Patents by Inventor Dubravka Bilic
Dubravka Bilic has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9926187Abstract: Methods for fabricating crack resistant Microelectromechanical (MEMS) devices are provided, as are MEMS devices produced pursuant to such methods. In one embodiment, the method includes forming a sacrificial body over a substrate, producing a multi-layer membrane structure on the substrate, and removing at least a portion of the sacrificial body to form an inner cavity within the multi-layer membrane structure. The multi-layer membrane structure is produced by first forming a base membrane layer over and around the sacrificial body such that the base membrane layer has a non-planar upper surface. A predetermined thickness of the base membrane layer is then removed to impart the base membrane layer with a planar upper surface. A cap membrane layer is formed over the planar upper surface of the base membrane layer. The cap membrane layer is composed of a material having a substantially parallel grain orientation.Type: GrantFiled: November 10, 2014Date of Patent: March 27, 2018Assignee: NXP USA, Inc.Inventors: Chad S Dawson, Dubravka Bilic, Lianjun Liu, Andrew C McNeil
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Publication number: 20170341926Abstract: Methods for fabricating crack resistant Microelectromechanical (MEMS) devices are provided, as are MEMS devices produced pursuant to such methods. In one embodiment, the method includes forming a sacrificial body over a substrate, producing a multi-layer membrane structure on the substrate, and removing at least a portion of the sacrificial body to form an inner cavity within the multi-layer membrane structure. The multi-layer membrane structure is produced by first forming a base membrane layer over and around the sacrificial body such that the base membrane layer has a non-planar upper surface. A predetermined thickness of the base membrane layer is then removed to impart the base membrane layer with a planar upper surface. A cap membrane layer is formed over the planar upper surface of the base membrane layer. The cap membrane layer is composed of a material having a substantially parallel grain orientation.Type: ApplicationFiled: November 10, 2014Publication date: November 30, 2017Inventors: Chad S Dawson, Dubravka Bilic, Lianjun Liu, Andrew C McNeil
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Patent number: 9829406Abstract: A differential capacitive output pressure sensor device includes a pressure sensor diaphragm layer comprising a pressure sensing diaphragm portion, a movable electrode on the pressure sensing diaphragm portion, a fixed electrode, and a device layer electrode. The pressure sensor device further includes a device layer including a fixed element connected to the device layer electrode and a movable element connected to the movable electrode. As the pressure changes, the pressure sensing diaphragm portion including the movable electrode and the movable element move. This changes the capacitance between the movable electrode and the fixed element inversely to the change in capacitance between the fixed electrode and the moveable element. Accordingly, a differential capacitive output is provided that has improved linearity with respect to the pressure change and increased sensitivity allowing the change in pressure to be measured readily and accurately.Type: GrantFiled: September 15, 2015Date of Patent: November 28, 2017Assignee: NXP USA, Inc.Inventors: Aaron A Geisberger, Dubravka Bilic, Chad S Dawson, Fengyuan Li
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Patent number: 9790085Abstract: A structure for preventing charge induced leakage of a semiconductor device includes a shield separated from a first interconnect by at least a first lateral spacing and separated from a second interconnect by at least a second lateral spacing. The first interconnect is connected to a first junction and the second interconnect is connected to a second junction. A shield bias is connected to the shield to terminate an electromagnetic field on the shield. The shield between the first and second lateral spacings has a minimum width to substantially prevent formation of a conductive channel between the first and second junctions. The shield may be formed over a portion of the first junction and over a portion of the second junction to substantially prevent formation of another conductive channel between the first and second junctions at a location that does not have the first and second lateral spacings.Type: GrantFiled: June 16, 2016Date of Patent: October 17, 2017Assignee: NXP USA, Inc.Inventors: Dubravka Bilic, Andrew C. McNeil, Lianjun Liu, Margaret Kniffin, Chad Dawson, Colin Stevens
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Patent number: 9791340Abstract: During a first cycle of operation, first and second bottom electrodes of a split bottom electrode are electrically connected together. A total capacitance between the split bottom electrode and a top electrode layer is measured to determine the ambient pressure. Accordingly, pressure, e.g., tire pressure, is measured during the first cycle of operation. In a second cycle of operation, the first and second bottom electrodes are electrically disconnected. A first capacitance between the first bottom electrode and top electrode layer and a second capacitance between second bottom electrode and top electrode layer are measured. The difference between the first capacitance and the second capacitance is calculated and compared to a fault indicating capacitance variation to determine if the pressure sensor device is operating normally or malfunctioning. Accordingly, a self-test of the pressure sensor device is performed during the second cycle of operation.Type: GrantFiled: July 22, 2015Date of Patent: October 17, 2017Assignee: NXP USA, Inc.Inventors: Dubravka Bilic, Chad S Dawson
