Patents by Inventor Duck Hwan Oh
Duck Hwan Oh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20130207147Abstract: The present disclosure provides a UV light emitting diode and a method of manufacturing the same. The UV light emitting diode includes a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer sequentially formed on a substrate, an electrode formed on the second conductive type semiconductor layer, and an opening formed by removing at least portions of the first conductive type semiconductor layer, the active layer, the second conductive type semiconductor layer, the reflective structure and the transparent electrode to expose a portion of the first conductive type semiconductor layer therethrough. In the UV light emitting diode, UV light is emitted from the active layer, passes through the opening, and then travels outside.Type: ApplicationFiled: January 18, 2011Publication date: August 15, 2013Applicant: SEOUL OPTO DEVICE CO., LTD.Inventors: Ki Bum Nam, Duck Hwan OH, Won Cheol Seo
-
Publication number: 20120293045Abstract: Provided is an ultrasonic probe, which uses a composite piezo-electric element, which includes a piezo-electric wafer made of piezo-electric material and having a lattice shape, and a polymer filled between the lattices of the piezo-electric wafer. The ultrasonic probe has a high power and a wide band width simultaneously. In addition, since the ultrasonic probe further includes a heat exhaust unit for exhausting the heat generated at the ultrasonic probe to the outside, the temperature of an acoustic lens which contacts patients may be lowered.Type: ApplicationFiled: April 22, 2011Publication date: November 22, 2012Applicants: HUMANSCAN CO., LTD., GE HEALTHCARE CO., LTD.Inventors: Jeong Seok Kim, Sung Min Rhim, Ho Jung, Duck Hwan Oh
-
Patent number: 8093583Abstract: A light emitting diode (LED) having a barrier layer with a superlattice structure is disclosed. In an LED having an active region between an GaN-based N-type compound semiconductor layer and a GaN-based P-type compound semiconductor layer, the active region comprises a well layer and a barrier layer with a superlattice structure. As the barrier layer with the superlattice structure is employed, it is possible to reduce occurrence of defects caused by lattice mismatch between the well layer and the barrier layer.Type: GrantFiled: November 21, 2007Date of Patent: January 10, 2012Assignee: Seoul Opto Device Co., Ltd.Inventors: Sang Joon Lee, Duck Hwan Oh, Kyung Hae Kim, Chang Seok Han
-
Patent number: 7998761Abstract: The present invention relates to a light emitting diode with enhanced luminance and light emitting performance due to increase in efficiency of current diffusion into an ITO layer, and a method of fabricating the light emitting diode. According to the present invention, there is manufactured at least one light emitting cell including an N-type semiconductor layer, an active layer and a P-type semiconductor layer on a substrate. The method of the present invention comprises the steps of (a) forming at least one light emitting cell with an ITO layer formed on a top surface of the P-type semiconductor layer; (b) forming a contact groove for wiring connection in the ITO layer through dry etching; and (c) filling the contact groove with a contact connection portion made of a conductive material for the wiring connection.Type: GrantFiled: December 8, 2006Date of Patent: August 16, 2011Assignee: Seoul Opto Device Co., Ltd.Inventors: Dae Won Kim, Yeo Jin Yoon, Duck Hwan Oh, Jong Hwan Kim
-
Patent number: 7868337Abstract: Provided are a light emitting diode (LED) and a method for manufacturing the same. The LED includes an n-type semiconductor layer, an active layer, and a p-type semiconductor layer. The active layer includes a well layer and a barrier layer that are alternately laminated at least twice. The barrier layer has a thickness at least twice larger than a thickness of the well layer.Type: GrantFiled: June 11, 2008Date of Patent: January 11, 2011Assignee: Seoul Opto Device Co., Ltd.Inventors: Hwa Mok Kim, Duck Hwan Oh, Dae Won Kim, Dae Sung Kal
-
Patent number: 7772600Abstract: Disclosed are a light emitting device having a zener diode therein and a method of fabricating the light emitting device. The light emitting device comprises a P-type silicon substrate having a zener diode region and a light emitting diode region. A first N-type compound semiconductor layer is contacted to the zener diode region of the P-type silicon substrate to exhibit characteristics of a zener diode together with the P-type silicon substrate. Further, a second N-type compound semiconductor layer is positioned on the light emitting diode region of the P-type silicon substrate. The second N-type compound semiconductor layer is spaced apart from the first N-type compound semiconductor layer. Meanwhile, a P-type compound semiconductor layer is positioned on the second N-type compound semiconductor layer, and an active layer is interposed between the second N-type compound semiconductor layer and the P-type compound semiconductor layer.Type: GrantFiled: March 20, 2007Date of Patent: August 10, 2010Assignee: Seoul Opto Device Co., Ltd.Inventors: Duck Hwan Oh, Sang Joon Lee, Kyung Hae Kim
-
