Patents by Inventor Du Yeong LEE
Du Yeong LEE has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11093824Abstract: The present disclosure provides a neuromorphic device and a method of driving the same. The neuromorphic device of the present disclosure includes a channel, the magnetization direction of which is changed as a plurality of data is integrated, first and second magnetization regulators formed on both ends of the channel and responsible for changing the magnetization direction of the channel according to a plurality of input data, and a controller formed on the channel between the first and second magnetization regulators and responsible for firing data equal to or greater than a critical value integrated in the channel.Type: GrantFiled: September 1, 2017Date of Patent: August 17, 2021Assignee: Samsung Electronics Co., Ltd.Inventors: Jea Gun Park, Du Yeong Lee, Seung Eun Lee
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Patent number: 11050014Abstract: A memory device contains lower electrodes, a buffer layer, a seed layer, a magnetic tunnel junction, a capping layer, synthetic antiferromagnetic layers, and an upper electrode, which are formed on a substrate in a laminated manner. In the memory device, the lower electrodes and the seed layer are formed of a polycrystalline conductive material, and the perpendicular magnetic anisotropy of the magnetic tunnel junction is maintained upon heat treatment at a high temperature of 400° C. or more.Type: GrantFiled: March 18, 2015Date of Patent: June 29, 2021Assignee: Industry-University Cooperation Foundation Hanyang UniversityInventors: Jea Gun Park, Du Yeong Lee, Seung Eun Lee, Min Su Jeon, Jong Ung Baek, Tae Hun Shim
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Patent number: 10854254Abstract: The present invention provides a memory device in which a lower electrode, a seed layer, synthetic antiferromagnetic layers, a separation layer, a magnetic tunnel junction, a capping layer, and an upper electrode are formed on a substrate in a laminated manner, wherein a diffusion barrier is formed between the magnetic tunnel junction and the capping layer. In addition, the present invention provides a memory device in which a lower electrode, a seed layer, synthetic antiferromagnetic layers, a separation layer, a magnetic tunnel junction, a capping layer, and an upper electrode are formed on a substrate in a laminated manner, wherein the seed layer is formed of a material that allows the synthetic antiferromagnetic layers to grow in the FCC (111) direction.Type: GrantFiled: November 1, 2019Date of Patent: December 1, 2020Assignee: IUCF-HYU (INDUSTRY—UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)Inventors: Jea Gun Park, Du Yeong Lee, Seung Eun Lee
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Publication number: 20200357450Abstract: The present invention provides a memory device in which a lower electrode, a seed layer, synthetic antiferromagnetic layers, a separation layer, a magnetic tunnel junction, a capping layer, and an upper electrode are formed on a substrate in a laminated manner, wherein a diffusion barrier is formed between the magnetic tunnel junction and the capping layer. In addition, the present invention provides a memory device in which a lower electrode, a seed layer, synthetic antiferromagnetic layers, a separation layer, a magnetic tunnel junction, a capping layer, and an upper electrode are formed on a substrate in a laminated manner, wherein the seed layer is formed of a material that allows the synthetic antiferromagnetic layers to grow in the FCC (111) direction.Type: ApplicationFiled: November 1, 2019Publication date: November 12, 2020Applicant: Industry-University Cooperation Foundation Hanyang UniversityInventors: Jea Gun PARK, Du Yeong Lee, Seung Eun Lee
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Patent number: 10783945Abstract: The present invention provides a memory device in which a lower electrode, a seed layer, synthetic antiferromagnetic layers, a separation layer, a magnetic tunnel junction, a capping layer, and an upper electrode are formed on a substrate in a laminated manner, wherein a diffusion barrier is formed between the magnetic tunnel junction and the capping layer. In addition, the present invention provides a memory device in which a lower electrode, a seed layer, synthetic antiferromagnetic layers, a separation layer, a magnetic tunnel junction, a capping layer, and an upper electrode are formed on a substrate in a laminated manner, wherein the seed layer is formed of a material that allows the synthetic antiferromagnetic layers to grow in the FCC (111) direction.Type: GrantFiled: November 18, 2019Date of Patent: September 22, 2020Assignee: IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)Inventors: Jea Gun Park, Du Yeong Lee, Seung Eun Lee
