Abstract: High aspect ratio trenches may be filled with metal that grows more from the bottom than the top of the trench. As a result, the tendency to form seams or to close of the trench at the top during filling may be reduced in some embodiments. Material that encourages the growth of metal may be formed in the trench at the bottom, while leaving the region of the trench near the top free of such material to encourage growth upwardly from the bottom.

Abstract: High aspect ratio trenches may be filled with metal that grows more from the bottom than the top of the trench. As a result, the tendency to form seams or to close of the trench at the top during filling may be reduced in sonic embodiments. Material that encourages the growth of metal may be formed in the trench at the bottom, while leaving the region of the trench near the top free of such material to encourage growth upwardly from the bottom.

Abstract: Plug contacts may be formed with barrier layers having thicknesses of less than 50 ? in some embodiments. In one embodiment, the barrier layer may be formed by the chemical vapor deposition of diborane, forming a boron layer between a metallic contact and the surrounding dielectric and between a metallic contact and the substrate and/or substrate contact. This boron layer may be substantially pure boron and boron silicide.

Abstract: High aspect ratio trenches may be filled with metal that grows more from the bottom than the top of the trench. As a result, the tendency to form seams or to close off the trench at the top during filling may be reduced in some embodiments. Material that encourages the growth of metal may be formed in the trench at the bottom, while leaving the region of the trench near the top free of such material to encourage growth upwardly from the bottom.

Abstract: Method and systems provide growth of polymer structures at a high rate in a selective manner. In various embodiments, the method or system can expose the growth site to a polymer source and growing a polymer tube at a rate of at least 80 micrometer per hour at the growth site. The method or system can provide selectivity by providing a growth site on a substrate by patterning a metal, such as copper, that provides a seed site for the polymer. Non-selected sites can be coated with a polymer growth inhibitor, such as polyimide or silicon nitride.

Abstract: Plug contacts may be formed with barrier layers having thicknesses of less than 50 ? in some embodiments. In one embodiment, the barrier layer may be formed by the chemical vapor deposition of diborane, forming a boron layer between a metallic contact and the surrounding dielectric and between a metallic contact and the substrate and/or substrate contact. This boron layer may be substantially pure boron and boron silicide.

Abstract: Plug contacts may be formed with barrier layers having thicknesses of less than 50 ? in some embodiments. In one embodiment, the barrier layer may be formed by the chemical vapor deposition of diborane, forming a boron layer between a metallic contact and the surrounding dielectric and between a metallic contact and the substrate and/or substrate contact. This boron layer may be substantially pure boron and boron silicide.

Abstract: Plug contacts may be formed with barrier layers having thicknesses of less than 50 ? in some embodiments. In one embodiment, the barrier layer may be formed by the chemical vapor deposition of diborane, forming a boron layer between a metallic contact and the surrounding dielectric and between a metallic contact and the substrate and/or substrate contact. This boron layer may be substantially pure boron and boron silicide.

Abstract: A method of plug fill for high aspect ratio plugs wherein a nucleation layer is formed at a bottom of a via and not on the sidewalls. The plug fill is in the direction from bottom to top of the via and not inwards from the sidewalls. The resulting plug is voidless and seamless.

Abstract: Method and systems provide growth of polymer structures at a high rate in a selective manner. In various embodiments, the method or system can expose the growth site to a polymer source and growing a polymer tube at a rate of at least 80 micrometer per hour at the growth site. The method or system can provide selectivity by providing a growth site on a substrate by patterning a metal, such as copper, that provides a seed site for the polymer. Non-selected sites can be coated with a polymer growth inhibitor, such as polyimide or silicon nitride.

Abstract: High aspect ratio trenches may be filled with metal that grows more from the bottom than the top of the trench. As a result, the tendency to form seams or to close off the trench at the top during filling may be reduced in some embodiments. Material that encourages the growth of metal may be formed in the trench at the bottom, while leaving the region of the trench near the top free of such material to encourage growth upwardly from the bottom.

Abstract: Method and systems provide growth of polymer structures at a high rate in a selective manner. In various embodiments, the method or system can expose the growth site to a polymer source and growing a polymer tube at a rate of at least 80 micrometer per hour at the growth site. The method or system can provide selectivity by providing a growth site on a substrate by patterning a metal, such as copper, that provides a seed site for the polymer. Non-selected sites can be coated with a polymer growth inhibitor, such as polyimide or silicon nitride.

Abstract: Method and systems provide growth of polymer structures at a high rate in a selective manner. In various embodiments, the method or system can expose the growth site to a polymer source and growing a polymer tube at a rate of at least 80 micrometer per hour at the growth site. The method or system can provide selectivity by providing a growth site on a substrate by patterning a metal, such as copper, that provides a seed site for the polymer. Non-selected sites can be coated with a polymer growth inhibitor, such as polyimide or silicon nitride.

Abstract: A method of plug fill for high aspect ratio plugs wherein a nucleation layer is formed at a bottom of a via and not on the sidewalls. The plug fill is in the direction from bottom to top of the via and not inwards from the sidewalls. The resulting plug is voidless and seamless.