Abstract: A standard cell architecture with a basic cell that spans multiple rows of the standard cell. This multi-row basic cell may be a dual-height cell that spans two rows, or it may span more than two rows. The multi-row basic cell may be intermixed in a standard cell design with smaller, single-height cells for high-density applications. The single-height cells may be used where possible and higher-drive dual-height basic cells where larger transistors are desired. Other multiple height cells may also be included if even more current is desirable. The power rail may include conductors of varying width.

Abstract: A standard cell architecture with a basic cell that spans multiple rows of the standard cell. This multi-row basic cell may be a dual-height cell that spans two rows, or it may span more than two rows. The multi-row basic cell may be intermixed in a standard cell design with smaller, single-height cells for high-density applications. The single-height cells may be used where possible and higher-drive dual-height basic cells where larger transistors are desired. Other multiple height cells may also be included if even more current is desirable. The power rail may include conductors of varying width.

Abstract: An metal programmable integrated circuit apparatus and method of manufacture and design using elevated metal layers for design-specific customization. The lower metal layer are used to form core cells and to provide power and clocking signals to the core cells. These core cell are customizable by the designer using only the upper metal layers. This new architecture allows faster turn-around time and fewer masks while keeping the time-to-market advantages of gate array structures.

Abstract: The semiconductor cell library of the present invention includes a plurality of semiconductor cell definitions. At least one of the semiconductor cell definitions includes a base cell and at least one derivative cell. The base cell has a logical function and includes a base cell layout pattern of transistors with at least one diffusion. The derivative cell has the same logical function as the base cell and includes a derivative cell layout pattern of transistors with at least on a diffusion region. The diffusion region of the derivative cell layout pattern is expanded in one dimension outwardly from a geometric center of the layout pattern relative to the diffusion region of the base cell layout pattern.

Abstract: A tag memory circuit includes an address index input, an address offset input and an integrated adder and pre-decode circuit. The integrated adder and pre-decode circuit has a first addend input coupled to the address index input, a second addend input coupled to the address offset input, and a pre-decoded sum output. A final row decode and word line driver circuit is coupled to the pre-decoded sum output and generates a word line output which is coupled to the address inputs of a tag memory array. The data outputs of the tag memory array are coupled to a sense amplifier.

Abstract: A semiconductor cell layout definition is used to define a semiconductor cell during a layout process of an integrated circuits. The semiconductor cell performs a logical function which is implemented by one or more interconnected transistors. The cell layout definition includes a layout pattern of the interconnected transistors, a transistor width input variable, a cell loading input variable and geometry data for the interconnected transistors. The geometry data for at least one of the transistors is a function of the transistor width input variable. The cell layout definition further includes a propagation delay which is a function of the transistor width and the cell loading input variables. The transistor width input variable allows the widths of the transistors in the cell to be optimized during the layout process to reduce timing violations and minimize power consumption.