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Publication number: 20200266333Abstract: The present invention provides a memory device in which lower electrodes, a buffer layer, a seed layer, a magnetic tunnel junction, a capping layer, synthetic exchange diamagnetic layers, and an upper electrode are formed on a substrate in a laminated manner. According to the present invention, the lower electrodes and the seed layer are formed of a polycrystalline conductive material, and the perpendicular magnetic anisotropy of the magnetic tunnel junction is maintained upon heat treatment at a high temperature of 400° C. or more.Type: ApplicationFiled: March 18, 2015Publication date: August 20, 2020Applicant: Industry-University Cooperation Foundation Hanyang UniversityInventors: Jea Gun PARK, Du Yeong LEE, Seung Eun LEE, Min Su JEON, Jong Ung BAEK, Tae Hun SHIM
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Patent number: 10643681Abstract: The present invention provides a memory device in which a lower electrode, a seed layer, synthetic antiferromagnetic (SyAF) layers, a separation layer, a magnetic tunnel junction, a capping layer, and an upper electrode are formed on a substrate in a laminated manner, wherein a diffusion barrier is formed between the magnetic tunnel junction and the capping layer. In addition, the present invention provides a memory device in which a lower electrode, a seed layer, SyAF layers, a separation layer, a magnetic tunnel junction, a capping layer, and an upper electrode are formed on a substrate in a laminated manner, wherein the seed layer is formed of a material that allows the SyAF layers to grow in the FCC (111) direction.Type: GrantFiled: April 19, 2019Date of Patent: May 5, 2020Assignee: IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)Inventors: Jea Gun Park, Du Yeong Lee, Seung Eun Lee
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Publication number: 20200090720Abstract: The present invention provides a memory device in which a lower electrode, a seed layer, synthetic antiferromagnetic layers, a separation layer, a magnetic tunnel junction, a capping layer, and an upper electrode are formed on a substrate in a laminated manner, wherein a diffusion barrier is formed between the magnetic tunnel junction and the capping layer. In addition, the present invention provides a memory device in which a lower electrode, a seed layer, synthetic antiferromagnetic layers, a separation layer, a magnetic tunnel junction, a capping layer, and an upper electrode are formed on a substrate in a laminated manner, wherein the seed layer is formed of a material that allows the synthetic antiferromagnetic layers to grow in the FCC (111) direction.Type: ApplicationFiled: November 18, 2019Publication date: March 19, 2020Applicant: INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITYInventors: Jea Gun PARK, Du Yeong LEE, Seung Eun LEE
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Patent number: 10586919Abstract: A memory device in which lower electrodes, a buffer layer, a seed layer, a magnetic tunnel junction, a capping layer, synthetic antiferromagnetic layers, and an upper electrode are formed on a substrate in a laminated manner. The lower electrodes and the seed layer are formed of a polycrystalline conductive material, and the perpendicular magnetic anisotropy of the magnetic tunnel junction is maintained upon heat treatment at a high temperature of 400° C. or more.Type: GrantFiled: March 18, 2015Date of Patent: March 10, 2020Assignee: Industry-University Cooperation Foundation Hanyang UniversityInventors: Jea Gun Park, Du Yeong Lee, Seung Eun Lee, Min Su Jeon, Jong Ung Baek, Tae Hun Shim
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Patent number: 10580964Abstract: The present invention relates to a memory device including a substrate and a lower electrode, buffer layer, seed layer, Magnetic Tunnel Junction (MTJ), capping layer, synthetic antiferromagnetic layer, and upper electrode formed on the substrate.Type: GrantFiled: September 18, 2017Date of Patent: March 3, 2020Assignee: Industry-University Cooperation Foundation Hanyang UniversityInventors: Jea Gun Park, Du Yeong Lee, Song Hwa Hong, Jin Young Choi, Seung Eun Lee, Junli Li
