Abstract: A semiconductor device includes a first semiconductor fin that is formed over a substrate and extends along a first lateral axis. The semiconductor device includes a second semiconductor fin that is also formed over the substrate and extends along the first lateral axis. At least a tip portion of the first semiconductor fin and at least a tip portion of the second semiconductor fin bend toward each other along a second lateral axis that is perpendicular to the first lateral axis.

Abstract: Embodiments disclosed herein relate generally to methods for measuring a characteristic of a substrate. In an embodiment, the method includes scanning over the substrate with a scanning probe microscope, the substrate having fins thereon, the scanning obtaining images showing respective fin top regions of the fins, the scanning probe microscope interacting with respective portions of sidewalls of the fins by a scanning probe oscillated during the scanning, selecting images obtained at a predetermined depth below the fin top regions to obtain a line edge profile of the fins, by a processor-based system, analyzing the line edge profile of the fins using power spectral density (PSD) method to obtain spatial frequency data of the line edge profile of the fins, and by the processor-based system, calculating line edge roughness of the fins based on the spatial frequency data.

Abstract: A semiconductor device includes a first semiconductor fin that is formed over a substrate and extends along a first lateral axis. The semiconductor device includes a second semiconductor fin that is also formed over the substrate and extends along the first lateral axis. At least a tip portion of the first semiconductor fin and at least a tip portion of the second semiconductor fin bend toward each other along a second lateral axis that is perpendicular to the first lateral axis.

Abstract: A semiconductor device includes a magnetic random access memory (MRAM) cell. The MRAM cell includes a first magnetic layer disposed over a substrate, a first non-magnetic material layer made of a non-magnetic material and disposed over the first magnetic layer, a second magnetic layer disposed over the first non-magnetic material layer, and a second non-magnetic material layer disposed over the second magnetic layer. The second magnetic layer includes a plurality of magnetic material pieces separated from each other.

Abstract: A semiconductor device includes a magnetic random access memory (MRAM) cell. The MRAM cell includes a first magnetic layer disposed over a substrate, a first non-magnetic material layer made of a non-magnetic material and disposed over the first magnetic layer, a second magnetic layer disposed over the first non-magnetic material layer, and a second non-magnetic material layer disposed over the second magnetic layer. The second magnetic layer includes a plurality of magnetic material pieces separated from each other.

Abstract: A semiconductor device with different configurations of gate structures and a method of fabricating the same are disclosed. The semiconductor device includes a first gate structure and a second gate structure. The first gate structure includes a first interfacial oxide (IO) layer, a first high-K (HK) dielectric layer disposed on the first interfacial oxide layer, and a first dipole layer disposed at an interface between the first IL layer and the first HK dielectric layer. The HK dielectric layer includes a rare-earth metal dopant or an alkali metal dopant. The second gate structure includes a second IL layer, a second HK dielectric layer disposed on the second IL layer, and a second dipole layer disposed at an interface between the second IL layer and the second HK dielectric layer. The second HK dielectric layer includes a transition metal dopant and the rare-earth metal dopant or the alkali metal dopant.

Abstract: Embodiments disclosed herein relate generally to methods for measuring a characteristic of a substrate. In an embodiment, the method includes scanning over the substrate with a scanning probe microscope, the substrate having fins thereon, the scanning obtaining images showing respective fin top regions of the fins, the scanning probe microscope interacting with respective portions of sidewalls of the fins by a scanning probe oscillated during the scanning, selecting images obtained at a predetermined depth below the fin top regions to obtain a line edge profile of the fins, by a processor-based system, analyzing the line edge profile of the fins using power spectral density (PSD) method to obtain spatial frequency data of the line edge profile of the fins, and by the processor-based system, calculating line edge roughness of the fins based on the spatial frequency data.

Abstract: A method of writing to a magnetic random access memory cell includes applying an alternating current signal to the magnetic random access memory cell having a first magnetic orientation, and applying a direct current pulse to the magnetic random access memory cell to change the magnetic orientation of the magnetic random access memory cell from the first magnetic orientation to a second magnetic orientation. The first magnetic orientation and the second magnetic orientation are different.

Abstract: Embodiments disclosed herein relate generally to methods for measuring a characteristic of a substrate. In an embodiment, the method includes scanning over the substrate with a scanning probe microscope, the substrate having fins thereon, the scanning obtaining images showing respective fin top regions of the fins, the scanning probe microscope interacting with respective portions of sidewalls of the fins by a scanning probe oscillated during the scanning, selecting images obtained at a predetermined depth below the fin top regions to obtain a line edge profile of the fins, by a processor-based system, analyzing the line edge profile of the fins using power spectral density (PSD) method to obtain spatial frequency data of the line edge profile of the fins, and by the processor-based system, calculating line edge roughness of the fins based on the spatial frequency data.

Abstract: A semiconductor device includes a first semiconductor fin that is formed over a substrate and extends along a first lateral axis. The semiconductor device includes a second semiconductor fin that is also formed over the substrate and extends along the first lateral axis. At least a tip portion of the first semiconductor fin and at least a tip portion of the second semiconductor fin bend toward each other along a second lateral axis that is perpendicular to the first lateral axis.

