Abstract: Methods of manufacturing interconnect structures as part of a microelectronic device fabrication process are described. The methods include forming a dielectric layer including at least one feature defining a gap having sidewalls and a bottom on a substrate. The methods further include forming a blocking layer on the bottom by exposing the substrate to a blocking species that comprises a hydrocarbon and at least one additive; selectively depositing a barrier layer on the sidewalls; selectively depositing a metal liner on the barrier layer on the sidewalls; removing the blocking layer; and performing a gap fill process to fill the gap with a gapfill material.

Abstract: Methods for selectively depositing on metallic surfaces are disclosed. Some embodiments of the disclosure utilize a hydrocarbon having at least two functional groups selected from alkene, alkyne, ketone, hydroxyl, aldehyde, or combinations thereof to form a self-assembled monolayer (SAM) on metallic surfaces.

Abstract: Methods for selectively depositing on metallic surfaces are disclosed. Some embodiments of the disclosure utilize a hydrocarbon having at least two functional groups, at least one functional group selected from amino groups, hydroxyl groups, ether linkages or combinations thereof to form a self-assembled monolayer (SAM) on metallic surfaces.

Abstract: Methods of forming devices comprise forming a dielectric layer on a substrate, the dielectric layer comprising at least one feature defining a gap including sidewalls and a bottom. The methods include selectively depositing a self-assembled monolayer (SAM) on the bottom of the gap. The SAM comprises a hydrocarbon having a formula of H—C?C—R, wherein R is a linear alkyl chain or aryl group comprising from 1 to 20 carbon atoms or a formula of R?C?CR?, wherein R? and R? independently include a linear alkyl chain or aryl group comprising from 1 to 20 carbon atoms A barrier layer is formed on the SAM before selectively depositing a metal liner on the barrier layer. The SAM is removed after selectively depositing the metal liner on the barrier layer.

Abstract: Methods for selectively depositing on metallic surfaces are disclosed. Some embodiments of the disclosure utilize a hydrocarbon having at least two functional groups selected from alkene, alkyne, ketone, hydroxyl, aldehyde, or combinations thereof to form a self-assembled monolayer (SAM) on metallic surfaces.

Abstract: Methods for selectively depositing on metallic surfaces are disclosed. Some embodiments of the disclosure utilize a hydrocarbon having at least two functional groups, at least one functional group selected from amino groups, hydroxyl groups, ether linkages or combinations thereof to form a self-assembled monolayer (SAM) on metallic surfaces.

Abstract: A system including a non-transitory machine readable medium storing computer program instructions which, when executed by the processor, cause the system to: obtain directed event parameters defining a directed event, determine a plurality of secondary events and an occurrence sequence for the plurality of secondary events based on a plurality of event rules, issue one or more commands to trigger execution of such plurality of secondary events, monitor a completion status of the plurality of secondary events based on information obtained from the plurality of servers associated with the plurality of fund sources, and/or generate an interactive map providing a visual representation of a funding path, the funding path comprising the plurality of secondary events, the occurrence sequence for the plurality of secondary events, and a completion status of the plurality of secondary events.

Abstract: A system including a non-transitory machine readable medium storing computer program instructions which, when executed by the processor, cause the system to: obtain directed event parameters defining a directed event, determine a plurality of secondary events and an occurrence sequence for the plurality of secondary events based on a plurality of event rules, issue one or more commands to trigger execution of such plurality of secondary events, monitor a completion status of the plurality of secondary events based on information obtained from the plurality of servers associated with the plurality of fund sources, and/or generate an interactive map providing a visual representation of a funding path, the funding path comprising the plurality of secondary events, the occurrence sequence for the plurality of secondary events, and a completion status of the plurality of secondary events.

Abstract: A system including a non-transitory machine readable medium storing computer program instructions which, when executed by the processor, cause the system to: obtain directed event parameters defining a directed event, determine a plurality of secondary events and an occurrence sequence for the plurality of secondary events based on a plurality of event rules, issue one or more commands to trigger execution of such plurality of secondary events, monitor a completion status of the plurality of secondary events based on information obtained from the plurality of servers associated with the plurality of fund sources, and/or generate an interactive map providing a visual representation of a funding path, the funding path comprising the plurality of secondary events, the occurrence sequence for the plurality of secondary events, and a completion status of the plurality of secondary events.

Abstract: Described are methods of depositing a titanium aluminum nitride film on a substrate surface with a controlled amount of carbon. The methods include exposing a substrate surface to a titanium precursor, a nitrogen reactant and an aluminum precursor with purges of the unreacted titanium and aluminum precursors and unreacted nitrogen reactants between each exposure.

Abstract: Described are methods of depositing a titanium aluminum nitride film on a substrate surface with a controlled amount of carbon. The methods include exposing a substrate surface to a titanium precursor, a nitrogen reactant and an aluminum precursor with purges of the unreacted titanium and aluminum precursors and unreacted nitrogen reactants between each exposure.