Abstract: A system reducing the number of default ads displayed by a user agent thereby maximizing revenue for webpage publishers. To maximize revenue, the system manages multiple ad networks so that webpage publishers can have access to advertisements from the multiple ad networks. Typically, when an ad network serves a default ad, the system queries the next ad network. If the next ad network serves a non-default ad, then the ad is served. Otherwise, the system selects another ad network until either a non-default ad is served or a specific period of time elapses or a maximum number of ad networks have been queried, in which case the default ad is served. Ad networks may be ranked by revenue generation and/or the probability of serving a default ad. Inquiries to ad networks may be biased according to such rankings.

Abstract: A system reducing the number of default ads displayed by a user agent thereby maximizing revenue for webpage publishers. To maximize revenue, the system manages multiple ad networks so that webpage publishers can have access to advertisements from the multiple ad networks. Typically, when an ad network serves a default ad, the system queries the next ad network. If the next ad network serves a non-default ad, then the ad is served. Otherwise, the system selects another ad network until either a non-default ad is served or a specific period of time elapses or a maximum number of ad networks have been queried, in which case the default ad is served. Ad networks may be ranked by revenue generation and/or the probability of serving a default ad. Inquiries to ad networks may be biased according to such rankings.

Abstract: A system and method that (i) provide for features that provide assurances to content providers that their content is being viewed in a meaningful manner and (ii) encourage user adoption of dynamic lock screen content. A system and method may include selecting content to display on a mobile electronic device may include tracking, by the mobile electronic device, applications that are actively being utilized by a user of the mobile electronic device. The mobile electronic device may determine an environmental context of the user based at least in part on the applications of which the user has been utilizing. Content to display may be selected based at least in part on the determined environmental context of the user. The selected content may be displayed by the mobile device. The environmental context may be determined based on recently used apps, geographic location, information from apps (e.g., weather), and so on.

Abstract: A trenched field effect transistor is provided that includes (a) a semiconductor substrate, (b) a trench extending a predetermined depth into the semiconductor substrate, (c) a pair of doped source junctions, positioned on opposite sides of the trench, (d) a doped heavy body positioned adjacent each source junction on the opposite side of the source junction from the trench, the deepest portion of the heavy body extending less deeply into said semiconductor substrate than the predetermined depth of the trench, and (e) a doped well surrounding the heavy body beneath the heavy body.

Abstract: A system and method for determining inappropriate content within images. A plurality of training images are used to teach the machine. The training images are converted into numerical data and stored along with its human judged label in a BigMatrix. Through the BigMatrix, a RandomForest is created to discern patterns among the training images and human-judged labels. To determine whether an image contains inappropriate content, the image is converted into numerical data. The numerical data is fed to the RandomForest generated from the plurality of training images and known content. The numerical data is fed down each tree within the RandomForest. When the numerical data is routed down through the branches of the trees and terminated at a leaf node, a vote for the leaf node is obtained. The overall response of the RandomForest is given by a majority rules vote for each tree within the RandomForest.

Abstract: A trenched field effect transistor is provided that includes (a) a semiconductor substrate, (b) a trench extending a predetermined depth into the semiconductor substrate, (c) a pair of doped source junctions, positioned on opposite sides of the trench, (d) a doped heavy body positioned adjacent each source junction on the opposite side of the source junction from the trench, the deepest portion of the heavy body extending less deeply into said semiconductor substrate than the predetermined depth of the trench, and (e) a doped well surrounding the heavy body beneath the heavy body.

Abstract: A trenched field effect transistor is provided that includes (a) a semiconductor substrate, (b) a trench extending a predetermined depth into the semiconductor substrate, (c) a pair of doped source junctions, positioned on opposite sides of the trench, (d) a doped heavy body positioned adjacent each source junction on the opposite side of the source junction from the trench, the deepest portion of the heavy body extending less deeply into said semiconductor substrate than the predetermined depth of the trench, and (e) a doped well surrounding the heavy body beneath the heavy body.

Abstract: A trenched field effect transistor is provided that includes (a) a semiconductor substrate, (b) a trench extending a predetermined depth into the semiconductor substrate, (c) a pair of doped source junctions, positioned on opposite sides of the trench, (d) a doped heavy body positioned adjacent each source junction on the opposite side of the source junction from the trench, the deepest portion of the heavy body extending less deeply into said semiconductor substrate than the predetermined depth of the trench, and (e) a doped well surrounding the heavy body beneath the heavy body.

Abstract: A trenched field effect transistor is provided that includes (a) a semiconductor substrate, (b) a trench extending a predetermined depth into the semiconductor substrate, (c) a pair of doped source junctions, positioned on opposite sides of the trench, (d) a doped heavy body positioned adjacent each source junction on the opposite side of the source junction from the trench, the deepest portion of the heavy body extending less deeply into said semiconductor substrate than the predetermined depth of the trench, and (e) a doped well surrounding the heavy body beneath the heavy body.

Abstract: A trenched field effect transistor is provided that includes (a) a semiconductor substrate, (b) a trench extending a predetermined depth into the semiconductor substrate, (c) a pair of doped source junctions, positioned on opposite sides of the trench, (d) a doped heavy body positioned adjacent each source junction on the opposite side of the source junction from the trench, the deepest portion of the heavy body extending less deeply into said semiconductor substrate than the predetermined depth of the trench, and (e) a doped well surrounding the heavy body beneath the heavy body.

