Abstract: A CMOS image sensor cell includes a semiconductor active region of first conductivity type having a surface thereon and a P-N junction photodiode in the active region. A drive transistor is also provided in the semiconductor active region. The drive transistor has a gate electrode that is configured to receive charge generated in the P-N junction photodiode during an image capture operation (i.e., during capture of photons received from an image). This drive transistor has a gate electrode and a contoured channel region extending underneath the gate electrode. The contoured channel region has an effective channel length greater than a length of the gate electrode.

Abstract: A back-illuminated image sensor may include a substrate in which photodiodes are disposed; an insulating layer on a first surface of the substrate; an interconnection layer in the insulating layer; an anti-reflection layer between the substrate and the insulating layer; a plurality of color filters on a second surface of the substrate opposite to the first surface; and a microlens on the color filters. Because the anti-reflection layer may be between the substrate and an interlayer dielectric layer, the reflection rate of light that passes through the substrate and arrives at an interface between the substrate and the interlayer insulating layer may be reduced.

Abstract: Provided are an image sensor and a method of forming the image sensor. The image sensor has a base multi-layered reflection layer interposed between a photodiode and an interlayer insulating layer. The photodiode has a first surface adjacent to the interlayer insulating layer and a second surface opposite the first surface. Here, external light is incident on the second surface of the photodiode. Also, the image sensor includes a sidewall multi-layered reflection layer that encloses the photodiode.

Abstract: An image sensor includes a plurality of photoelectric conversion devices formed in a substrate and first and second color filters. The first color filter is formed over a first photoelectric conversion device and comprised of an organic material. The second color filter is formed over a second photoelectric conversion device and comprised of a plurality of inorganic layers. With such different types of color filters, spectral characteristic of the image sensor are enhanced.

Abstract: In one aspect, an image sensor is provided which includes an array of unit active pixels. Each of the unit active pixels comprises a first active area including a plurality of photoelectric conversion regions, and a second active area separated from the first active area. The first active areas are arranged in rows and columns so as to define row and column extending spacings there between, and the second active areas are located at respective intersections of the row and column extending spacings defined between the first active areas.

Abstract: An image sensor comprising an array of photoelectric conversion elements in a substrate, the photoelectric conversion elements being arranged in rows and columns extending in a first direction and a second direction respectively, a plurality of first junction isolation regions in the substrate that each isolate side portions of neighboring photoelectric conversion elements of a common row, and a plurality of second junction isolation regions in the substrate that each isolate side portions of neighboring photoelectric conversion elements of a common column, and a plurality of dielectric isolation regions in the substrate, that each isolate corner portions of neighboring photoelectric conversion elements.

Abstract: A shared-pixel-type image sensor including a shared floating diffusion region formed in a semiconductor substrate; first and second adjacent photoelectric conversion regions sharing the floating diffusion region; two transmission elements that alternately transfer electric charges accumulated in the first and second photoelectric conversion regions to the shared floating diffusion region, respectively; a drive element for outputting the electric charges of the shared floating diffusion region; a first contact formed on the floating diffusion region; a second contact formed on the drive element; and a local wire that connects the first and second contacts to electrically connect the floating diffusion region and the drive element, wherein the local wire is formed at a level lower than respective top surfaces of the first and second contacts.

Abstract: An image sensor and a method of manufacturing the same are provided. The image sensor includes a substrate having a sensor array area and a peripheral circuit area a first insulating film structure formed on the peripheral circuit area and including a plurality of first multi-layer wiring lines and a second insulating film structure formed on the sensor array area and including a plurality of second multi-layer wiring lines. The uppermost-layer wiring line of the plurality of first multi-layer wiring lines is higher than that of the uppermost-layer wiring line of the plurality of second multi-layer wiring lines. The first insulating film structure includes an isotropic etch-stop layer, and the second insulating film structure does not include the isotropic etch-stop layer.

Abstract: In one aspect, an image sensor is provided which includes an array of unit active pixels. Each of the unit active pixels comprises a first active area including a plurality of photoelectric conversion regions, and a second active area separated from the first active area. The first active areas are arranged in rows and columns so as to define row and column extending spacings there between, and the second active areas are located at respective intersections of the row and column extending spacings defined between the first active areas.

Abstract: An image sensor includes at least one photoelectric conversion area on a semiconductor substrate, a color filter over the photoelectric conversion area, and an apochromatic microlens over the color filter.

