Abstract: Apparatus, system and method for detecting defects in an adhesion area that includes an adhesive mixed with a fluorescent material. One or more illumination devices may illuminate the fluorescent material in the adhesion area with a light of a predetermined wavelength. A camera may be configured to capture an image of the illuminated adhesion area. A processing device, communicatively coupled to the camera, may be configured to process the captured image by applying one or more boundary areas to the captured image and determining an image characteristic within each of the boundary areas, wherein the image characteristic is used by the processing device to determine the presence of a defect in the adhesive, such as an excess of adhesive or an insufficient application of adhesive.

Abstract: Apparatus, system and method for detecting defects in an adhesion area that includes an adhesive mixed with a fluorescent material. One or more illumination devices may illuminate the fluorescent material in the adhesion area with a light of a predetermined wavelength. A camera may be configured to capture an image of the illuminated adhesion area. A processing device, communicatively coupled to the camera, may be configured to process the captured image by applying one or more boundary areas to the captured image and determining an image characteristic within each of the boundary areas, wherein the image characteristic is used by the processing device to determine the presence of a defect in the adhesive, such as an excess of adhesive or an insufficient application of adhesive.

Abstract: Systems and methods are disclosed herein for a low cost, compact size, and thin half-etched leadframe quad-flat no-leads (QFN) package that integrates RF passive elements in the QFN leadframe for linearized PA design and RF FEMs. The integrated RF passive elements in the QFN leadframe may include RF inductors (e.g., meanders lines or spirals) for amplifier bias or RF matching, extension bar of the ground paddle for inter-stage matching or jumper pads for connection. The integrated RF passive elements may also include transmission lines for output power matching, coupled line structures such as RF couplers, RF divider or combiner realized using transmission lines with proper impedance and length, jumper pads for adjusting the bond wire length, etc. The RF parameters of the integrated passive elements are adjustable using different length and number of wire bond for fine tuning the performance of the PAM or the RF FEM.

Abstract: Apparatus, system and method for detecting defects in an adhesion area that includes an adhesive mixed with a fluorescent material. One or more illumination devices may illuminate the fluorescent material in the adhesion area with a light of a predetermined wavelength. A camera may be configured to capture an image of the illuminated adhesion area. A processing device, communicatively coupled to the camera, may be configured to process the captured image by applying one or more boundary areas to the captured image and determining an image characteristic within each of the boundary areas, wherein the image characteristic is used by the processing device to determine the presence of a defect in the adhesive, such as an excess of adhesive or an insufficient application of adhesive.

Abstract: Apparatus, system and method for detecting defects in an adhesion area that includes an adhesive mixed with a fluorescent material. One or more illumination devices may illuminate the fluorescent material in the adhesion area with a light of a predetermined wavelength. A camera may be configured to capture an image of the illuminated adhesion area. A processing device, communicatively coupled to the camera, may be configured to process the captured image by applying one or more boundary areas to the captured image and determining an image characteristic within each of the boundary areas, wherein the image characteristic is used by the processing device to determine the presence of a defect in the adhesive, such as an excess of adhesive or an insufficient application of adhesive.

Abstract: Apparatus, system and method for detecting defects in an adhesion area that includes an adhesive mixed with a fluorescent material. One or more illumination devices may illuminate the fluorescent material in the adhesion area with a light of a predetermined wavelength. A camera may be configured to capture an image of the illuminated adhesion area. A processing device, communicatively coupled to the camera, may be configured to process the captured image by applying one or more boundary areas to the captured image and determining an image characteristic within each of the boundary areas, wherein the image characteristic is used by the processing device to determine the presence of a defect in the adhesive, such as an excess of adhesive or an insufficient application of adhesive.

Abstract: Apparatus, system and method for detecting defects in an adhesion area that includes an adhesive mixed with a fluorescent material. One or more illumination devices may illuminate the fluorescent material in the adhesion area with a light of a predetermined wavelength. A camera may be configured to capture an image of the illuminated adhesion area. A processing device, communicatively coupled to the camera, may be configured to process the captured image by applying one or more boundary areas to the captured image and determining an image characteristic within each of the boundary areas, wherein the image characteristic is used by the processing device to determine the presence of a defect in the adhesive, such as an excess of adhesive or an insufficient application of adhesive.

Abstract: Systems and methods are disclosed herein for a low cost, compact size, and thin half-etched leadframe quad-flat no-leads (QFN) package that integrates RF passive elements in the QFN leadframe for linearized PA design and RF FEMs. The integrated RF passive elements in the QFN leadframe may include RF inductors (e.g., meanders lines or spirals) for amplifier bias or RF matching, extension bar of the ground paddle for inter-stage matching or jumper pads for connection. The integrated RF passive elements may also include transmission lines for output power matching, coupled line structures such as RF couplers, RF divider or combiner realized using transmission lines with proper impedance and length, jumper pads for adjusting the bond wire length, etc. The RF parameters of the integrated passive elements are adjustable using different length and number of wire bond for fine tuning the performance of the PAM or the RF FEM.

Abstract: An improved regulator circuit, temperature compensation bias circuit, and amplifier circuit are disclosed.

Abstract: An improved regulator circuit, temperature compensation bias circuit, and amplifier circuit are disclosed.

Abstract: A power amplifier subsystem that includes a first stage amplifier and a second stage amplifier. A first bias circuit is coupled to the first stage amplifier, and the first bias circuit has a variable impedance that increases with radio frequency (RF) power. A second bias circuit is coupled to the second stage amplifier, and the second bias circuit has impedance relatively fixed with respect to radio frequency (RF) power. According to an embodiment of the invention, the first bias circuit comprises a transistor having a collector current that increases as radio frequency (RF) power increases. The second bias circuit can have a relatively fixed impedance. A method of designing an amplifier subsystem, where transistor size and resistor values are selected to obtain the desired bias and linearity characteristics, or transistor size and resistor values are selected to operate within a selected range, and amplifier performance is adjusted by changing the bias control voltage.

Abstract: A power amplifier subsystem that includes a first stage amplifier and a second stage amplifier. A first bias circuit is coupled to the first stage amplifier, and the first bias circuit has a variable impedance that increases with radio frequency (RF) power. A second bias circuit is coupled to the second stage amplifier, and the second bias circuit has impedance relatively fixed with respect to radio frequency (RF) power. According to an embodiment of the invention, the first bias circuit comprises a transistor having a collector current that increases as radio frequency (RF) power increases. The second bias circuit can have a relatively fixed impedance. A method of designing an amplifier subsystem, where transistor size and resistor values are selected to obtain the desired bias and linearity characteristics, or transistor size and resistor values are selected to operate within a selected range, and amplifier performance is adjusted by changing the bias control voltage.