Abstract: Some embodiments include a method of forming a capacitor. An opening is formed through a silicon-containing mass to a base, and sidewalls of the opening are lined with protective material. A first capacitor electrode is formed within the opening and has sidewalls along the protective material. At least some of the silicon-containing mass is removed with an etch. The protective material protects the first capacitor electrode from being removed by the etch. A second capacitor electrode is formed along the sidewalls of the first capacitor electrode, and is spaced from the first capacitor electrode by capacitor dielectric. Some embodiments include multi-material structures having one or more of aluminum nitride, molybdenum nitride, niobium nitride, niobium oxide, silicon dioxide, tantalum nitride and tantalum oxide. Some embodiments include semiconductor constructions.

Abstract: Some embodiments include methods of forming conductive structures. An electrically conductive material may be deposited with a first deposition method. The first deposition method has a first deposition rate and forms a first portion of a conductive structure. A second portion of the conductive structure may be formed by depositing the electrically conductive material with a second deposition method having a second deposition rate. The second deposition rate may be different from the first deposition rate by at least about a factor of 3. In some embodiments, a region of the conductive structure is utilized as a transistor gate of a DRAM cell. Some embodiments include semiconductor constructions.

Abstract: Some embodiments include methods of forming conductive structures. An electrically conductive material may be deposited with a first deposition method. The first deposition method has a first deposition rate and forms a first portion of a conductive structure. A second portion of the conductive structure may be formed by depositing the electrically conductive material with a second deposition method having a second deposition rate. The second deposition rate may be different from the first deposition rate by at least about a factor of 3. In some embodiments, a region of the conductive structure is utilized as a transistor gate of a DRAM cell. Some embodiments include semiconductor constructions.

Abstract: Some embodiments include a method of forming a capacitor. An opening is formed through a silicon-containing mass to a base, and sidewalls of the opening are lined with protective material. A first capacitor electrode is formed within the opening and has sidewalls along the protective material. At least some of the silicon-containing mass is removed with an etch. The protective material protects the first capacitor electrode from being removed by the etch. A second capacitor electrode is formed along the sidewalls of the first capacitor electrode, and is spaced from the first capacitor electrode by capacitor dielectric. Some embodiments include multi-material structures having one or more of aluminum nitride, molybdenum nitride, niobium nitride, niobium oxide, silicon dioxide, tantalum nitride and tantalum oxide. Some embodiments include semiconductor constructions.

Abstract: Some embodiments include a method of forming a capacitor. An opening is formed through a silicon-containing mass to a base, and sidewalls of the opening are lined with protective material. A first capacitor electrode is formed within the opening and has sidewalls along the protective material. At least some of the silicon-containing mass is removed with an etch. The protective material protects the first capacitor electrode from being removed by the etch. A second capacitor electrode is formed along the sidewalls of the first capacitor electrode, and is spaced from the first capacitor electrode by capacitor dielectric. Some embodiments include multi-material structures having one or more of aluminum nitride, molybdenum nitride, niobium nitride, niobium oxide, silicon dioxide, tantalum nitride and tantalum oxide. Some embodiments include semiconductor constructions.

Abstract: Some embodiments include capacitors. The capacitors may include container-shaped storage node structures that have, along a cross-section, a pair of upwardly-extending sidewalls. Individual sidewalls may have a narrower segment over a wider segment. Capacitor dielectric material and capacitor electrode material may be along the narrower and wider segments of the sidewalls. Some embodiments include methods of forming capacitors in which an initial container-shaped storage node structure is formed to have a pair of upwardly-extending sidewalls along a cross-section, with the sidewalls being of thickness that is substantially constant or increasing from a base to a top of the initial structure. The initial structure is then converted into a modified storage node structure by reducing thicknesses of upper segments of the sidewalls while leaving thicknesses of lower segments of the sidewalls substantially unchanged.

Abstract: Some embodiments include methods of forming conductive structures. An electrically conductive material may be deposited with a first deposition method. The first deposition method has a first deposition rate and forms a first portion of a conductive structure. A second portion of the conductive structure may be formed by depositing the electrically conductive material with a second deposition method having a second deposition rate. The second deposition rate may be different from the first deposition rate by at least about a factor of 3. In some embodiments, a region of the conductive structure is utilized as a transistor gate of a DRAM cell. Some embodiments include semiconductor constructions.

