Abstract: An integrated optoelectronic device includes a substrate which supports a passive waveguide for index-confining, in two transverse directions, and guiding, along a longitudinal direction, at least one optical mode. The devices further include a first charge transport layer for transporting charge carriers of a first conductivity type, a second charge transport layer for transporting charge carriers of a second conductivity type, opposite to the first conductivity type, and an active layer comprising a particulate film of solution-processable semiconductor nanocrystals. The active layer is arranged relative to the charge transport layers to form a diode junction. The active layer and the first and the second charge transport layer are further formed on the substrate such that they each overlap at least a portion of the waveguide in a cross-section perpendicular to the longitudinal direction. The active layer is evanescently coupled to the waveguide.

Abstract: A temperature compensation method for wavelength monitoring using spectrometers on photonic integrated chips and a related temperature-compensated wavelength monitoring device include an optical filter of the chip filters a source signal to provide at least one spectral reference line to a first spectrometer to detect thermal wavelength drifts thereof. At least one spectral line to be monitored is received by the same or another spectrometer of the chip to detect wavelength shifts thereof. The detected thermal drift of the reference line is compared to calibrated thermal drifts for the reference line which is associated with a calibrated thermal drift for the spectral response curve of the spectrometer receiving the spectral line to be monitored. A thermal drift rate for the response curve of the optical filter differs from a thermal drift rate for the response curve of the first spectrometer at least by an amount.

Abstract: The invention relates to the fabrication of optical switches in transparent substrates. The method includes exposing part of the substrate to a stream of femtosecond laser pulses to form an exposed volume which can later be etched to form a channel used for microfluidic control of the switch. This process is referred to as femtosecond laser induced chemical etching (FLICE). The waveguides of the optical switch are also written in the substrate by using femtosecond laser inscription (FLI), which can be performed in the same operation as the exposure step in the FLICE formation of the channel, thus ensuring alignment between the waveguides and the channel.

Abstract: A photonic integrated circuit comprises an input interface adapted for receiving an optical input signal and splitting it into two distinct polarization modes and furthermore adapted for rotating the polarization of one of the modes for providing the splitted signals in a common polarization mode. The PIC also comprises a combiner adapted for combining the first mode signal and the second mode signal into a combined signal and a decohering means adapted for transforming at least one of the first mode signal and the second mode signal such that the first mode signal and the second mode signal are received by the combiner in a mutually incoherent state. A processing component for receiving and processing said combined signal is also comprised.

Abstract: Example embodiments relate to active-passive waveguide photonic systems. An example embodiment includes a monolithic integrated active/passive waveguide photonic system. The system includes a substrate having positioned thereon at least one active waveguide and at least one passive waveguide. The at least one active waveguide and the at least one passive waveguide are monolithically integrated and are arranged for evanescent wave coupling between the waveguides. The at least one active waveguide and the at least one passive waveguide are positioned so that at least a portion of each waveguide does not overlap the other waveguide, both in a height direction and in a lateral direction with respect to the substrate.

Abstract: A photonic integrated circuit comprises an input interface adapted for receiving an optical input signal and splitting it into two distinct polarization modes and furthermore adapted for rotating the polarization of one of the modes for providing the splitted signals in a common polarization mode. The PIC also comprises a combiner adapted for combining the first mode signal and the second mode signal into a combined signal and a decohering means adapted for transforming at least one of the first mode signal and the second mode signal such that the first mode signal and the second mode signal are received by the combiner in a mutually incoherent state. A processing component for receiving and processing said combined signal is also comprised.

Abstract: A photonic integrated circuit comprises an input interface adapted for receiving an optical input signal and splitting it into two distinct polarization modes and furthermore adapted for rotating the polarization of one of the modes for providing the splitted signals in a common polarization mode,. The PIC also comprises a combiner adapted for combining the first mode signal and the second mode signal into a combined signal and a decohering means adapted for transforming at least one of the first mode signal and the second mode signal such that the first mode signal and the second mode signal are received by the combiner in a mutually incoherent state. A processing component for receiving and processing said combined signal is also comprised.

Abstract: Example embodiments relate to active-passive waveguide photonic systems. An example embodiment includes a monolithic integrated active/passive waveguide photonic system. The system includes a substrate having positioned thereon at least one active waveguide and at least one passive waveguide. The at least one active waveguide and the at least one passive waveguide are monolithically integrated and are arranged for evanescent wave coupling between the waveguides. The at least one active waveguide and the at least one passive waveguide are positioned so that at least a portion of each waveguide does not overlap the other waveguide, both in a height direction and in a lateral direction with respect to the substrate.

Abstract: A method of producing a heterogeneous photonic integrated circuit includes integrating at least one III-V hybrid device on a source substrate having at least a top silicon layer, and transferring by transfer-printing or by flip-chip bonding the III-V hybrid device and at least part of the top silicon layer of the source substrate to a semiconductor-on-insulator or dielectric-on-insulator host substrate.