Abstract: A system reducing the number of default ads displayed by a user agent thereby maximizing revenue for webpage publishers. To maximize revenue, the system manages multiple ad networks so that webpage publishers can have access to advertisements from the multiple ad networks. Typically, when an ad network serves a default ad, the system queries the next ad network. If the next ad network serves a non-default ad, then the ad is served. Otherwise, the system selects another ad network until either a non-default ad is served or a specific period of time elapses or a maximum number of ad networks have been queried, in which case the default ad is served. Ad networks may be ranked by revenue generation and/or the probability of serving a default ad. Inquiries to ad networks may be biased according to such rankings.

Abstract: A trenched field effect transistor is provided that includes (a) a semiconductor substrate, (b) a trench extending a predetermined depth into the semiconductor substrate, (c) a pair of doped source junctions, positioned on opposite sides of the trench, (d) a doped heavy body positioned adjacent each source junction on the opposite side of the source junction from the trench, the deepest portion of the heavy body extending less deeply into said semiconductor substrate than the predetermined depth of the trench, and (e) a doped well surrounding the heavy body beneath the heavy body.

Abstract: A trenched field effect transistor is provided that includes (a) a semiconductor substrate, (b) a trench extending a predetermined depth into the semiconductor substrate, (c) a pair of doped source junctions, positioned on opposite sides of the trench, (d) a doped heavy body positioned adjacent each source junction on the opposite side of the source junction from the trench, the deepest portion of the heavy body extending less deeply into said semiconductor substrate than the predetermined depth of the trench, and (e) a doped well surrounding the heavy body beneath the heavy body.

Abstract: A MOSFET comprising an epitaxial layer of a semiconductor substrate of a first conductivity type, the MOSFET comprises a polysilicon gate, a source region of the first conductivity type and a body region of a second conductivity type, the polysilicon gate comprises a first layer of polysilicon and a second layer of polysilicon sandwiching a layer of polysilicon etch stop substances.

Abstract: A trenched field effect transistor is provided that includes (a) a semiconductor substrate, (b) a trench extending a predetermined depth into the semiconductor substrate, (c) a pair of doped source junctions, positioned on opposite sides of the trench, (d) a doped heavy body positioned adjacent each source junction on the opposite side of the source junction from the trench, the deepest portion of the heavy body extending less deeply into said semiconductor substrate than the predetermined depth of the trench, and (e) a doped well surrounding the heavy body beneath the heavy body.

Abstract: A trenched field effect transistor is provided that includes (a) a semiconductor substrate, (b) a trench extending a predetermined depth into the semiconductor substrate, (c) a pair of doped source junctions, positioned on opposite sides of the trench, (d) a doped heavy body positioned adjacent each source junction on the opposite side of the source junction from the trench, the deepest portion of the heavy body extending less deeply into said semiconductor substrate than the predetermined depth of the trench, and (e) a doped well surrounding the heavy body beneath the heavy body.

Abstract: Self-aligned trench MOSFETs and methods for manufacturing the same are disclosed. By having a self-aligned structure, the number of MOSFETS per unit area—the cell density—is increased, making the MOSFETs cheaper to produce. The self-aligned structure for the MOSFET is provided by making the sidewall of the overlying isolation dielectric layer substantially aligned with the sidewall of the gate conductor. Such an alignment can be made through any number of methods such as using a dual dielectric process, using a selective dielectric oxidation process, using a selective dielectric deposition process, or a spin-on-glass dielectric process.

Abstract: A trench transistor with lower leakage current and higher gate rupture voltage. The gate oxide layer of a trench transistor is grown at a temperature above about 1100° C. to reduce thinning of the oxide layer at the corners of the trench. In a further embodiment, a conformal layer of silicon nitride is deposited over the high-temperature oxide layer, and a second oxide layer is formed between the silicon nitride layer and the gate polysilicon. The first gate oxide layer, silicon nitride layer, and second oxide layer form a composite gate dielectric structure that substantially reduces leakage current in trench field effect transistors.

Abstract: A trenched field effect transistor is provided that includes (a) a semiconductor substrate, (b) a trench extending a predetermined depth into the semiconductor substrate, (c) a pair of doped source junctions, positioned on opposite sides of the trench, (d) a doped heavy body positioned adjacent each source junction on the opposite side of the source junction from the trench, the deepest portion of the heavy body extending less deeply into said semiconductor substrate than the predetermined depth of the trench, and (e) a doped well surrounding the heavy body beneath the heavy body.

Abstract: A trenched field effect transistor is provided that includes (a) a semiconductor substrate, (b) a trench extending a predetermined depth into the semiconductor substrate, (c) a pair of doped source junctions, positioned on opposite sides of the trench, (d) a doped heavy body positioned adjacent each source junction on the opposite side of the source junction from the trench, the deepest portion of the heavy body extending less deeply into said semiconductor substrate than the predetermined depth of the trench, and (e) a doped well surrounding the heavy body beneath the heavy body.