma in a processing chamber during wafer processing. The method includes providing process gasses into the chamber over a wafer to be processed, and providing high frequency RF power to a plasma generating element and igniting the process gases into the plasma. Modulated RF power is coupled to a biasing element, and wafer processing is performed according to a particular processing recipe. The apparatus includes a biasing element disposed in the chamber and adapted to support a wafer, and a plasma generating element disposed over the biasing element and wafer. A first power source is coupled to the plasma generating element, and a second power source is coupled to the biasing element. A third power source is coupled to the biasing element, wherein the second and third power sources provide a modulated signal to the biasing element.
    Type: Application
    Filed: August 9, 2006
    Publication date: January 25, 2007
    Inventors: Jin-Yuan Chen, Frank Hooshdaran, Dragan Podlesnik
  • Publication number: 20060175015
    Abstract: A method and apparatus for selectively controlling a plasma in a processing chamber during wafer processing. The method includes providing process gasses into the chamber over a wafer to be processed, and providing high frequency RF power to a plasma generating element and igniting the process gases into the plasma. Modulated RF power is coupled to a biasing element, and wafer processing is performed according to a particular processing recipe. The apparatus includes a biasing element disposed in the chamber and adapted to support a wafer, and a plasma generating element disposed over the biasing element and wafer. A first power source is coupled to the plasma generating element, and a second power source is coupled to the biasing element. A third power source is coupled to the biasing element, wherein the second and third power sources provide a modulated signal to the biasing element.
    Type: Application
    Filed: March 14, 2006
    Publication date: August 10, 2006
    Inventors: Jin-Yuan Chen, Frank Hooshdaran, Dragan Podlesnik
  • Patent number: 6897155
    Abstract: A method for operating a plasma reactor to etch high-aspect-ratio features on a workpiece in a vacuum chamber. The method comprises the performance of an etch process followed by a flash process. During the etch process, a first gas is supplied into the vacuum chamber, and a plasma of the first gas is maintained for a first period of time. The plasma of the first gas comprises etchant and passivant species. During the flash process, a second gas comprising a deposit removal gas is supplied into the vacuum chamber, and a plasma of the second gas is maintained for a second period of time. The DC voltage between the workpiece and the plasma of the second gas during the second period of time is significantly less than the DC voltage between the workpiece and the plasma of the first gas during the first period of time.
    Type: Grant
    Filed: August 14, 2002
    Date of Patent: May 24, 2005
    Assignee: Applied Materials, Inc.
    Inventors: Ajay Kumar, Anisul H. Khan, Dragan Podlesnik, Sharma V. Pamarthy, Axel Henke, Stephan Wege, Virinder Grewal
  • Patent number: 6827869
    Abstract: The present disclosure pertains to our discovery of a particularly efficient method for etching a multi-part cavity in a substrate. The method provides for first etching a shaped opening, depositing a protective layer over at least a portion of the inner surface of the shaped opening, and then etching a shaped cavity directly beneath and in continuous communication with the shaped opening. The protective layer protects the etch profile of the shaped opening during etching of the shaped cavity, so that the shaped opening and the shaped cavity can be etched to have different shapes, if desired. In particular embodiments of the method of the invention, lateral etch barrier layers and/or implanted etch stops are also used to direct the etching process. The method of the invention can be applied to any application where it is necessary or desirable to provide a shaped opening and an underlying shaped cavity having varying shapes.
    Type: Grant
    Filed: July 11, 2002
    Date of Patent: December 7, 2004
    Inventors: Dragan Podlesnik, Thorsten Lill, Jeff Chinn, Shaoher X. Pan, Anisul Khan, Maocheng Li, Yiqiong Wang
  • Patent number: 6808647
    Abstract: A method and apparatus for reducing the sensitivity of semiconductor processing to chamber conditions is provided. Process repeatability of common processes are affected by changing surface conditions which alter the recombination rates of processing chemicals to the chamber surfaces. In one aspect of the invention, a composition of one or more etchants is selected to optimize the etch performance and reduce deposition on chamber surfaces. The one or more etchants are selected to minimize buildup on the chamber surfaces, thereby controlling the chamber surface condition to minimize changes in etch rates due to differing recombination rates of free radicals with different surface conditions and achieve etch repeatability. In another embodiment, the etchant chemistry is adjusted to reduce the change to internal surface conditions after a cleaning cycle. In another embodiment, a process recipe is selected to reduce the sensitivity of the etch process to the chamber conditions.
    Type: Grant
    Filed: July 12, 1999
    Date of Patent: October 26, 2004
    Inventors: Songlin Xu, Zhiwen Sun, Dragan Podlesnik, Xueyu Qian
  • Patent number: 6802933
    Abstract: This invention is directed to a method for etching films on semiconductor substrates and cleaning etch chambers. The method includes an improved processing sequence and cleaning method where residue formed from processing a previous substrate are cleaned by the etching process used to remove an exposed layer of material from the present substrate. The process provides improved substrate throughput by combining the step to clean residue from a previous substrate with an etch step conducted on the present substrate. Applicants have found the method particularly useful in processing structures such as DRAM stacks, especially where the residue is formed by a trench etched in the previous silicon substrate and the exposed layer etched from the present substrate is silicon nitride.
    Type: Grant
    Filed: December 18, 2000
    Date of Patent: October 12, 2004
    Inventors: Anisul Khan, Ajay Kumar, Jeffrey D. Chinn, Dragan Podlesnik