Patents by Inventor Duck Won AHN

Duck Won AHN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Aluminum nitride sintered body and member for semiconductor manufacturing apparatus comprising same
    Patent number: 12550689
    Abstract: An aluminum nitride sintered body contains 1 to 5% by weight of yttrium oxide (Y2O3), 10 to 100 ppm by weight of titanium (Ti), and the balance being aluminum nitride (AlN). Accordingly, a volume resistance value and thermal conductivity at a high temperature are improved, and the generation of impurities during a semiconductor manufacturing process can be suppressed.
    Type: Grant
    Filed: October 5, 2022
    Date of Patent: February 10, 2026
    Assignee: MiCo Ceramics Ltd.
    Inventors: Je Ho Chae, Hyo Sung Park, Duck Won Ahn, Tae Hee Kang
  • ALUMINUM NITRIDE SINTERED BODY AND MEMBER FOR SEMICONDUCTOR MANUFACUTING APPARATUS COMPRISING SAME
    Publication number: 20230024625
    Abstract: An aluminum nitride sintered body contains 1 to 5% by weight of yttrium oxide (Y2O3), 10 to 100 ppm by weight of titanium (Ti), and the balance being aluminum nitride (AlN). Accordingly, a volume resistance value and thermal conductivity at a high temperature are improved, and the generation of impurities during a semiconductor manufacturing process can be suppressed.
    Type: Application
    Filed: October 5, 2022
    Publication date: January 26, 2023
    Inventors: Je Ho CHAE, Hyo Sung PARK, Duck Won AHN, Tae Hee KANG
  • Aluminum nitride sintered body and member for semiconductor manufacuting apparatus comprising same
    Patent number: 11508586
    Abstract: An aluminum nitride sintered body contains 1 to 5% by weight of yttrium oxide (Y2O3), 10 to 100 ppm by weight of titanium (Ti), and the balance being aluminum nitride (AlN). Accordingly, a volume resistance value and thermal conductivity at a high temperature are improved, and the generation of impurities during a semiconductor manufacturing process can be suppressed.
    Type: Grant
    Filed: May 10, 2018
    Date of Patent: November 22, 2022
    Assignee: MiCo Ceramics Ltd.
    Inventors: Je Ho Chae, Hyo Sung Park, Duck Won Ahn, Tae Hee Kang
  • ALUMINUM NITRIDE SINTERED BODY AND MEMBER FOR SEMICONDUCTOR MANUFACUTING APPARATUS COMPRISING SAME
    Publication number: 20200303205
    Abstract: An aluminum nitride sintered body contains 1 to 5% by weight of yttrium oxide (Y2O3), 10 to 100 ppm by weight of titanium (Ti), and the balance being aluminum nitride (AlN). Accordingly, a volume resistance value and thermal conductivity at a high temperature are improved, and the generation of impurities during a semiconductor manufacturing process can be suppressed.
    Type: Application
    Filed: May 10, 2018
    Publication date: September 24, 2020
    Applicant: MiCo Ceramics Ltd.
    Inventors: Je Ho CHAE, Hyo Sung PARK, Duck Won AHN, Tae Hee KANG