Abstract: A flash memory device includes a plurality of memory cells each configured to store k-bit data, where k is a natural number greater than one. The device is programmed by a method including reading (i?1)-th order data from a selected memory cell connected to a selected wordline before programming i-th order data in one or more adjacent memory cells connected to an adjacent wordline, wherein i is a natural number between two and k, storing as read data the (i?1)-th order data read from the selected memory cell, and programming i-th order data in the selected memory cell based on the stored read data.

Abstract: To program a semiconductor memory device, a plurality of target threshold voltage groups are set by dividing target threshold voltages representing states of memory cells. The target threshold voltage groups are substantially simultaneously programmed by applying a plurality of program voltages to a word line. Program end times for the target threshold voltage groups are adjusted.

Abstract: A method of programming a nonvolatile memory device is provided. The method includes providing a plurality of memory cells coupled to a wordline, the plurality of memory cells grouped into a plurality of groups, each group including at least two memory cells, such that for each cell of the plurality of memory cells that has memory cells adjacent both sides, the memory cells immediately adjacent either side of the cell belong to different groups from each other. The method further includes selecting one group from the plurality of groups, and performing a program operation including applying a program pulse to the selected group while one or more non-selected groups of the plurality of groups are inhibited from being programmed.

Abstract: A flash memory device comprises a plurality of memory cells each configured to store k-bit data, where k is a natural number greater than one. The device is programmed by a method comprising reading (i?1)-th order data from a selected memory cell connected to a selected wordline before programming i-th order data in one or more adjacent memory cells connected to an adjacent wordline, wherein i is a natural number between two and k, storing as read data the (i?1)-th order data read from the selected memory cell, and programming i-th order data in the selected memory cell based on the stored read data.

Abstract: A method of programming a nonvolatile memory device is disclosed. The method includes providing a plurality of memory cells coupled to a wordline, the plurality of memory cells grouped into a plurality of groups, each group including at least two memory cells, such that for each cell of the plurality of memory cells that has memory cells adjacent both sides, the memory cells immediately adjacent either side of the cell belong to different groups from each other. The method further includes selecting one group from the plurality of groups, and performing a program operation including applying a program pulse to the selected group while one or more non-selected groups of the plurality of groups are inhibited from being programmed.

Abstract: To program a semiconductor memory device, a plurality of target threshold voltage groups are set by dividing target threshold voltages representing states of memory cells. The target threshold voltage groups are substantially simultaneously programmed by applying a plurality of program voltages to a word line. Program end times for the target threshold voltage groups are adjusted.