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Publication number: 20170074738Abstract: A differential capacitive output pressure sensor device includes a pressure sensor diaphragm layer comprising a pressure sensing diaphragm portion, a movable electrode on the pressure sensing diaphragm portion, a fixed electrode, and a device layer electrode. The pressure sensor device further includes a device layer including a fixed element connected to the device layer electrode and a movable element connected to the movable electrode. As the pressure changes, the pressure sensing diaphragm portion including the movable electrode and the movable element move. This changes the capacitance between the movable electrode and the fixed element inversely to the change in capacitance between the fixed electrode and the moveable element. Accordingly, a differential capacitive output is provided that has improved linearity with respect to the pressure change and increased sensitivity allowing the change in pressure to be measured readily and accurately.Type: ApplicationFiled: September 15, 2015Publication date: March 16, 2017Inventors: Aaron A. GEISBERGER, Dubravka BILIC, Chad S. DAWSON, Fengyuan LI
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Publication number: 20170023427Abstract: During a first cycle of operation, first and second bottom electrodes of a split bottom electrode are electrically connected together. A total capacitance between the split bottom electrode and a top electrode layer is measured to determine the ambient pressure. Accordingly, pressure, e.g., tire pressure, is measured during the first cycle of operation. In a second cycle of operation, the first and second bottom electrodes are electrically disconnected. A first capacitance between the first bottom electrode and top electrode layer and a second capacitance between second bottom electrode and top electrode layer are measured. The difference between the first capacitance and the second capacitance is calculated and compared to a fault indicating capacitance variation to determine if the pressure sensor device is operating normally or malfunctioning. Accordingly, a self-test of the pressure sensor device is performed during the second cycle of operation.Type: ApplicationFiled: July 22, 2015Publication date: January 26, 2017Inventors: Dubravka BILIC, Chad S. DAWSON
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Patent number: 9425382Abstract: A microelectromechanical system (MEMS) sensor device includes a substrate, a support structure supported by the substrate, a membrane supported by the support structure and spaced from the substrate, and a polymer layer covering the membrane.Type: GrantFiled: November 23, 2015Date of Patent: August 23, 2016Assignee: FREESCALE SEMICONDUCTOR, INC.Inventors: Dubravka Bilic, Stephen R. Hooper
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Publication number: 20160075553Abstract: A microelectromechanical system (MEMS) sensor device includes a substrate, a support structure supported by the substrate, a membrane supported by the support structure and spaced from the substrate, and a polymer layer covering the membrane.Type: ApplicationFiled: November 23, 2015Publication date: March 17, 2016Applicant: Freescale Semiconductor, Inc.Inventors: Dubravka Bilic, Stephen R. Hooper
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Patent number: 9199840Abstract: A method of fabricating a sensor device includes forming a plurality of sensor structures on a wafer, covering the plurality of sensor structures with a polymer layer, and dicing the wafer into a plurality of die while each sensor structure remains covered by the polymer layer.Type: GrantFiled: November 1, 2013Date of Patent: December 1, 2015Assignee: Freescale Semiconductor, Inc.Inventors: Dubravka Bilic, Stephen R. Hooper
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Patent number: 9103705Abstract: A combination sensor and corresponding method of measuring a plurality of environmental parameters uses a pressure sensor disposed on an integrated circuit die; a humidity sensor disposed on the integrated circuit die; and a circuit coupled to and shared by the pressure sensor and the humidity sensor to facilitate pressure and humidity sensing.Type: GrantFiled: February 27, 2012Date of Patent: August 11, 2015Assignee: Freescale Semiconductor, Inc.Inventors: Dubravka Bilic, Andrew C. McNeil
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Publication number: 20150123222Abstract: A method of fabricating a sensor device includes forming a plurality of sensor structures on a wafer, covering the plurality of sensor structures with a polymer layer, and dicing the wafer into a plurality of die while each sensor structure remains covered by the polymer layer.Type: ApplicationFiled: November 1, 2013Publication date: May 7, 2015Applicant: FREESCALE SEMICONDUCTOR, INC.Inventors: Dubravka Bilic, Stephen R. Hooper
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Publication number: 20150059484Abstract: Methods for fabricating crack resistant Microelectromechanical (MEMS) devices are provided, as are MEMS devices produced pursuant to such methods. In one embodiment, the method includes forming a sacrificial body over a substrate, producing a multi-layer membrane structure on the substrate, and removing at least a portion of the sacrificial body to form an inner cavity within the multi-layer membrane structure. The multi-layer membrane structure is produced by first forming a base membrane layer over and around the sacrificial body such that the base membrane layer has a non-planar upper surface. A predetermined thickness of the base membrane layer is then removed to impart the base membrane layer with a planar upper surface. A cap membrane layer is formed over the planar upper surface of the base membrane layer. The cap membrane layer is composed of a material having a substantially parallel grain orientation.Type: ApplicationFiled: November 10, 2014Publication date: March 5, 2015Inventors: Chad S Dawson, Dubravka Bilic, Lianjun Liu, Andrew C McNeil
