Abstract: Inorganic compounds having the formula LiMP2Q6, where M is Ga, In, Bi, Sb, As, Al, or a combination thereof, and Q is S and/or Se, are provided. Methods and devices for detecting incident neutrons and alpha-particles using the compounds are also provided. For thermal neutron detection applications, the compounds can be enriched with lithium-6 isotope (6Li) to enhance their neutron detecting capabilities.

Abstract: Inorganic perovskites doped with oxygen atoms or fluorine atoms, methods for making the doped perovskites, and hard radiation detectors incorporating the doped perovskites as photoactive layers are provided. The doped perovskites utilize lead oxide, lead fluoride, or compounds that thermally decompose into lead oxide or lead fluoride as dopant atom sources. During the crystallization of a perovskite in the presence of the dopant atom sources, oxygen or fluoride atoms from the dopant source are incorporated into the perovskite crystal lattice.

Abstract: Inorganic compounds having the formula LiMP2Q6, where M is Ga, In, Bi, Sb, As, Al, or a combination thereof, and Q is S and/or Se, are provided. Methods and devices for detecting incident neutrons and alpha-particles using the compounds are also provided. For thermal neutron detection applications, the compounds can be enriched with lithium-6 isotope (6Li) to enhance their neutron detecting capabilities.

Abstract: Inorganic compounds having the formula LiMP2Q6, where M is Ga, In, Bi, Sb, As, Al, or a combination thereof, and Q is S and/or Se, ar provided. Methods and devices for detecting incident neutrons and alpha-particles using the compounds are also provided. For thermal neutron detection applications, the compounds can be enriched with lithium-6 isotope (Li) to enhance their neutron detecting capabilities.

Abstract: The invention relates to a thermoelectrically active p- or n-conductive semiconductor material constituted by a compound of the general formula (I) (PbTe)1?x(Sn2±ySb2±zTe5)x??(I) with 0.0001?x?0.5, 0?y<2 and 0?z<2, wherein 0 to 10% by weight of the compound may be replaced by other metals or metal compounds, wherein the semiconductor material has a Seebeck coefficient of at least |S|?60 ?V/K at a temperature of 25° C. and electrical conductivity of at least 150 S/cm and power factor of at least 5 ?W/(cm·K2), further relates to a process for the preparation of such semiconductor materials, as well as to generators and Peltier arrangements containing them.

Abstract: A thermoelectrically active p- or n-conductive semiconductor material is constituted by a ternary compound of the general formula (I) (Pb1-xGex)Te??(I) with x value from 0.16 to 0.5, wherein 0 to 10% by weight of the ternary compound may be replaced by other metals or metal compounds, wherein the semiconductor material has a Seebeck coefficient of at least ±200 ?V/K at a temperature of 25° C.

Abstract: The invention relates to a thermoelectrically active p- or n-conductive semiconductor material constituted by a compound of the general formula (I) (PbTe)1-x(Sn2±ySb2±zTe5)x ??(I) with 0.0001?x?0.5, 0?y<2 and 0?z<2, wherein 0 to 10% by weight of the compound may be replaced by other metals or metal compounds, wherein the semiconductor material has a Seebeck coefficient of at least |S|?60 ?V/K at a temperature of 25° C. and electrical conductivity of at least 150 S/cm and power factor of at least 5 ?W/(cm·K2), further relates to a process for the preparation of such semiconductor materials, as well as to generators and Peltier arrangements containing them.

Abstract: A thermoelectrically active p- or n-conductive semiconductor material is constituted by a ternary compound of the general formula (I)

Abstract: A family of isostructural compounds have been prepared having the general formula AnPbmBinQ2n+m. These compounds possess a NaCl lattice type structure as well as low thermal conductivity and controlled electrical conductivity. Furthermore, the electrical properties can be controlled by varying the values for n and m. These isostructural compounds can be used for semiconductor applications such as detectors, lasers and photovoltaic cells. These compounds also have enhanced thermoelectric properties making them excellent semiconductor materials for fabrication of thermoelectric devices.

Abstract: A series of alkali metal bismuth or bismuth and antimony, antimony chalcogenides (Te or S) are described. The compounds have a unique combination electrical properties.

Abstract: A family of isostructural compounds have been prepared having the general formula AnPbmBinO2n+m. These compounds possess a NaCl lattice type structure as well as low thermal conductivity and controlled electrical conductivity. Furthermore, the electrical properties can be controlled by varying the values for n and m. These isostructural compounds can be used for semiconductor applications such as detectors, lasers and photovoltaic cells. These compounds also have enhanced thermoelectric properties making them excellent semiconductor materials for fabrication of thermoelectric devices.