Abstract: A method of forming a crystalline silicon layer on a substrate is disclosed. In one aspect, the method includes performing a metal induced crystallization process. The process includes depositing a metal (e.g. aluminum) on the substrate at a first temperature, the metal having an external surface. The method may also include oxidizing the external surface of the metal at a second temperature, and depositing amorphous silicon on the oxidized external surface of the metal at a third temperature. The method may also include annealing the metal and the silicon at a fourth temperature, whereby a crystalline silicon layer is obtained on the substrate covered by an external layer comprising the metal, and removing the external layer comprising the metal thereby exposing the crystalline silicon layer, wherein at least the first temperature and the fourth temperature (crystallization temperature) are not lower than 200° C.

Abstract: A method of forming a crystalline silicon layer on a microrough face of a substrate by reducing the microroughness of the face and then performing a metal induced crystallization process on the face is disclosed. The method further comprises, after metal induced crystallization and before removing the metal layer, removing silicon islands using the metal layer as a mask.

Abstract: A method of forming a crystalline silicon layer on a microrough face of a substrate by reducing the microroughness of the face and then performing a metal induced crystallization process on the face is disclosed. The method further comprises, after metal induced crystallization and before removing the metal layer, removing silicon islands using the metal layer as a mask.

Abstract: A method of forming a crystalline silicon layer on a microrough face of a substrate by reducing the microroughness of the face and then performing a metal induced crystallization process on the face is disclosed.