Abstract: Some embodiments include a method of forming a capacitor. An opening is formed through a silicon-containing mass to a base, and sidewalls of the opening are lined with protective material. A first capacitor electrode is formed within the opening and has sidewalls along the protective material. At least some of the silicon-containing mass is removed with an etch. The protective material protects the first capacitor electrode from being removed by the etch. A second capacitor electrode is formed along the sidewalls of the first capacitor electrode, and is spaced from the first capacitor electrode by capacitor dielectric. Some embodiments include multi-material structures having one or more of aluminum nitride, molybdenum nitride, niobium nitride, niobium oxide, silicon dioxide, tantalum nitride and tantalum oxide. Some embodiments include semiconductor constructions.

Abstract: Some embodiments include methods of forming conductive structures. An electrically conductive material may be deposited with a first deposition method. The first deposition method has a first deposition rate and forms a first portion of a conductive structure. A second portion of the conductive structure may be formed by depositing the electrically conductive material with a second deposition method having a second deposition rate. The second deposition rate may be different from the first deposition rate by at least about a factor of 3. In some embodiments, a region of the conductive structure is utilized as a transistor gate of a DRAM cell. Some embodiments include semiconductor constructions.

Abstract: Some embodiments include methods of forming conductive structures. An electrically conductive material may be deposited with a first deposition method. The first deposition method has a first deposition rate and forms a first portion of a conductive structure. A second portion of the conductive structure may be formed by depositing the electrically conductive material with a second deposition method having a second deposition rate. The second deposition rate may be different from the first deposition rate by at least about a factor of 3. In some embodiments, a region of the conductive structure is utilized as a transistor gate of a DRAM cell. Some embodiments include semiconductor constructions.

Abstract: Some embodiments include capacitors. The capacitors may include container-shaped storage node structures that have, along a cross-section, a pair of upwardly-extending sidewalls. Individual sidewalls may have a narrower segment over a wider segment. Capacitor dielectric material and capacitor electrode material may be along the narrower and wider segments of the sidewalls. Some embodiments include methods of forming capacitors in which an initial container-shaped storage node structure is formed to have a pair of upwardly-extending sidewalls along a cross-section, with the sidewalls being of thickness that is substantially constant or increasing from a base to a top of the initial structure. The initial structure is then converted into a modified storage node structure by reducing thicknesses of upper segments of the sidewalls while leaving thicknesses of lower segments of the sidewalls substantially unchanged.

Abstract: Some embodiments include capacitors. The capacitors may include container-shaped storage node structures that have, along a cross-section, a pair of upwardly-extending sidewalls. Individual sidewalls may have a narrower segment over a wider segment. Capacitor dielectric material and capacitor electrode material may be along the narrower and wider segments of the sidewalls. Some embodiments include methods of forming capacitors in which an initial container-shaped storage node structure is formed to have a pair of upwardly-extending sidewalls along a cross-section, with the sidewalls being of thickness that is substantially constant or increasing from a base to a top of the initial structure. The initial structure is then converted into a modified storage node structure by reducing thicknesses of upper segments of the sidewalls while leaving thicknesses of lower segments of the sidewalls substantially unchanged.

Abstract: Some embodiments include capacitors. The capacitors may include container-shaped storage node structures that have, along a cross-section, a pair of upwardly-extending sidewalls. Individual sidewalls may have a narrower segment over a wider segment. Capacitor dielectric material and capacitor electrode material may be along the narrower and wider segments of the sidewalls. Some embodiments include methods of forming capacitors in which an initial container-shaped storage node structure is formed to have a pair of upwardly-extending sidewalls along a cross-section, with the sidewalls being of thickness that is substantially constant or increasing from a base to a top of the initial structure. The initial structure is then converted into a modified storage node structure by reducing thicknesses of upper segments of the sidewalls while leaving thicknesses of lower segments of the sidewalls substantially unchanged.