Abstract: A light detection module has N optical channels, each with an optical filter, a detector, and an amplifier; and an N×1 switch with N input ports each connected to one corresponding output port of each channel to receive an amplified detector output corresponding to a filtered optical intensity incident on that detector. The switch cycles between channels, connecting each amplified detector output in turn to the output port. An ADC samples a time dependent optical intensity signal from the switch, generating a corresponding ADC digital signal output. A microcontroller, connected to the N×1 switch and the ADC, controls acquisition by the ADC to provide a digital voltage data stream from each channel; making the average optical intensity value characterizing the voltage data stream available from each channel at a digital output port of the microcontroller, as N data values, characterizing the light incident on the N channels of the module.

Abstract: A wideband-tunable radio frequency (RF) receiver having a tunable RF bandpass filter (RF BPF) and passive mixer-first receiver (PMF-Rx) is disclosed. The tunable RF BPF and PMF-Rx operate synergistically, exploiting the intrinsic impedance translation property of the PMF-Rx, to suppress out-of-band interferers as well as in-band interferers at the receiver front end and thereby enhance the receiver's signal-to-noise ratio and overall dynamic range. In one embodiment of the invention the tunable RF BPF and PMF-Rx are independently tunable and afford the receiver the ability to reject or suppress interferers that might not otherwise be able to be rejected or suppressed.

Abstract: A modulated RF carrier produced at the output of the polar transmitter's switch-mode power amplifier (SMPA) is conveyed to an output filter network comprising a harmonic low-pass filter (LPF) connected in parallel with an absorptive high-pass filter (HPF). Together the harmonic LPF and absorptive HPF pass the fundamental component of the modulated RF carrier to the polar transmitter's load while also absorbing higher harmonic components that would otherwise be undesirably reflected back toward the output of the SMPA.

Abstract: This application discloses apparatuses and methods for controlling a multi-longitudinal mode device seeded or wavelength locked to a spectrum-sliced external wavelength by either self-seeding or broadband light-source seeding through an array-waveguide grating.

Abstract: This application discloses apparatuses and methods for controlling a multi-longitudinal mode device seeded or wavelength locked to a spectrum-sliced external wavelength by either self-seeding or broadband light-source seeding through an array-waveguide grating.

Abstract: A connected optical waveguide structure comprises n four-port optical couplers, where n is greater than one; and n waveguide loops, each loop having a corresponding perimeter; wherein each of the n perimeters is different from each of the other n?1 perimeters. In one embodiment, for any pair of the n loops, the ratio of the larger perimeter to the smaller perimeter is greater than five halves (5/2).

Abstract: This application discloses apparatuses and methods for selecting and tuning of a select mode of a multi-longitudinal mode device seeded or wavelength locked to a spectrum-sliced external wavelength by either self-seeding or broadband light-source seeding through an array-waveguide grating.

Abstract: A fiber-optic transmitter comprises a transmitter optical port, an optical circulator, a semiconductor optical amplifier, and a two-port modulation-averaging structure. The optical circulator has at least three ports, a first one of the three circulator ports being optically coupled to the transmitter optical port. The semiconductor optical amplifier has an input optical port, an output optical port, and an electrical input port. The two-port modulation-averaging structure is optically coupled between the input optical port and a third one of the three circulator ports.

Abstract: A connected optical waveguide structure comprises n four-port optical couplers, where n is greater than one; and n waveguide loops, each loop having a corresponding perimeter; wherein each of the n perimeters is different from each of the other n?1 perimeters. In one embodiment, for any pair of the n loops, the ratio of the larger perimeter to the smaller perimeter is greater than five halves (5/2).

Abstract: This application discloses apparatuses and methods for selecting and tuning of a select mode of a multi-longitudinal mode device seeded or wavelength locked to a spectrum-sliced external wavelength by either self-seeding or broadband light-source seeding through an array-waveguide grating.

