Patents by Inventor Duan-Fu Stephen Hsu
Duan-Fu Stephen Hsu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20200249578Abstract: A method for optimization to increase lithographic apparatus throughput for a patterning process is described. The method includes providing a baseline dose for an EUV illumination and an initial pupil configuration, associated with a lithographic apparatus. The baseline dose and the initial pupil configuration are configured for use with a dose anchor mask pattern and a corresponding dose anchor target pattern for setting an illumination dose for corresponding device patterns of interest. The method includes biasing the dose anchor mask pattern relative to the dose anchor target pattern; determining an acceptable lower dose for the biased dose anchor mask pattern and the initial pupil configuration; unbiasing the dose anchor mask pattern relative to the dose anchor target pattern; and determining a changed pupil configuration and a mask bias for the device patterns of interest based on the acceptable lower dose and the unbiased dose anchor mask pattern.Type: ApplicationFiled: January 31, 2020Publication date: August 6, 2020Applicant: ASML NETHERLANDS B.V.Inventors: Duan-Fu Stephen Hsu, Jingjing Liu
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Patent number: 10670973Abstract: A method includes obtaining a sub-layout having an area that is a performance limiting spot, adjusting colors of patterns in the area, and determining whether the area is still a performance limiting spot. Another method includes decomposing patterns in a design layout into multiple sub-layouts; determining for at least one area in one of the sub-layouts, the likelihood of that a figure of merit is beyond its allowed range; and if the likelihood is above a threshold, that one sub-layout has a performance limiting spot. Another method includes: obtaining a design layout having a first group of patterns and a second group of patterns, wherein colors of the first group of patterns are not allowed to change and colors of the second group of patterns are allowed to change; and co-optimizing at least the first group of patterns, the second group of patterns and an illumination of a lithographic apparatus.Type: GrantFiled: April 29, 2016Date of Patent: June 2, 2020Assignee: ASML Netherlands B.V.Inventors: Yi Zou, Jing Su, Robert John Socha, Christopher Alan Spence, Duan-Fu Stephen Hsu
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Publication number: 20200041891Abstract: A patterning device, includes: an absorber layer on a patterning device substrate; and a reflective or transmissive layer on the patterning device substrate, wherein the absorber layer and the reflective or transmissive layer together define a pattern layout having a main feature and an attenuated sub-resolution assist feature paired with the main feature, wherein: the main feature is configured to generate, upon transferring the device pattern to a layer of patterning material on a substrate, the main feature in the layer of patterning material, and upon the transferring the pattern to the layer of patterning material, the attenuated sub-resolution assist feature is configured to avoid generating a feature in the layer of patterning material and to produce a different radiation intensity than the main feature.Type: ApplicationFiled: February 20, 2018Publication date: February 6, 2020Applicant: ASML NETHERLANDS B.V.Inventors: Duan-Fu Stephen HSU, Jingjing LIU
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Patent number: 10509310Abstract: A patterning device carries a pattern of features to be transferred onto a substrate using a lithographic apparatus. The patterning device is free of light absorber material, at least in an area. The pattern of features in the area may include a dense array of lines, trenches, dots or holes. Individual lines, holes, etc. are defined in at least one direction by pairs of edges between regions of different phase in the patterning device. A distance between the pair of edges in the at least one direction is at least 15% smaller than a size of the individual feature to be formed on the substrate once adjusted by a magnification factor, if any, of the lithographic apparatus. The patterning device may be adapted for use in EUV lithography. The patterning device may be adapted for use in a negative tone resist and development process.Type: GrantFiled: March 8, 2016Date of Patent: December 17, 2019Assignee: ASML Netherlands B.V.Inventors: Frank Arnoldus Johannes Maria Driessen, Duan-Fu Stephen Hsu
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Patent number: 10459346Abstract: A method to improve a lithographic process for imaging a portion of a design layout onto a substrate using a lithographic projection apparatus having an illumination system and projection optics, the method including: obtaining an illumination source shape and a mask defocus value; optimizing a dose of the lithographic process; and optimizing the portion of the design layout for each of a plurality of slit positions of the illumination source.Type: GrantFiled: July 16, 2018Date of Patent: October 29, 2019Assignee: ASML Netherlands B.V.Inventors: Duan-Fu Stephen Hsu, Rafael C. Howell, Xiaofeng Liu
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Publication number: 20190294053Abstract: Several methods of reducing one or more pattern displacement errors, contrast loss, best focus shift, tilt of a Bossung curve of a portion of a design layout used in a patterning process for imaging that portion onto a substrate using a lithographic apparatus. The methods include determining or adjusting one or more characteristics of one or more assist features using the one or more rules based on one or more parameters selected from a group consisting of: one or more characteristics of one or more design features in the portion, one or more characteristics of the patterning process, one or more characteristics of the lithographic apparatus, and/or a combination selected from the foregoing.Type: ApplicationFiled: June 13, 2019Publication date: September 26, 2019Applicant: ASML Netherlands B.V.Inventors: Duan-Fu Stephen HSU, Kurt E. WAMPLER