Publication number: 20100148190Abstract: The present invention relates to a light emitting diode with enhanced luminance and light emitting performance due to increase in efficiency of current diffusion into an ITO layer, and a method of fabricating the light emitting diode. According to the present invention, there is manufactured at least one light emitting cell including an N-type semiconductor layer, an active layer and a P-type semiconductor layer on a substrate. The method of the present invention comprises the steps of (a) forming at least one light emitting cell with an ITO layer formed on a top surface of the P-type semiconductor layer; (b) forming a contact groove for wiring connection in the ITO layer through dry etching; and (c) filling the contact groove with a contact connection portion made of a conductive material for the wiring connection.Type: ApplicationFiled: December 8, 2006Publication date: June 17, 2010Applicant: SEOUL OPTO DEVICE CO., LTD.Inventors: Dae Won Kim, Yeo Jin Yoon, Duck Hwan Oh, Jong Hwan Kim
-
Patent number: 7700960Abstract: The present invention relates to a light emitting diode with enhanced luminance and light emitting performance due to increase in efficiency of current diffusion into an ITO layer, and a method of fabricating the light emitting diode. According to the present invention, there is manufactured at least one light emitting cell including an N-type semiconductor layer, an active layer and a P-type semiconductor layer on a substrate. The method of the present invention comprises the steps of (a) forming at least one light emitting cell with an ITO layer formed on a top surface of the P-type semiconductor layer; (b) forming a contact groove for wiring connection in the ITO layer through dry etching; and (c) filling the contact groove with a contact connection portion made of a conductive material for the wiring connection.Type: GrantFiled: October 23, 2009Date of Patent: April 20, 2010Assignee: Seoul Opto Device Co., Ltd.Inventors: Dae Won Kim, Yeo Jin Yoon, Duck Hwan Oh, Jong Hwan Kim
-
Publication number: 20100059735Abstract: A light emitting diode (LED) having a barrier layer with a superlattice structure is disclosed. In an LED having an active region between an GaN-based N-type compound semiconductor layer and a GaN-based P-type compound semiconductor layer, the active region comprises a well layer and a barrier layer with a superlattice structure. As the barrier layer with the superlattice structure is employed, it is possible to reduce occurrence of defects caused by lattice mismatch between the well layer and the barrier layer.Type: ApplicationFiled: November 21, 2007Publication date: March 11, 2010Applicant: Seoul Opto Device Co., Ltd.Inventors: Sang Joon Lee, Duck Hwan Oh, Kyung Hae Kim, Chang Seok Han
-
Publication number: 20100032694Abstract: The present invention relates to a light emitting diode with enhanced luminance and light emitting performance due to increase in efficiency of current diffusion into an ITO layer, and a method of fabricating the light emitting diode. According to the present invention, there is manufactured at least one light emitting cell including an N-type semiconductor layer, an active layer and a P-type semiconductor layer on a substrate. The method of the present invention comprises the steps of (a) forming at least one light emitting cell with an ITO layer formed on a top surface of the P-type semiconductor layer; (b) forming a contact groove for wiring connection in the ITO layer through dry etching; and (c) filling the contact groove with a contact connection portion made of a conductive material for the wiring connection.Type: ApplicationFiled: October 23, 2009Publication date: February 11, 2010Applicant: SEOUL OPTO DEVICE CO., LTD.Inventors: Dae Won KIM, Yeo Jin YOON, Duck Hwan OH, Jong Hwan KIM
-
Publication number: 20080315244Abstract: Provided are a light emitting diode (LED) and a method for manufacturing the same. The LED includes an n-type semiconductor layer, an active layer, and a p-type semiconductor layer. The active layer includes a well layer and a barrier layer that are alternately laminated at least twice. The barrier layer has a thickness at least twice larger than a thickness of the well layer.Type: ApplicationFiled: June 11, 2008Publication date: December 25, 2008Applicant: SEOUL OPTO DEVICE CO., LTD.Inventors: Hwa Mok KIM, Duck Hwan Oh, Dae Won Kim, Dae Sung Kal
-
Publication number: 20080265272Abstract: Disclosed are a light emitting device having a zener diode therein and a method of fabricating the light emitting device. The light emitting device comprises a P-type silicon substrate having a zener diode region and a light emitting diode region. A first N-type compound semiconductor layer is contacted to the zener diode region of the P-type silicon substrate to exhibit characteristics of a zener diode together with the P-type silicon substrate. Further, a second N-type compound semiconductor layer is positioned on the light emitting diode region of the P-type silicon substrate. The second N-type compound semiconductor layer is spaced apart from the first N-type compound semiconductor layer. Meanwhile, a P-type compound semiconductor layer is positioned on the second N-type compound semiconductor layer, and an active layer is interposed between the second N-type compound semiconductor layer and the P-type compound semiconductor layer.Type: ApplicationFiled: March 20, 2007Publication date: October 30, 2008Applicant: SEOUL OPTO DEVICE CO., LTD.Inventors: Duck Hwan Oh, Sang Joon Lee, Kyung Hae Kim