Abstract: A method and system for fantasy games comprises a computer system further comprising at least one processor, a graphical user interface, and a computer-usable medium embodying computer program code, the computer-usable medium capable of communicating with the at least one processor, the non-transitory computer program code comprising instructions executable by the at least one processor and configured for: defining a fantasy team, the fantasy team comprising multiple real world players selected from a single real world team, collecting sports data, assigning fantasy points to the fantasy team based on the sports data of the real world players selected from the single real world team, and summing the fantasy points for all the fantasy team into a fantasy score.

Abstract: A layered structure includes a substrate, a porous layer over the substrate, an epitaxial layer grown directly over the porous layer, and a semiconductor device in the epitaxial layer. The porous layer has a higher resistivity than the substrate. A porosity of the porous layer reduces radio frequency (RF) bleeding from the semiconductor device into the substrate.

Abstract: A layered structure for semiconductor application is described herein. The layered structure includes a starting material and a fully depleted porous layer formed over the starting material with high resistivity. In some embodiments, the layered structure further includes epitaxial layer grown over the fully depleted porous layer. Additionally, a process of making the layered structure including forming the fully depleted porous layer and epitaxial layer grown over the porous layer is described herein.

Abstract: Embodiments described herein provide a layered structure that comprises a substrate that includes a first porous multilayer of a first porosity, an active quantum well capping layer epitaxially grown over the first porous multilayer, and a second porous multilayer of the first porosity over the active quantum well capping layer, where the second porous multilayer aligns with the first porous multilayer.

Abstract: A layered structure for semiconductor application is described herein. The layered structure includes a starting material and a fully depleted porous layer formed over the starting material with high resistivity. In some embodiments, the layered structure further includes epitaxial layer grown over the fully depleted porous layer. Additionally, a process of making the layered structure including forming the fully depleted porous layer and epitaxial layer grown over the porous layer is described herein.

Abstract: In accordance with one embodiment, a method is provided that includes providing a liquid nitrogen storage system configured to cool a supply of liquid nitrogen to a temperature below the vapor point of liquid nitrogen; coupling a piping system with the liquid nitrogen storage system to convey a portion of the supply of liquid nitrogen from the liquid nitrogen storage system; coupling the piping system with a liquid nitrogen control valve configured to control a flow of liquid nitrogen to at least one liquid nitrogen dispensing head; disposing the at least one liquid nitrogen dispensing head above a conveyance device operable to convey an aggregate stream of a concrete batching plant during use; and disposing the at least one liquid nitrogen dispensing head in a position to dispense an output flow of liquid nitrogen onto the aggregate stream of the concrete batching plant during use.

Abstract: Embodiments described herein provide a layered structure that comprises a substrate that includes a first porous multilayer of a first porosity, an active quantum well capping layer epitaxially grown over the first porous multilayer, and a second porous multilayer of the first porosity over the active quantum well capping layer, where the second porous multilayer aligns with the first porous multilayer.