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Publication number: 20190285991Abstract: Disclosed herein are several methods of reducing one or more pattern displacement errors, contrast loss, best focus shift , tilt of a Bossung curve of a portion of a design layout used in a lithographic process for imaging that portion onto a substrate using a lithographic apparatus. The methods include adjusting an illumination source of the lithographic apparatus, placing assist features onto or adjusting positions and/or shapes existing assist features in the portion. Adjusting the illumination source and/or the assist features may be by an optimization algorithm.Type: ApplicationFiled: May 31, 2019Publication date: September 19, 2019Applicant: ASML Netherlands B.V.Inventors: Duan-Fu Stephen HSU, Feng-Liang LIU
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Patent number: 10394131Abstract: A method to improve a lithographic process of imaging a portion of a design layout onto a substrate using a lithographic projection apparatus, the method including: computing a multi-variable cost function, the multi-variable cost function being a function of a stochastic variation of a characteristic of an aerial image or a resist image, or a function of a variable that is a function of the stochastic variation or that affects the stochastic variation, the stochastic variation being a function of a plurality of design variables that represent characteristics of the lithographic process; and reconfiguring one or more of the characteristics of the lithographic process by adjusting one or more of the design variables until a certain termination condition is satisfied.Type: GrantFiled: February 9, 2016Date of Patent: August 27, 2019Assignee: ASML Netherlands B.V.Inventor: Duan-Fu Stephen Hsu
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Patent number: 10386727Abstract: A method to improve a lithographic process for imaging a portion of a design layout onto a substrate using a lithographic projection apparatus, the method including: computing a multi-variable cost function of a plurality of design variables that are characteristics of the lithographic process, and reconfiguring the characteristics of the lithographic process by adjusting the design variables until a predefined termination condition is satisfied. The multi-variable cost function may be a function of one or more pattern shift errors. Reconfiguration of the characteristics may be under one or more constraints on the one or more pattern shift errors.Type: GrantFiled: March 3, 2015Date of Patent: August 20, 2019Assignee: ASML Netherlands B.V.Inventors: Duan-Fu Stephen Hsu, Jianjun Jia, Xiaofeng Liu, Cuiping Zhang
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Patent number: 10331039Abstract: Methods of reducing a pattern displacement error, contrast loss, best focus shift, and/or tilt of a Bossung curve, of a portion of a design layout used in a patterning process for imaging that portion onto a substrate using a lithographic apparatus. The methods include determining or adjusting one or more characteristics of one or more assist features using one or more rules based on one or more parameters selected from: one or more characteristics of one or more design features in the portion, one or more characteristics of the patterning process, one or more characteristics of the lithographic apparatus, and/or a combination selected from the foregoing.Type: GrantFiled: September 23, 2015Date of Patent: June 25, 2019Assignee: ASML Netherlands B.V.Inventors: Duan-Fu Stephen Hsu, Kurt E. Wampler
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Patent number: 10310386Abstract: Methods of reducing a pattern displacement error, contrast loss, best focus shift, and/or tilt of a Bossung curve of a portion of a design layout used in a lithographic process for imaging that portion onto a substrate using a lithographic apparatus. The methods include adjusting an illumination source of the lithographic apparatus, placing one or more assist features onto, or adjusting a position and/or shape of one or more existing assist features in, the portion. Adjusting the illumination source and/or the one or more assist features may be by an optimization algorithm.Type: GrantFiled: June 29, 2015Date of Patent: June 4, 2019Assignee: ASML Netherlands B.V.Inventors: Duan-Fu Stephen Hsu, Feng-Liang Liu
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Publication number: 20190130060Abstract: A method including obtaining at least a clip of a design layout, and determining a representation of the clip on a patterning device, under a condition that a reduction ratio from the representation to the clip is anisotropic. A method including obtaining a relationship between a first geometric characteristic in a design layout or an image thereof, and a second geometric characteristic in a representation of the design layout on a patterning device, wherein the relationship is a function involving reduction ratios in two different directions.Type: ApplicationFiled: April 4, 2017Publication date: May 2, 2019Applicant: ASML NETHERLANDS R.VInventors: Duan-Fu Stephen HSU, Jingjing LIU
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Publication number: 20180341186Abstract: A method to improve a lithographic process for imaging a portion of a design layout onto a substrate using a lithographic projection apparatus having an illumination system and projection optics, the method including: obtaining an illumination source shape and a mask defocus value; optimizing a dose of the lithographic process; and optimizing the portion of the design layout for each of a plurality of slit positions of the illumination source.Type: ApplicationFiled: July 16, 2018Publication date: November 29, 2018Applicant: ASML Netherlands B.V.Inventors: Duan-Fu Stephen HSU, Rafael C. HOWELL, Xiaofeng LIU
