Abstract: A semiconductor component, in particular a transistor. The semiconductor component includes: source and drain layers doped according to a first type, a channel layer located vertically between the source layer doped and the drain layer, and a gate trench, which extends vertically from the source layer to the drain layer and adjoins the channel layer and at least a portion of the source layer. A first shielding region doped according to a second type, extends vertically from the source layer, or a semiconductor surface adjoining it, to the drain layer, and a second shielding region doped according to the second type, is arranged vertically below a bottom of the gate trench, wherein the gate trench and the second shielding region are designed such that, in one or more delimited regions, the second shielding region extends horizontally at least to the first shielding region.

Abstract: A vertical power transistor having front and rear sides. The vertical power transistor includes a drift region that includes a first doping with a first charge carrier type, and a body region that includes a second doping with a second charge carrier type. The body region is situated on the drift region, and includes trenches that extend, starting from the front side, essentially perpendicularly into the drift region. First and second areas are situated between the trenches. The first areas are situated centrally between the trenches, and the second areas are situated between the first areas and the trenches. The first and second areas, starting from the body region, extend essentially perpendicularly into the drift region. The first areas include a third doping with the second charge carrier type, and the second areas include the first doping with the first charge carrier type.

Abstract: A vertical semiconductor component, in particular a vertical transistor. The component has a vertically lower drain electrode and a semiconductor layer structure arranged vertically above the drain electrode, the semiconductor layer structure having at least one drift layer and a trench-shaped conduction channel, wherein a vertically lower end region of the conduction channel adjoins the drift layer, and wherein a gate electrode is formed vertically above the conduction channel and the conduction channel is conductively connected to a source electrode. The conduction channel has, in an at least partially vertically extending wall portion, a gradation, which is delimited by an upper and a lower boundary surface of the conduction channel such that the wall portion has lateral outer and inner portions which are connected to one another via a lateral intermediate portion. The intermediate portion has a reduced cross-section compared with the outer and inner portions.

Abstract: A semiconductor component, in particular diode or transistor. The semiconductor component includes two electrodes configured vertically one above the other, a substrate (102) made of gallium nitride, and a shielding layer for forming a space charge zone for shielding of an electric field when the semiconductor component is connected in a blocking operation or reverse direction.