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Patent number: 8921952Abstract: Methods for fabricating crack resistant Microelectromechanical (MEMS) devices are provided, as are MEMS devices produced pursuant to such methods. In one embodiment, the method includes forming a sacrificial body over a substrate, producing a multi-layer membrane structure on the substrate, and removing at least a portion of the sacrificial body to form an inner cavity within the multi-layer membrane structure. The multi-layer membrane structure is produced by first forming a base membrane layer over and around the sacrificial body such that the base membrane layer has a non-planar upper surface. A predetermined thickness of the base membrane layer is then removed to impart the base membrane layer with a planar upper surface. A cap membrane layer is formed over the planar upper surface of the base membrane layer. The cap membrane layer is composed of a material having a substantially parallel grain orientation.Type: GrantFiled: January 29, 2013Date of Patent: December 30, 2014Assignee: Freescale Semiconductor Inc.Inventors: Chad S Dawson, Dubravka Bilic, Lianjun Liu, Andrew C McNeil
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Publication number: 20140210018Abstract: Methods for fabricating crack resistant Microelectromechanical (MEMS) devices are provided, as are MEMS devices produced pursuant to such methods. In one embodiment, the method includes forming a sacrificial body over a substrate, producing a multi-layer membrane structure on the substrate, and removing at least a portion of the sacrificial body to form an inner cavity within the multi-layer membrane structure. The multi-layer membrane structure is produced by first forming a base membrane layer over and around the sacrificial body such that the base membrane layer has a non-planar upper surface. A predetermined thickness of the base membrane layer is then removed to impart the base membrane layer with a planar upper surface. A cap membrane layer is formed over the planar upper surface of the base membrane layer. The cap membrane layer is composed of a material having a substantially parallel grain orientation.Type: ApplicationFiled: January 29, 2013Publication date: July 31, 2014Inventors: Chad S. Dawson, Dubravka Bilic, Lianjun Liu, Andrew C. McNeil
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Publication number: 20130219994Abstract: A combination sensor and corresponding method of measuring a plurality of environmental parameters uses a pressure sensor disposed on an integrated circuit die; a humidity sensor disposed on the integrated circuit die; and a circuit coupled to and shared by the pressure sensor and the humidity sensor to facilitate pressure and humidity sensingType: ApplicationFiled: February 27, 2012Publication date: August 29, 2013Inventors: Dubravka Bilic, Andrew D. McNeil
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Patent number: 7673519Abstract: A pressure sensor includes a first set of electrodes, a second set of electrodes, and a common electrode. The first and second sets of electrodes overlie an insulative surface, wherein the first set of electrodes represent sense capacitor bottom electrodes and the second set of electrodes represent reference capacitor bottom electrodes. The second set of electrodes is configured in an interleaved arrangement with the first set of electrodes, wherein the geometry of individual electrodes of the first set of electrodes substantially matches the geometry of individual electrodes of the second set of electrodes.Type: GrantFiled: August 29, 2008Date of Patent: March 9, 2010Assignee: Freescale Semiconductor, Inc.Inventors: Marco Fuhrmann, Dubravka Bilic, Thomas D. Ohe
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Publication number: 20100050776Abstract: A pressure sensor includes a first set of electrodes, a second set of electrodes, and a common electrode. The first and second sets of electrodes overlie an insulative surface, wherein the first set of electrodes represent sense capacitor bottom electrodes and the second set of electrodes represent reference capacitor bottom electrodes. The second set of electrodes is configured in an interleaved arrangement with the first set of electrodes, wherein the geometry of individual electrodes of the first set of electrodes substantially matches the geometry of individual electrodes of the second set of electrodes.Type: ApplicationFiled: August 29, 2008Publication date: March 4, 2010Inventors: Marco Fuhrmann, Dubravka Bilic, Thomas D. Ohe
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Patent number: 7528468Abstract: A capacitor assembly (82) is formed on a substrate (20). The capacitor assembly a first conductive plate (38) and a second conductive plate (60) formed over the substrate such that the second conductive plate is separated from the first conductive plate by a distance. A conductive trace (40) is formed over the substrate that is connected to the first conductive plate and extends away from the capacitor assembly. A conductive shield (62) is formed over at least a portion of the conductive trace that is separated from the first and second conductive plates to control a fringe capacitance between the second conductive plate and the conductive trace.Type: GrantFiled: September 25, 2006Date of Patent: May 5, 2009Assignee: Freescale Semiconductor, Inc.Inventors: Andrew C. McNeil, Dubravka Bilic, Stephen R. Hooper
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Publication number: 20080073760Abstract: A capacitor assembly (82) is formed on a substrate (20). The capacitor assembly a first conductive plate (38) and a second conductive plate (60) formed over the substrate such that the second conductive plate is separated from the first conductive plate by a distance. A conductive trace (40) is formed over the substrate that is connected to the first conductive plate and extends away from the capacitor assembly. A conductive shield (62) is formed over at least a portion of the conductive trace that is separated from the first and second conductive plates to control a fringe capacitance between the second conductive plate and the conductive trace.Type: ApplicationFiled: September 25, 2006Publication date: March 27, 2008Inventors: Andrew C. McNeil, Dubravka Bilic, Stephen R. Hooper