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Publication number: 20200066319Abstract: The present invention provides a memory device in which a lower electrode, a seed layer, synthetic antiferromagnetic layers, a separation layer, a magnetic tunnel junction, a capping layer, and an upper electrode are formed on a substrate in a laminated manner, wherein a diffusion barrier is formed between the magnetic tunnel junction and the capping layer. In addition, the present invention provides a memory device in which a lower electrode, a seed layer, synthetic antiferromagnetic layers, a separation layer, a magnetic tunnel junction, a capping layer, and an upper electrode are formed on a substrate in a laminated manner, wherein the seed layer is formed of a material that allows the synthetic antiferromagnetic layers to grow in the FCC (111) direction.Type: ApplicationFiled: November 1, 2019Publication date: February 27, 2020Applicant: Industry-University Cooperation Foundation Hanyang UniversityInventors: Jea Gun PARK, Du Yeong Lee, Seung Eun Lee
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Patent number: 10516097Abstract: The present invention provides a memory device in which lower electrodes, a buffer layer, a seed layer, a magnetic tunnel junction, a capping layer, synthetic exchange diamagnetic layers, and an upper electrode are formed on a substrate in a laminated manner. According to the present invention, the lower electrodes and the seed layer are formed of a polycrystalline conductive material, and the perpendicular magnetic anisotropy of the magnetic tunnel junction is maintained upon heat treatment at a high temperature of 400° C. or more.Type: GrantFiled: March 18, 2015Date of Patent: December 24, 2019Assignee: Industry-University Cooperation Foundation Hanyang UniversityInventors: Jea Gun Park, Du Yeong Lee, Seung Eun Lee, Min Su Jeon, Jong Ung Baek, Tae Hun Shim
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Patent number: 10453510Abstract: The present invention provides a memory device in which a lower electrode, a seed layer, synthetic antiferromagnetic (SyAF) layers, a separation layer, a magnetic tunnel junction, a capping layer, and an upper electrode are formed on a substrate in a laminated manner, wherein a diffusion barrier is formed between the magnetic tunnel junction and the capping layer. In addition, the present invention provides a memory device in which a lower electrode, a seed layer, SyAF layers, a separation layer, a magnetic tunnel junction, a capping layer, and an upper electrode are formed on a substrate in a laminated manner, wherein the seed layer is formed of a material that allows the SyAF layers to grow in the FCC (111) direction.Type: GrantFiled: February 3, 2017Date of Patent: October 22, 2019Assignee: IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)Inventors: Jea Gun Park, Du Yeong Lee, Seung Eun Lee
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Publication number: 20190251427Abstract: The present disclosure provides a neuromorphic device and a method of driving the same. The neuromorphic device of the present disclosure includes a channel, the magnetization direction of which is changed as a plurality of data is integrated, first and second magnetization regulators formed on both ends of the channel and responsible for changing the magnetization direction of the channel according to a plurality of input data, and a controller formed on the channel between the first and second magnetization regulators and responsible for firing data equal to or greater than a critical value integrated in the channel.Type: ApplicationFiled: September 1, 2017Publication date: August 15, 2019Inventors: Jea Gun PARK, Du Yeong LEE, Seung Eun LEE
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Publication number: 20190244649Abstract: The present invention provides a memory device in which a lower electrode, a seed layer, synthetic exchange diamagnetic layers, a separation layer, a magnetic tunnel junction, a capping layer, and an upper electrode are formed on a substrate in a laminated manner, wherein a diffusion barrier is formed between the magnetic tunnel junction and the capping layer. In addition, the present invention provides a memory device in which a lower electrode, a seed layer, synthetic exchange diamagnetic layers, a separation layer, a magnetic tunnel junction, a capping layer, and an upper electrode are formed on a substrate in a laminated manner, wherein the seed layer is formed of a material that allows the synthetic exchange diamagnetic layers to grow in the FCC (111) direction.Type: ApplicationFiled: April 19, 2019Publication date: August 8, 2019Applicant: Industry-University Cooperation Foundation Hanyang UniversityInventors: Jea Gun PARK, Du Yeong LEE, Seung Eun LEE
