Abstract: The present technique relates to a method and apparatus for managing voltage buses. In a memory device, such as SRAM or DRAM, a periphery voltage bus may supply voltage to periphery circuitry and an array voltage bus may supply voltage to array circuitry. A bridge circuit may be utilized to isolate the buses from each other and couple the buses together, depending on the control signals are received by the bridge circuit. As such, the bridge circuit enhances the operation of the memory device by reducing duplicative circuits and equalizing the voltage that are applied to the buses. In addition, the bridge circuit isolates the buses from each other to protect sensitive circuitry in the array and periphery circuitry from noise on the other bus.

Abstract: Column addresses are generated by a burst controller that includes respective latches for the three low-order bits of a column address. The two higher order bits of the latched address bits and their compliments are applied to respective first multiplexers along with respective bits from a burst counter. The first multiplexers apply the latched address bits and their compliments to respective second multiplexers during a first bit of a burst access, and bits from a burst counter during the remaining bits of the burst. The second multiplexers are operable responsive to a control signal to couple either the latched address bits or their compliments to respective outputs for use as an internal address. The control signal is generated by an adder logic circuit that receives the two low-order bits of the column address.

Abstract: The present technique relates to a method and apparatus to provide a deep power down mode. In a memory device, such as DRAM or SRAM, various internal voltage buses provide power throughout the semiconductor chip. In a deep power down mode, grounding devices may be utilized to ground the internal voltage buses. With the internal voltage buses grounded, the outputs of the level shifters, which are control signals, may need to be forced into specific states. Through the use of the grounding devices and level shifters, leakage may be reduced and latch-up conditions may be reduced. As a result, the operation of the semiconductor chip may be enhanced because the problems associated with grounding the internal voltage buses may be diminished.

Abstract: The present technique relates to a method and apparatus for managing voltage buses. In a memory device, such as SRAM or DRAM, a periphery voltage bus may supply voltage to periphery circuitry and an array voltage bus may supply voltage to array circuitry. A bridge circuit may be utilized to isolate the buses from each other and couple the buses together, depending on the control signals are received by the bridge circuit. As such, the bridge circuit enhances the operation of the memory device by reducing duplicative circuits and equalizing the voltage that are applied to the buses. In addition, the bridge circuit isolates the buses from each other to protect sensitive circuitry in the array and periphery circuitry from noise on the other bus.

Abstract: Column addresses are generated by a burst controller that includes respective latches for the three low-order bits of a column address. The two higher order bits of the latched address bits and their compliments are applied to respective first multiplexers along with respective bits from a burst counter. The first multiplexers apply the latched address bits and their compliments to respective second multiplexers during a first bit of a burst access, and bits from a burst counter during the remaining bits of the burst. The second multiplexers are operable responsive to a control signal to couple either the latched address bits or their compliments to respective outputs for use as an internal address. The control signal is generated by an adder logic circuit that receives the two low-order bits of the column address.

Abstract: Column addresses are generated by a burst controller that includes respective latches for the three low-order bits of a column address. The two higher order bits of the latched address bits and their compliments are applied to respective first multiplexers along with respective bits from a burst counter. The first multiplexers apply the latched address bits and their compliments to respective second multiplexers during a first bit of a burst access, and bits from a burst counter during the remaining bits of the burst. The second multiplexers are operable responsive to a control signal to couple either the latched address bits or their compliments to respective outputs for use as an internal address. The control signal is generated by an adder logic circuit that receives the two low-order bits of the column address.

Abstract: Column addresses are generated by a burst controller that includes respective latches for the three low-order bits of a column address. The two higher order bits of the latched address bits and their complements are applied to respective first multiplexers along with respective bits from a burst counter. The first multiplexers apply the latched address bits and their complements to respective second multiplexers during a first bit of a burst access, and bits from a burst counter during the remaining bits of the burst. The second multiplexers are operable responsive to a control signal to couple either the latched address bits or their complements to respective outputs for use as an internal address. The control signal is generated by an adder logic circuit that receives the two low-order bits of the column address.

Abstract: Column addresses are generated by a burst controller that includes respective latches for the three low-order bits of a column address. The two higher order bits of the latched address bits and their compliments are applied to respective first multiplexers along with respective bits from a burst counter. The first multiplexers apply the latched address bits and their compliments to respective second multiplexers during a first bit of a burst access, and bits from a burst counter during the remaining bits of the burst. The second multiplexers are operable responsive to a control signal to couple either the latched address bits or their compliments to respective outputs for use as an internal address. The control signal is generated by an adder logic circuit that receives the two low-order bits of the column address.

Abstract: A simplified address decoding and data application circuitry is provided for a double data rate memory device in which a plurality of delay elements normally used during a write operation to synchronize the timing of address data, with respect to a clock signal, are replaced by a single delay element which applies a delayed clock signal to operate shift register stages of the memory device during a write operation.