Abstract: A semiconductor device includes a magnetic random access memory (MRAM) cell. The MRAM cell includes a first magnetic layer disposed over a substrate, a first non-magnetic material layer made of a non-magnetic material and disposed over the first magnetic layer, a second magnetic layer disposed over the first non-magnetic material layer, and a second non-magnetic material layer disposed over the second magnetic layer. The second magnetic layer includes a plurality of magnetic material pieces separated from each other.

Abstract: A method of writing to a magnetic random access memory cell includes applying an alternating current signal to the magnetic random access memory cell having a first magnetic orientation, and applying a direct current pulse to the magnetic random access memory cell to change the magnetic orientation of the magnetic random access memory cell from the first magnetic orientation to a second magnetic orientation. The first magnetic orientation and the second magnetic orientation are different.

Abstract: A semiconductor device includes a magnetic random access memory (MRAM) cell. The MRAM cell includes a first magnetic layer disposed over a substrate, a first non-magnetic material layer made of a non-magnetic material and disposed over the first magnetic layer, a second magnetic layer disposed over the first non-magnetic material layer, and a second non-magnetic material layer disposed over the second magnetic layer. The second magnetic layer includes a plurality of magnetic material pieces separated from each other.

Abstract: A method of writing to a magnetic random access memory cell includes applying an alternating current signal to the magnetic random access memory cell having a first magnetic orientation, and applying a direct current pulse to the magnetic random access memory cell to change the magnetic orientation of the magnetic random access memory cell from the first magnetic orientation to a second magnetic orientation. The first magnetic orientation and the second magnetic orientation are different.

Abstract: Embodiments disclosed herein relate generally to methods for measuring a characteristic of a substrate. In an embodiment, the method includes scanning over the substrate with a scanning probe microscope, the substrate having fins thereon, the scanning obtaining images showing respective fin top regions of the fins, the scanning probe microscope interacting with respective portions of sidewalls of the fins by a scanning probe oscillated during the scanning, selecting images obtained at a predetermined depth below the fin top regions to obtain a line edge profile of the fins, by a processor-based system, analyzing the line edge profile of the fins using power spectral density (PSD) method to obtain spatial frequency data of the line edge profile of the fins, and by the processor-based system, calculating line edge roughness of the fins based on the spatial frequency data.

Abstract: Embodiments disclosed herein relate generally to methods for measuring a characteristic of a substrate. In an embodiment, the method includes scanning over the substrate with a scanning probe microscope, the substrate having fins thereon, the scanning obtaining images showing respective fin top regions of the fins, the scanning probe microscope interacting with respective portions of sidewalls of the fins by a scanning probe oscillated during the scanning, selecting images obtained at a predetermined depth below the fin top regions to obtain a line edge profile of the fins, by a processor-based system, analyzing the line edge profile of the fins using power spectral density (PSD) method to obtain spatial frequency data of the line edge profile of the fins, and by the processor-based system, calculating line edge roughness of the fins based on the spatial frequency data.

Abstract: A semiconductor device includes a magnetic random access memory (MRAM) cell. The MRAM cell includes a first magnetic layer disposed over a substrate, a first non-magnetic material layer made of a non-magnetic material and disposed over the first magnetic layer, a second magnetic layer disposed over the first non-magnetic material layer, and a second non-magnetic material layer disposed over the second magnetic layer. The second magnetic layer includes a plurality of magnetic material pieces separated from each other.

Abstract: Embodiments disclosed herein relate generally to methods for measuring a characteristic of a substrate. In an embodiment, the method includes scanning over the substrate with a scanning probe microscope, the substrate having fins thereon, the scanning obtaining images showing respective fin top regions of the fins, the scanning probe microscope interacting with respective portions of sidewalls of the fins by a scanning probe oscillated during the scanning, selecting images obtained at a predetermined depth below the fin top regions to obtain a line edge profile of the fins, by a processor-based system, analyzing the line edge profile of the fins using power spectral density (PSD) method to obtain spatial frequency data of the line edge profile of the fins, and by the processor-based system, calculating line edge roughness of the fins based on the spatial frequency data.

Abstract: A method of writing to a magnetic random access memory cell includes applying an alternating current signal to the magnetic random access memory cell having a first magnetic orientation, and applying a direct current pulse to the magnetic random access memory cell to change the magnetic orientation of the magnetic random access memory cell from the first magnetic orientation to a second magnetic orientation. The first magnetic orientation and the second magnetic orientation are different.

Abstract: A semiconductor device includes a magnetic random access memory (MRAM) cell. The MRAM cell includes a first magnetic layer disposed over a substrate, a first non-magnetic material layer made of a non-magnetic material and disposed over the first magnetic layer, a second magnetic layer disposed over the first non-magnetic material layer, and a second non-magnetic material layer disposed over the second magnetic layer. The second magnetic layer includes a plurality of magnetic material pieces separated from each other.