Abstract: Apparatus enabling modular implementation of active optical cable (AOC) with multiple integrated functions including: integration of different types of data on the AOC via media conversion; distribution of electrical power over the AOC; electrical multiplexing data channels for optical fibers; integration of voltage regulators enabling AOC operation at different supply voltages; integration of voltage regulators to provide stable, low noise power source; ruggedized, blind-mateable electrical connectors; integration of electronics and optoelectronics inside a connector backshell; implementation of health monitoring and test channel enabling monitoring, test, and control of both ends of the AOC and monitoring and control of upstream systems and components; and enabling a form, fit, function replacement of existing electrical cables to improve SWaP, electromagnetic interference resiliency, length-bandwidth product, electromagnetic pulse resistance, signal integrity, system reliability, testability and maintenanc

Abstract: A technology for wavelength division multiplexing light of a plurality of different wavelengths into one or more optical fibers is disclosed. In a first main embodiment, the light is multiplexed and turned by a designated angle using two lens arrays and a flat surface that functions as a mirror. In a second embodiment, a waveguide-based combiner structure multiplexes and turns a plurality of light beams of different wavelengths.

Abstract: A method of manufacturing a distributed Bragg reflector (DBR) in group III-V semiconductor compounds with improved optical and electrical characteristics is provided. A selected DBR structure is achieved by sequential exposure of a substrate to predetermined combinations of the elemental sources to produce a pair of DBR layers of compound alloys and a graded region including one or more discrete additional layers between the DBR layers of intermediate alloy composition. Exposure durations and combinations of the elemental sources in each exposure are predetermined by DBR design characteristics.

Abstract: A VCSEL waveguide grating coupler is provided such that a first and second mirror are positioned to define a resonant cavity between them. The waveguide grating coupler further includes a waveguide having a first grating formed as a part of the waveguide to couple light of a first polarization mode into the waveguide. A second grating is formed on the waveguide grating coupler and is orthogonal to the first grating. The second grating is operative to enhance the light coupled to the waveguide by creating a loss difference between light of the first polarization mode and light of a second polarization mode, so that light of the first polarization mode lases preferentially within the VCSEL.

Abstract: A wavelength division multiplexing (WDM) module for transmitting and/or receiving multiple signals simultaneously includes an array of vertical cavity surface emitting lasers (VCSELs) and/or photodetectors, respectively. In the transmitter case, different VCSELs are operated at different wavelengths that change depending on a value of a condition such as temperature and/or one or more other parameters. Multiple VCSELs are assigned to each channel of the WDM. The currently active VCSEL is switched to a different VCSEL assigned to a same channel and preferably having an operating wavelength that is closer to the signal wavelength at the current measured or estimated temperature and/or other parameter value. Multiple photodetectors are assigned to each channel of the WDM, and currently active detector is switched to the second detector within the same channel.

Abstract: A method for fabricating vertical cavity lasers and photodetectors on the same substrate from a single epitaxial layer to form integrated laser/photodetector structures. A DBR/cavity/DBR photodetector structure is formed on the substrate with the DBR on the input side of the photodetector being fabricated from relatively low index contrast, high refractive index semiconducting layers. Some of those same DBR layers on the input side of the photodetector are then converted from a low index contrast, high refractive index semiconducting material to a low refractive index material by, for example, etching the DBR/cavity/DBR structure down to the substrate layer and using lateral oxidation or etching, to form relatively high index contrast, high reflectivity mirrors for the laser.