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Patent number: 10025201Abstract: A method to improve a lithographic process for imaging a portion of a design layout onto a substrate using a lithographic projection apparatus having an illumination system and projection optics, the method including: obtaining an illumination source shape and a mask defocus value; optimizing a dose of the lithographic process; and optimizing the portion of the design layout for each of a plurality of slit positions of the illumination source.Type: GrantFiled: February 13, 2015Date of Patent: July 17, 2018Assignee: ASML Netherlands B.V.Inventors: Duan-Fu Stephen Hsu, Rafael C. Howell, Xiaofeng Liu
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Publication number: 20180120691Abstract: A patterning device carries a pattern of features to be transferred onto a substrate using a lithographic apparatus. The patterning device is free of light absorber material, at least in an area. The pattern of features in the area may include a dense array of lines, trenches, dots or holes. Individual lines, holes, etc. are defined in at least one direction by pairs of edges between regions of different phase in the patterning device. A distance between the pair of edges in the at least one direction is at least 15% smaller than a size of the individual feature to be formed on the substrate once adjusted by a magnification factor, if any, of the lithographic apparatus. The patterning device may be adapted for use in EUV lithography. The patterning device may be adapted for use in a negative tone resist and development process.Type: ApplicationFiled: March 8, 2016Publication date: May 3, 2018Applicant: ASML Netherlands B.V.Inventors: Frank Arnoldus Johannes Maria DRIESSEN, Duan-Fu Stephen HSU
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Publication number: 20180120709Abstract: A method including: determining a first simulated partial image formed, by a lithographic projection apparatus, from a first radiation portion propagating along a first group of one or more directions; determining a second simulated partial image formed, by the lithographic projection apparatus, from a second radiation portion propagating along a second group of one or more directions; and determining an image by incoherently adding the first partial image and the second partial image, wherein the first group of one or more directions and the second group of one or more directions are different.Type: ApplicationFiled: May 13, 2016Publication date: May 3, 2018Applicant: ASML Netherlands B.V.Inventors: Duan-Fu Stephen HSU, Rafael C. HOWELL, Jianjun JIA
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Publication number: 20180011407Abstract: A method to improve a lithographic process of imaging a portion of a design layout onto a substrate using a lithographic projection apparatus, the method including: computing a multi-variable cost function, the multi-variable cost function being a function of a stochastic variation of a characteristic of an aerial image or a resist image, or a function of a variable that is a function of the stochastic variation or that affects the stochastic variation, the stochastic variation being a function of a plurality of design variables that represent characteristics of the lithographic process; and reconfiguring one or more of the characteristics of the lithographic process by adjusting one or more of the design variables until a certain termination condition is satisfied.Type: ApplicationFiled: February 9, 2016Publication date: January 11, 2018Applicant: ASML Netherlands B.V.Inventor: Duan-Fu Stephen HSU
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Publication number: 20170329235Abstract: Methods of reducing a pattern displacement error, contrast loss, best focus shift, and/or tilt of a Bossung curve, of a portion of a design layout used in a patterning process for imaging that portion onto a substrate using a lithographic apparatus. The methods include determining or adjusting one or more characteristics of one or more assist features using one or more rules based on one or more parameters selected from: one or more characteristics of one or more design features in the portion, one or more characteristics of the patterning process, one or more characteristics of the lithographic apparatus, and/or a combination selected from the foregoing.Type: ApplicationFiled: September 23, 2015Publication date: November 16, 2017Inventors: Duan-Fu Stephen HSU, Kurt E. WAMPLER
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Publication number: 20170184979Abstract: Methods of reducing a pattern displacement error, contrast loss, best focus shift, and/or tilt of a Bossung curve of a portion of a design layout used in a lithographic process for imaging that portion onto a substrate using a lithographic apparatus. The methods include adjusting an illumination source of the lithographic apparatus, placing one or more assist features onto, or adjusting a position and/or shape of one or more existing assist features in, the portion. Adjusting the illumination source and/or the one or more assist features may be by an optimization algorithm.Type: ApplicationFiled: June 29, 2015Publication date: June 29, 2017Applicant: ASML Netherlands B.V.Inventors: Duan-Fu Stephen HSU, Feng-Liang LIU
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Publication number: 20170082927Abstract: A method to improve a lithographic process for imaging a portion of a design layout onto a substrate using a lithographic projection apparatus, the method including: computing a multi-variable cost function of a plurality of design variables that are characteristics of the lithographic process, and reconfiguring the characteristics of the lithographic process by adjusting the design variables until a predefined termination condition is satisfied. The multi-variable cost function may be a function of one or more pattern shift errors. Reconfiguration of the characteristics may be under one or more constraints on the one or more pattern shift errors.Type: ApplicationFiled: March 3, 2015Publication date: March 23, 2017Applicant: ASML Netherlands B.V.Inventors: Duan-Fu Stephen HSU, Jianjun JIA, Xiaofeng LIU, Youping ZHANG