Abstract: A circuit for defining a voltage potential of a floating well in which is formed at least one metal-oxide-semiconductor device includes a sense circuit operative to detect a voltage at a node to which the floating well is connected and to generate a control signal indicative of whether the voltage at the node is substantially within a voltage range. A lower value of the voltage range is substantially equal to a threshold voltage below a first supply voltage of the circuit. An upper value of the voltage range is substantially equal to a threshold voltage above the first supply voltage. The circuit for defining the voltage potential of the floating well further includes a voltage generator circuit operative to receive the control signal and to generate a bias signal for setting a voltage potential of the well in response to the control signal, the bias signal being controlled throughout the voltage range.

Abstract: An ESD clamp circuit for use between separate power rails. An ESD clamp is based on a wide nMOSFET. A symmetrical circuit is designed vis-à-vis the two power rails, with respect to ground, allowing discharge of an ESD surge in both polarities of stress. An nMOSFET device drives the gate of a large nMOSFET (e.g., having a device width between 1000 and 10,000 microns). The large power rail-to-power rail nMOSFET has its gate controlled by the output inverter stage of either ESD detection circuit connected to a respective power supply rail. The gate is switched to a common ground during normal operation of the integrated circuit.

Abstract: A PUR circuit for generating a reset signal includes a first node for receiving a reference voltage and a second node for receiving a supply voltage that is referenced with respect to the reference voltage. The circuit further includes a voltage level detector coupled between the first node and a third node, the voltage level detector being configured to generate a first control signal at the third node. The voltage level detector includes a first transistor having a first threshold voltage associated therewith. A resistance element is coupled between the second node and the third node, the resistance element having a first resistance value associated therewith. The circuit also includes an inverter having an input coupled to the third node and having an output for generating a second control signal in response to the first control signal. The inverter includes a second transistor having a second threshold voltage associated therewith which is lower than the first threshold voltage.