Abstract: A phase-stiff radio frequency power amplifier (RFPA) is disclosed. The high phase-stiffness property of the RFPA obviates the need for a circulator or other isolation device in applications where the RFPA is used to implement the high-power amplifier in a transmit-receive module (TRM) configured for use in a phased array. The phase-stiff RFPA is designed to operate in switch-mode, resulting in high energy efficiency. Together, the high energy efficiency and high phase-stiffness attributes of the RFPA afford the ability to construct a phased array having a SWaP (Size, Weight and Power) performance that far surpasses that which can be possibly achieved in a phased array constructed from conventional TRMs.

Abstract: A fiber-optic transmitter comprises a transmitter optical port, an optical circulator, a semiconductor optical amplifier, and a two-port modulation-averaging structure. The optical circulator has at least three ports, a first one of the three circulator ports being optically coupled to the transmitter optical port. The semiconductor optical amplifier has an input optical port, an output optical port, and an electrical input port. The two-port modulation-averaging structure is optically coupled between the input optical port and a third one of the three circulator ports.

Abstract: Methods for manufacturing semiconductor wafer structures are described which exhibit improved lifetime and reliability. The methods comprise transferring an active semiconductor layer structure from a native non-lattice-matched semiconductor growth substrate to a working substrate, wherein strain-matching layers, and optionally a portion of the active semiconductor layer structure, are removed. In certain embodiment, the process of attaching the active semiconductor layer structure to the working substrate includes annealing at an elevated temperature for a specified time.

Abstract: Methods for integrating wide-gap semiconductors with synthetic diamond substrates are disclosed. Diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited or formed on a layered structure including at least one layer of gallium nitride, aluminum nitride, silicon carbide, or zinc oxide. The resulting structure is a low stress process compatible with wide-gap semiconductor films, and may be processed into optical or high-power electronic devices. The diamond substrates serve as heat sinks or mechanical substrates.

Abstract: Methods for integrating wide-gap semiconductors, and specifically, gallium nitride epilayers with synthetic diamond substrates are disclosed. Diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited or formed on a layered structure that comprises at least one layer made out of gallium nitride. Methods for manufacturing GaN-on-diamond wafers with low bow and high crystalline quality are disclosed along with preferred choices for manufacturing GaN-on-diamond wafers and chips tailored to specific applications.

Abstract: Methods for integrating wide-gap semiconductors with synthetic diamond substrates are disclosed. Diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited or formed on a layered structure including at least one layer of gallium nitride, aluminum nitride, silicon carbide, or zinc oxide. The resulting structure is a low stress process compatible with wide-gap semiconductor films, and may be processed into optical or high-power electronic devices. The diamond substrates serve as heat sinks or mechanical substrates.

Abstract: Methods for integrating wide-gap semiconductors with synthetic diamond substrates are disclosed. Diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited or formed on a layered structure including at least one layer of gallium nitride, aluminum nitride, silicon carbide, or zinc oxide. The resulting structure is a low stress process compatible with wide-gap semiconductor films, and may be processed into optical or high-power electronic devices. The diamond substrates serve as heat sinks or mechanical substrates.

Abstract: Methods for integrating wide-gap semiconductors with synthetic diamond substrates are disclosed. Diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited or formed on a layered structure including at least one layer of gallium nitride, aluminum nitride, silicon carbide, or zinc oxide. The resulting structure is a low stress process compatible with wide-gap semiconductor films, and may be processed into optical or high-power electronic devices. The diamond substrates serve as heat sinks or mechanical substrates.

Abstract: Method for producing composite wafers with thin high-quality semiconductor films atomically attached to synthetic diamond wafers is disclosed. Synthetic diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited on bulk semiconductor wafer which has been prepared to allow separation of the thin semiconductor film from the remaining bulk semiconductor wafer. The remaining semiconductor wafer is available for reuse. The synthetic diamond substrate serves as heat spreader and a mechanical substrate.

Abstract: Methods for integrating wide-gap semiconductors with synthetic diamond substrates are disclosed. Diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited or formed on a layered structure including at least one layer of gallium nitride, aluminum nitride, silicon carbide, or zinc oxide. The resulting structure is a low stress process compatible with wide-gap semiconductor films, and may be processed into optical or high-power electronic devices. The diamond substrates serve as heat sinks or mechanical substrates.