Abstract: A photonic integrated circuit comprises an input interface adapted for receiving an optical input signal and splitting it into two distinct polarization modes and furthermore adapted for rotating the polarization of one of the modes for providing the splitted signals in a common polarization mode. The PIC also comprises a combiner adapted for combining the first mode signal and the second mode signal into a combined signal and a decohering means adapted for transforming at least one of the first mode signal and the second mode signal such that the first mode signal and the second mode signal are received by the combiner in a mutually incoherent state. A processing component for receiving and processing said combined signal is also comprised.

Abstract: The present disclosure generally relates to a method of optically coupling a photonic integrated circuit and an external optical component.

Abstract: A method of producing a heterogeneous photonic integrated circuit includes integrating at least one III-V hybrid device on a source substrate having at least a top silicon layer, and transferring by transfer-printing or by flip-chip bonding the III-V hybrid device and at least part of the top silicon layer of the source substrate to a semiconductor-on-insulator or dielectric-on-insulator host substrate.

Abstract: The present disclosure relates to a method for integrating a sub-micron III-V waveguide laser on a semiconductor photonics platform as well as to a corresponding device/system. The method comprises providing on a semiconductor substrate an electrically insulating layer, etching a trench having a width in the range between 50 nm and 800 nm through the electrically insulating layer, thereby locally exposing the silicon substrate, providing a III-V layer stack in the trench by local epitaxial growth to form a channel waveguide, and providing a light confinement element for confining radiation in the local-epitaxial-grown channel waveguide.

Abstract: The present disclosure relates to a method for integrating a sub-micron III-V waveguide laser on a semiconductor photonics platform as well as to a corresponding device/system. The method comprises providing on a semiconductor substrate an electrically insulating layer, etching a trench having a width in the range between 50 nm and 800 nm through the electrically insulating layer, thereby locally exposing the silicon substrate, providing a III-V layer stack in the trench by local epitaxial growth to form a channel waveguide, and providing a light confinement element for confining radiation in the local-epitaxial-grown channel waveguide.

Abstract: The present disclosure generally relates to a method of optically coupling a photonic integrated circuit and an external optical component.

Abstract: A hybrid laser for generating radiation includes an optical passive material and an optical active material. The laser includes a first optical waveguide and optical laser components with reflectors in the optical passive material. The first optical waveguide is adapted for coupling out radiation from the hybrid laser. The laser also includes a second optical waveguide defined in the optical active material. The optical laser components include reflectors defining a cavity and furthermore are adapted for providing laser cavity confinement in the first optical waveguide and the second optical waveguide. The second optical waveguide thereby is positioned at least partly over the first optical waveguide so that an evanescent coupling interface is defined between the second optical waveguide and the first optical waveguide and the evanescent coupling interface is positioned within the laser cavity.

Abstract: The present invention relates to an integrated photonic device (100) operatively coupleable with an optical element (300) in a first coupling direction. The integrated photonic device (100) comprises an integrated photonic waveguide (120) and a grating coupler (130) that is adapted for diffracting light from the waveguide (120) into a second coupling direction different from the first coupling direction. The integrated photonics device also comprises a refractive element (110) disposed adjacent the grating coupler (130) and adapted to refract the light emerging from the grating coupler (130) in the second coupling direction into the first coupling direction.

Abstract: Method of producing a photonic device including at least one light source and at least one photodetector on a structure including a waveguide layer, this method comprising the following steps: a) growing successively on a substrate (10), a photodetection structure (11) and a light source structure (12), the photodetection structure and the light source structure being made of a stack of layers, the light source layers being stacked on top of the photodetector layers and both structures sharing one of these layers.

Abstract: An optical device for optically multiplexing or demultiplexing light of different predetermined wavelengths is provided, the optical device comprising at least one first waveguide (11) and at least one second waveguide (12) formed on a substrate (10), wherein the at least one first waveguide and the at least one second waveguide intersect at an intersection, comprising a diffraction grating structure (13) formed at the intersection. There exists a first wavelength or wavelength band travelling within the first waveguide (11) exciting the grating structure and being diffracted an angle corresponding to an outcoupling direction and there exists a second wavelength or wavelength band, different from the first wavelength or wavelength band, travelling within the second waveguide (12) exciting the grating structure and being diffracted at an angle corresponding to the same outcoupling direction.

Abstract: A hybrid laser for generating radiation includes an optical passive material and an optical active material. The laser includes a first optical waveguide and optical laser components with reflectors in the optical passive material. The first optical waveguide is adapted for coupling out radiation from the hybrid laser. The laser also includes a second optical waveguide defined in the optical active material. The optical laser components include reflectors defining a cavity and furthermore are adapted for providing laser cavity confinement in the first optical waveguide and the second optical waveguide. The second optical waveguide thereby is positioned at least partly over the first optical waveguide so that an evanescent coupling interface is defined between the second optical waveguide and the first optical waveguide and the evanescent coupling interface is positioned within the laser cavity.