Abstract: Disclosed is a method of forming a thin film using a chemical purge material, the method comprising supplying a metal precursor to the inside of a chamber oh which a substrate is placed; purging the interior of the chamber; supplying a reactant to the inside of the chamber so that the reactant reacts with the metal precursor to form the thin film; and supplying a chemical purge material to the inside of the chamber so that a portion of the reactant is removed.

Abstract: Disclosed is a method of depositing thin film, the method comprising: supplying an adduct precursor to the inside of a chamber in which a substrate including at least one gap feature is placed so that the adduct precursor is adsorbed to the substrate; purging the interior of the chamber; and supplying a reaction material to the inside of the chamber so that the reaction material reacts with the adduct precursor to form the thin film and fill the gap feature, wherein the adduct precursor is formed by mixing 1 to 5 moles of a compound and 1 to 5 moles of a metal compound.

Abstract: Disclosed is a method for manufacturing an aluminum precursor formed by mixing 1 to 3 moles of a compound represented by the following Chemical Formula 1 or following Chemical Formula 2 and 1 to 3 moles of a compound represented by the following Chemical Formula 3. wherein X is O or S, and R1 or R2 is each independently selected from an alkyl group having 1 to 8 carbon atoms, a cycloalkyl group having 3 to 6 carbon atoms, and an aryl group having 6 to 12 carbon atoms. wherein X is O or S, n is 1 to 5, and R1 to R4 are each independently selected from a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, a cycloalkyl group having 3 to 6 carbon atoms, and an aryl group having 6 to 12 carbon atoms. wherein R1, R2 and R3 are different from each other, and each independently selected from a hydrogen atom, an alkyl group having 1 to 6 carbon atoms, a dialkylamine having 1 to 6 carbon atoms, a cycloamine group having 1 to 6 carbon atoms, or a halogen atom.