Abstract: The present invention relates to methods, compounds, and compositions for inhibiting angiogenesis. More particularly, the present invention relates to methods, compounds, and compositions for inhibiting VEGF production.

Abstract: An image sensor having a backside illumination structure can include a photo diode unit in a first wafer, where the photo diode unit includes photo diodes and transfer gate transistors coupled to respective ones of the photo diodes. A wiring line unit can be included on a second wafer that is bonded to the photo diode unit, where the wiring line unit includes wiring lines and transistors configured to process signals provided by the photo diode unit and configured to control the photo diode unit. A supporting substrate is bonded to the wiring line unit and a filter unit is located under the first wafer.

Abstract: An image sensor and a method of manufacturing the same are disclosed. An image sensor is formed by forming a photoelectric transformation element at a front surface of a semiconductor substrate in an active pixel sensor region and in an optical black region of the semiconductor substrate, subjecting a surface of the semiconductor substrate opposite the front surface to a removal process to create a back surface of the semiconductor substrate, and forming a light blocking film pattern on the back surface in the optical black region. The light blocking film pattern includes an organic material.

Abstract: A back-illuminated image sensor may include a substrate in which photodiodes are disposed; an insulating layer on a first surface of the substrate; an interconnection layer in the insulating layer; an anti-reflection layer between the substrate and the insulating layer; a plurality of color filters on a second surface of the substrate opposite to the first surface; and a microlens on the color filters. Because the anti-reflection layer may be between the substrate and an interlayer dielectric layer, the reflection rate of light that passes through the substrate and arrives at an interface between the substrate and the interlayer insulating layer may be reduced.

Abstract: Provided are an image sensor and a method of forming the image sensor. The image sensor has a base multi-layered reflection layer interposed between a photodiode and an interlayer insulating layer. The photodiode has a first surface adjacent to the interlayer insulating layer and a second surface opposite the first surface. Here, external light is incident on the second surface of the photodiode. Also, the image sensor includes a sidewall multi-layered reflection layer that encloses the photodiode.

Abstract: Provided are semiconductor devices having a system-on-chip (SOC) configuration that combines both a capacitor-based cell-array memory region and one or more MOS core/peripheral circuit/logic regions on a single chip and a method for manufacturing such devices. The manufacturing process reduces the number of additional photolithographic processes required and modifies the relationship between the sizing of various layers and/or structures to reduce the fabrication cost and improve the reliability of the resulting devices. In particular, the capacitors for the memory region are formed in the same insulating layer as the first metal pattern for the core/peripheral circuit/logic regions of the devices, thereby producing capacitors and metal patterns of substantially the same height and thickness respectively. A landing structure may also be formed in the cell array region in combination with the first metal pattern for improving the contact process in the cell array region.

Abstract: An image sensor may include a semiconductor substrate having unit pixel regions on the semiconductor substrate; photoelectric converters formed in the unit pixel regions; interlayer insulating films covering the photoelectric converters and having opening portions formed above the photoelectric converters; a light-transmissive portion filling the opening portions; color filters formed on the light-transmissive portion; and microlenses formed on the color filters. The microlenses may include a plurality of concentric circle patterns and a plurality of arc patterns arranged around the concentric circle patterns. An arc pattern around a specific concentric circle pattern may have a same center as the specific concentric circle pattern.

Abstract: An image sensor includes at least one photoelectric conversion area on a semiconductor substrate, a color filter over the photoelectric conversion area, and an apochromatic microlens over the color filter.

Abstract: An image sensor and a method of manufacturing same is disclosed. The image sensor implements a reflecting film formed on a front surface of a substrate having a back-illuminated photodetector. The reflecting film operates to reflect wavelengths of light that were not received by the photodetector back to the photodetector to increase the overall sensitivity of the image detector. The reflective film is formed by layering different thicknesses of material with different indices of refraction, resulting in a high reflectance.

Abstract: An image sensor comprises: an array of photoelectric conversion elements in a substrate, the photoelectric conversion elements being arranged in rows and columns extending in a first direction and a second direction respectively; a plurality of first junction isolation regions in the substrate that each isolate side portions of neighboring photoelectric conversion elements of a common row, and a plurality of second junction isolation regions in the substrate that each isolate side portions of neighboring photoelectric conversion elements of a common column; and a plurality of dielectric isolation regions in the substrate, that each isolate corner portions of neighboring photoelectric conversion elements.