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Publication number: 20190229259Abstract: The present invention provides a memory device in which lower electrodes, a buffer layer, a seed layer, a magnetic tunnel junction, a capping layer, synthetic exchange diamagnetic layers, and an upper electrode are formed on a substrate in a laminated manner. According to the present invention, the lower electrodes and the seed layer are formed of a polycrystalline conductive material, and the perpendicular magnetic anisotropy of the magnetic tunnel junction is maintained upon heat treatment at a high temperature of 400° C. or more.Type: ApplicationFiled: March 18, 2015Publication date: July 25, 2019Applicant: Industry-University Cooperation Foundation Hanyang UniversityInventors: Jea Gun PARK, Du Yeong LEE, Seung Eun LEE, Min Su JEON, Jong Ung BAEK, Tae Hun SHIM
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Publication number: 20190172997Abstract: The present invention provides a memory device in which lower electrodes, a buffer layer, a seed layer, a magnetic tunnel junction, a capping layer, synthetic exchange diamagnetic layers, and an upper electrode are formed on a substrate in a laminated manner. According to the present invention, the lower electrodes and the seed layer are formed of a polycrystalline conductive material, and the perpendicular magnetic anisotropy of the magnetic tunnel junction is maintained upon heat treatment at a high temperature of 400° C. or more.Type: ApplicationFiled: March 18, 2015Publication date: June 6, 2019Applicant: Industry-University Cooperation Foundation Hanyang UniversityInventors: Jea Gun PARK, Du Yeong LEE, Seung Eun LEE, Min Su JEON, Jong Ung BAEK, Tae Hun SHIM
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Publication number: 20190043548Abstract: The present invention provides a memory device in which a lower electrode, a seed layer, synthetic exchange diamagnetic layers, a separation layer, a magnetic tunnel junction, a capping layer, and an upper electrode are formed on a substrate in a laminated manner, wherein a diffusion barrier is formed between the magnetic tunnel junction and the capping layer. In addition, the present invention provides a memory device in which a lower electrode, a seed layer, synthetic exchange diamagnetic layers, a separation layer, a magnetic tunnel junction, a capping layer, and an upper electrode are formed on a substrate in a laminated manner, wherein the seed layer is formed of a material that allows the synthetic exchange diamagnetic layers to grow in the FCC (111) direction.Type: ApplicationFiled: February 3, 2017Publication date: February 7, 2019Applicant: Industry-University Cooperation Foundation Hanyang UniversityInventors: Jea Gun PARK, Du Yeong LEE, Seung Eun LEE
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Publication number: 20180006213Abstract: The present invention relates to a memory device including a substrate and a lower electrode, buffer layer, seed layer, Magnetic Tunnel Junction (MTJ), capping layer, synthetic exchange diamagnetic layer, and upper electrode formed on the substrate.Type: ApplicationFiled: September 18, 2017Publication date: January 4, 2018Applicant: Industry-University Cooperation Foundation Hanyang UniversityInventors: Jea Gun PARK, Du Yeong LEE, Song Hwa HONG, Jin Young CHOI, Seung Eun LEE, Junli LI
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Patent number: 9825151Abstract: The present invention suggests a substrate manufacturing method and a manufacturing method of a semiconductor device comprising: providing a SOI structure having an insulation layer and a silicon layer laminated on a substrate; laminating to form a silicon germanium layer and a capping silicon layer on the SOI structure; implementing oxidation process at two or more temperatures and heat treatment process at least once during the oxidation process to form a germanium cohesion layer and a silicon dioxide layer; and removing the silicon dioxide layer.Type: GrantFiled: January 27, 2015Date of Patent: November 21, 2017Assignee: IUCF-HYUInventors: Jea Gun Park, Tea Hun Shim, Seung Hyun Song, Du Yeong Lee